Indium tin oxide target material and sintering preparation method thereof

A technology of indium tin oxide and target material, which is applied in the field of indium tin oxide target material and its sintering preparation, which can solve problems such as danger, high requirements for sintering equipment, difficult process control, etc., and achieve low nodulation rate, safe sintering process, and sintering low cost effect

Inactive Publication Date: 2014-07-16
广西华锡集团股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Since In 2 o 3 , SnO 2 Decomposition and In 2 O, SnO and O 2 The escape of the target forms a lot of airflow channels and pores, which hinders the increase of the density of the ITO target. In order to suppress the above-mentioned decomposition and volat

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The ITO target sintering preparation method provided in this embodiment is mainly as follows:

[0040] (1) Put the pre-prepared ITO target blank into the sintering furnace;

[0041] The ITO target material of this embodiment is made by the following method. The ITO powder with a purity of at least 99.99% is ground and passed through a 300-mesh sieve to remove large particles to obtain an ITO target material powder. The specific surface value of the ITO target material powder is 7-14m 2 / g, and then the powder is formed by hydraulic pressure or slurry casting to obtain an ITO target green body. Put the ITO target blank into the sintering furnace.

[0042] (2) With a heating rate of 15-100 degrees Celsius per hour, increase the temperature in the sintering furnace until the temperature reaches a predetermined high temperature (recorded as the first high temperature), and keep the temperature at the first high temperature for 4 to 10 hours. In this embodiment The value r...

Embodiment 2

[0052] The ITO target sintering preparation method provided in this embodiment is mainly as follows:

[0053] (1) Put the pre-prepared ITO target blank into the sintering furnace;

[0054] The ITO target material of this embodiment is made by the following method. The ITO powder with a purity of 99.99% is ground and passed through a 200-mesh sieve to remove large particles to obtain the ITO target material powder. The specific surface value of the ITO target material powder is 7m 2 / g, and then the powder is formed by hydraulic pressure or slurry casting to obtain the ITO target blank, and the ITO target blank is placed in the sintering furnace.

[0055] (2) Keep the atmosphere in the sintering furnace as a normal-pressure flowing air atmosphere (for example, an open atmospheric environment), and increase the temperature in the sintering furnace at a rate of 25 degrees Celsius per hour until the temperature reaches 800 degrees Celsius. Incubate at 800°C for 4 hours. Then the...

Embodiment 3

[0062] The ITO target sintering preparation method provided in this embodiment is mainly as follows:

[0063] (1) Put the pre-prepared ITO target blank into the sintering furnace;

[0064] The ITO target material of this embodiment is made by the following method. The ITO powder with a purity of 99.99% is ground and passed through a 300-mesh sieve to remove large particles to obtain the ITO target material powder. The specific surface value of the ITO target material powder is 14m 2 / g, and then the powder is formed by hydraulic pressure or slurry casting to obtain the ITO target blank, and the ITO target blank is placed in the sintering furnace.

[0065] (2) Keep the atmosphere in the sintering furnace as a normal-pressure flowing air atmosphere, and increase the temperature in the sintering furnace at a heating rate of 15 degrees Celsius per hour until the temperature reaches 700 degrees Celsius. Incubate at 700°C for 4 hours. Then the atmosphere in the sintering furnace i...

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Abstract

The invention discloses an indium tin oxide target material sintering preparation method which comprises the following steps: putting a target biscuit into a sintering furnace, keeping the sintering furnace be in a normal air atmosphere, raising the temperature inside the sintering furnace in a speed of 15-100 DEG C per hour till the temperature achieves a first high temperature, keeping the temperature for 4-10 hours, converting the atmosphere inside the sintering furnace to be in a normal pressure pure oxygen atmosphere, and raising the temperature inside the sintering furnace in a speed of 20-100 DEG C per hour till the temperature achieves a second high temperature; oscillating the temperature inside the sintering furnace for 5-30 hours within an oscillation range between a third high temperature and the second high temperature, specifically, when the temperature achieves the second high temperature, raising the temperature inside the sintering furnace in a speed of 50-300 DEG C per hour till the temperature achieves the third high temperature, and when the temperature achieves the third high temperature, reducing the temperature inside the sintering furnace till the temperature achieves the second high temperature in a speed of 150-300 DEG C per hour; reducing the temperature to be the normal temperature in the speed of 20-200 DEG C per hour, so as to prepare the indium tin oxide target material. The technical scheme is low in application cost and high in product quality.

Description

technical field [0001] The invention relates to an indium tin oxide target material and a sintering preparation method thereof. Background technique [0002] Indium Tin Oxide (ITO for short) is a semiconductor mixture composed of indium (III group) oxide (In2O3) and tin (IV group) oxide (SnO2), and its mixing mass ratio is usually: 90% In2O3, 10%SnO2. The main characteristic of ITO is its combination of electrical conductivity and optical transparency. ITO is yellowish gray in block state, and transparent and colorless in film state. Therefore, the target is the core material of the transparent electrode of the liquid crystal panel. With the increasing market of LCD TV, flat panel display, notebook computer and mobile phone, the demand for ITO target continues to grow. [0003] Indium tin oxide thin films are usually deposited by electron beam evaporation, physical vapor deposition, or some sputtering deposition techniques. Since the transparent conductive film prepared ...

Claims

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Application Information

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IPC IPC(8): C04B35/01C04B35/453C04B35/622
Inventor 曾纪术胡明振吴伯增陈锦全陈进中熊爱臣陈良武张元松谭翠
Owner 广西华锡集团股份有限公司
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