Method for improving N-typed DiMOSFET channel mobility based on N-typed nanometer thin layer
A mobility, N-type technology, applied in the field of microelectronics, can solve the problems of reduced gate oxide reliability, affected device performance, rough contact interface, etc., to reduce trap charges, increase mobility, and reduce interface roughness. Effect
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[0035] Example 1
[0036] Step 1. In N + Epitaxial growth N on silicon carbide substrate - Drift layer.
[0037] To N + The silicon carbide substrate 2 is cleaned using RCA cleaning standards, and then epitaxially grown on the surface of the substrate to a thickness of 8μm, and the nitrogen ion doping concentration is 1×10 15 cm -3 Of N - Drift layer 3, such as figure 2 In step 1, the process conditions are: the epitaxy temperature is 1570°C, the pressure is 100 mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.
[0038] Step 2. Multiple selective implantation of aluminum ions to form a P trap.
[0039] (2.1) Deposit a layer of SiO with a thickness of 0.2μm on the front surface of the silicon carbide wafer by low-pressure hot-wall chemical vapor deposition 2 Layer, and then deposit Al with a thickness of 1 μm as a barrier layer for ion implantation of the P well 4, and form the P well implantation area by photol...
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