A method for preparing high-quality zno materials

Abstract

The invention relates to a method for preparing a high-quality zinc oxide ZnO thin film material. The method comprises the following steps: by taking a sapphire plate as a substrate for growing a zinc oxide thin film material, putting the cleaned sapphire substrate on a reaction chamber substrate base of metal-organic chemical vapor phase epitaxial equipment; vacuumizing a reaction chamber to be 3*10<-3>Pa below, so as to empty air in the reaction chamber; filling nitrogen and hydrogen mixed gas so as to perform high-temperature pretreatment for 3min-8min at the temperature of 1000DEG C-1200DEG C; cooling the substrate to a temperature suitable for the growth of a ZnO buffer layer thin film, growing a ZnO buffer layer in an MOCVD (Metalorganic Chemical Vapor Deposition) equipment by using high-purity dimethyl zinc as a Zn source and tert butyl alcohol t-BuOH as an O source; by taking N2 as a diluting gas for the growth of the ZnO, adding a proper flow of H2; and by taking an LP-MOCVD technology, growing ZnO on the ZnO buffer layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for realizing high-quality ZnO material preparation in MOCVD equipment. Background technique [0002] The rise of the third-generation semiconductor materials is based on the breakthrough of P-type doping of GaN materials, and is marked by the successful development of high-efficiency blue-green light-emitting diodes (LEDs) and blue-light lasers (LDs). Today, GaN-based materials have become increasingly mature and commercialized, and are widely used in solid-state lighting and other fields. [0003] ZnO has all the superior characteristics of the third-generation semiconductor, and as another wide-bandgap direct-bandgap semiconductor, ZnO also has some superior characteristics than GaN, such as: higher melting point and exciton binding energy, higher High exciton gain, low epitaxial growth temperature, low cost, easy etching and more convenient subsequent process...

AI Technical Summary

Problems solved by technology

However, in the ZnO material, the research of Wang et al. [10] pointed out that compared with the cooperation carrier gas, H 2 As a carrier gas will increase the concentration of H defects in the film, reduce the growth rate of the film and the flatness of the surface, and at the same time lead to a decrease in the quality of the grown film crystal

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