A method for preparing high-quality silicon-based aluminum nitride template

Abstract

The invention discloses a method for preparing a high-quality silicon-based aluminum nitride template, and aims to solve the problem that poor surface quality and crystal quality of a silicon-based buffer layer affect the quality of an epitaxial aluminum nitride layer. The specific steps for preparing a high-quality silicon-based aluminum nitride template in the present invention are: 1) preparing a silicon single crystal substrate; 2) growing an initial buffer layer based on the silicon single crystal substrate; 3) reducing the initial buffer layer by ion bombardment 4) heat-treating the buffer layer after ion bombardment; 5) growing an aluminum nitride film based on the heat-treated buffer layer. The present invention has carried out a large number of tests based on the above process, and the test results show that the crystallization quality and roughness of the aluminum nitride layer have been greatly improved, and the quality of the template is high, which can be used for the preparation of large quantities of high-quality silicon-based aluminum nitride templates and downstream device applications.

Description

technical field [0001] The invention relates to the technical field of aluminum nitride thin films, in particular to a method for preparing a high-quality silicon-based aluminum nitride template. Background technique [0002] Semiconductor materials such as traditional silicon bases can no longer meet the development requirements of current electronic devices. Aluminum nitride (AlN), as a typical representative of the third-generation / fourth-generation semiconductor materials, has superior physical and chemical properties such as ultra-wide bandgap, high thermal conductivity, high breakdown field strength, high electron mobility, corrosion resistance, and radiation resistance. performance. In addition, it also has the largest piezoelectric response among III-V nitrides, potentially reaching high electromechanical coupling coefficients. The AlN film has a high acoustic wave transmission velocity (about 6000-8000m / s) in the direction perpendicular to the c-axis, and the tran...

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Problems solved by technology

[0005] At present, the preparation of high-quality AlN templates on Si substrates faces many challenges: (1) The lattice mismatch and thermal mismatch between Si and AlN are very large, which will cause a large amount of residual stress in the AlN film grown at high temperature, resulting in high-density defects and Cracks; (2) The crystallization and surface quality of the initial nucleation layer of AlN on the Si substrate are very poor, which has an extremely adverse effect on the subsequent sputtering process

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