Method for preparing punch-through type silicon carbide insulated gate bipolar transistor

A technology of bipolar transistors and general-type silicon carbide, which is applied in the field of microelectronics, can solve the problems of high energy consumption in the epitaxial process, high manufacturing costs, and high process requirements, so as to save manufacturing costs and time, reduce manufacturing difficulty, and save resources. effect with energy

Active Publication Date: 2014-07-16
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] 1. High preparation cost
For example, SiC epitaxial equipment is expensive, and the epitaxial process consumes a lot of energy, etc.
[0008] 2. The technical difficulty of growing a thicker SiC epitaxial layer is high. For example, for the growth of an epitaxial la

Method used

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  • Method for preparing punch-through type silicon carbide insulated gate bipolar transistor
  • Method for preparing punch-through type silicon carbide insulated gate bipolar transistor

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Example 1: The dislocation in the basal plane is 10 4 / cm -3 , The substrate concentration is 2×10 14 cm -3 The through-type silicon carbide insulated gate bipolar transistor is fabricated on a P-type SiC substrate with no microtube structure.

[0031] Reference figure 1 with figure 2 , The implementation steps of this embodiment are as follows:

[0032] Step 1: Substrate processing.

[0033] Cut along the back side of the P-type SiC substrate 1 and thin it to 100μm, such as figure 2 a; Polish the cut surface, then wet oxygen oxidation at 950℃ for 20 minutes, then remove the oxide layer to restore the structure and flatness of the cut surface.

[0034] Step 2: N-trap ion implantation.

[0035] (2.1) A low-pressure chemical vapor deposition method is used to deposit a layer of SiO with a thickness of 0.2 μm on the front of the P-type SiC substrate 2 , And then deposit Al with a thickness of 1 μm as a barrier layer for nitrogen ion implantation, and photoetch the N-well implant...

Embodiment 2

[0059] Example 2: The dislocation at the base plane is 10 4 / cm -3 , The substrate concentration is 6×10 14 cm -3 The through-type silicon carbide insulated gate bipolar transistor is fabricated on a P-type SiC substrate with no microtube structure.

[0060] Reference figure 1 with figure 2 , The implementation steps of this embodiment are as follows:

[0061] Step A: Same as Step 1 of Example 1.

[0062] Step B: N-well implantation.

[0063] (b1) The same as the step (2.1) of Example 1;

[0064] (b2) Perform two ion implantation on the front side of the P-type SiC substrate at 650℃, that is, first use the implantation energy of 450Kev and 5×10 12 cm -2 The implantation dose of nitrogen ion is implanted once, and the implantation energy of 250Kev, 1×10 12 cm -2 The implantation dose of the second nitrogen ion implantation to form the N well 2, such as figure 2 b.

[0065] Step C: Apply glue on the front surface of the P-type SiC substrate that has completed the above process, and etc...

Embodiment 3

[0079] Example 3: The dislocation at the base plane is 10 4 / cm -3 , The substrate concentration is 1×10 15 cm -3 The through-type silicon carbide insulated gate bipolar transistor is fabricated on a P-type SiC substrate with no microtube structure.

[0080] Reference figure 1 with figure 2 , The implementation steps of this embodiment are as follows:

[0081] Step 1: Same as Step 1 of Example 1.

[0082] Step 2: Use low pressure chemical vapor deposition to deposit a layer of SiO with a thickness of 0.2μm on the front of the P-type SiC substrate 2 , Then deposit Al with a thickness of 1μm as a barrier layer for nitrogen ion implantation, and etch the window of the N-well implantation area by coating photolithography; perform two ion implantation on the front side of the P-type SiC substrate at 650℃, that is, first use 600Kev Energy injection, 8×10 12 cm -2 Nitrogen ion implantation is performed once at the implant dose, and then an implantation energy of 350Kev, 4×10 12 cm -2 The ...

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Abstract

The invention discloses a method for preparing a punch-through type silicon carbide insulated gate bipolar transistor. The method mainly solves the problem that at present, the preparing cost of the silicon carbide insulated gate bipolar transistor is too high. The method comprises the implementing steps that (1) a P-type silicon carbide substrate with good structural performance is selected, the back surface of the substrate is cut and thinned, and a cut surface is polished and oxidized; (2) an N well region, an N+ body contact region, a JFET region and a P+ emitter region are formed on the front surface of the substrate in sequence through ion implantation; (3) ion implantation is carried out on a buffer layer and a collector electrode region on the back surface of the substrate; (4) high temperature annealing is carried out, activation is carried out, and dopants are implanted; (5) a grid oxidation layer is grown and etched on the front surface of the substrate, and a polysilicon gate is deposited on the front surface of the substrate; (6) metal deposition and photoetching are carried out on the front surface and the back surface of the substrate, and electrodes are led out. Compared with an existing method, the epitaxial growth of an over-thick withstand voltage layer is not needed, a large amount of production cost is saved, processing steps are simplified, and the method can be applied to the fields of inverters, switch power supplies and illumination circuits.

Description

Technical field [0001] The invention belongs to the field of microelectronics technology, and relates to a method for preparing semiconductor devices, in particular a punch-through SiC IGBT that uses a substrate as a withstand voltage layer, and can be widely used in frequency converters, inverters, switching power supplies, lighting circuits and motors And other fields. technical background [0002] Silicon carbide insulated gate bipolar transistors, namely SiC IGBTs, are new high-voltage resistant devices developed based on silicon carbide materials. At present, the mainstream solid-state device used in the field of power electronics is Si IGBT with a turn-off voltage of 0.6-6.5kV. After 30 years of development, Si IGBT has reached the limit of performance and device structure. With the development of new applications such as electric vehicles, photovoltaic and wind energy green energy, and smart grids, new leap in the performance of power electronic devices is required. In t...

Claims

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Application Information

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IPC IPC(8): H01L21/331H01L21/265
CPCH01L29/66068
Inventor 郭辉翟华星宋庆文张艺蒙张玉明汤晓燕
Owner XIDIAN UNIV
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