Method for preparing nano-structured hard coating on surface of cemented carbide substrate
A technology of cemented carbide substrate and nanostructure, which is applied in metal material coating process, coating, ion implantation plating, etc., which can solve the problems of high cost of alloy target and difficulty in accurately controlling the content of Si element in the coating, etc.
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Embodiment 1
[0022] 1. Substrate pretreatment: (1) Grinding and polishing: Carry out sufficient rough grinding and fine grinding on the cemented carbide substrate on 600-mesh and 1200-mesh diamond grinding wheel discs respectively. Min, between coarse and fine grinding, the sample should be fully ultrasonically cleaned (ultrasonic cleaning time is 2min) and dried in an oven to remove wear debris and oil; after the sample is ground, use a W2.5 Diamond polishing powder is used for polishing, and the polishing time is 10 minutes. (2) Ultrasonic cleaning: Clean the polished substrate in the following order, ultrasonic cleaning with acetone for 5 minutes → ultrasonic cleaning with absolute ethanol for 5 minutes → drying for later use. (3) Ion source cleaning: Before sputtering deposition, the Hall ion source is used to clean the substrate, and the pressure of ion cleaning is 2×10 -2 Pa, substrate temperature 300°C, argon flux 10sccm, bias voltage negative 100V, cathode current voltage 29.5A, 1...
Embodiment 2
[0029] 1. Substrate pretreatment: (1) Grinding and polishing: Same as Example 1. (2) ultrasonic cleaning: with embodiment 1. (3) Ion source cleaning: Same as in Example 1.
[0030] 2. Pre-sputtering: same as embodiment 1.
[0031] 3. Sputtering deposition: After the pre-sputtering, argon and nitrogen are introduced, the total flux is 60sccm, of which the nitrogen flow rate is 20%, the working pressure of the deposition is 0.3Pa, the DC power supply of the Zr target is 250W, Si The RF power of the target is 60W, the sputtering time is 90min, and the substrate temperature is 300°C. After the deposition is complete, the sample is taken out and stored in a desiccator, pending characterization and analysis. After the deposition is complete, the sample is taken out and stored in a desiccator, pending characterization and analysis.
[0032] image 3 It is the XRD spectrum of the coating, which shows that the prepared coating has a face-centered cubic structure. The method for m...
Embodiment 3
[0036] 1. Substrate pretreatment: (1) Grinding and polishing: Same as Example 1. (2) ultrasonic cleaning: with embodiment 1. (3) Ion source cleaning: Same as in Example 1.
[0037] 2. Pre-sputtering: same as embodiment 1.
[0038] 3. Sputtering deposition: After the pre-sputtering, argon and nitrogen are introduced, the total flux is 60sccm, of which the nitrogen flow rate is 15%, the working pressure of the deposition is 0.4Pa, the DC power of the Zr target is 250W, Si The RF power of the target is 70W, the sputtering time is 90min, and the substrate temperature is 300°C. After the deposition is complete, the sample is taken out and stored in a desiccator, pending characterization and analysis. After the deposition is complete, the sample is taken out and stored in a desiccator, pending characterization and analysis.
[0039] Figure 4 It is the XRD spectrum of the coating, indicating that the prepared coating is a coating with a face-centered cubic structure. The coati...
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