Flexible and efficient crystalline silicon solar cell and manufacturing method thereof

A technology for solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of long and complex process, high manufacturing cost, and high technical route difficulty, achieve wide application, easy to low cost and high cost. The effect of large-scale industrialization and excellent photoelectric performance

Inactive Publication Date: 2014-07-23
NANJING UNIV
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Leading to high difficulty in technical route and lengthy and complicated process
In addition, on a thin flexible crystalline silicon substrate, the technical process of making the battery structure is incompatible with conventional non-flexible crystalline silicon cells, resulting in high manufacturing costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible and efficient crystalline silicon solar cell and manufacturing method thereof
  • Flexible and efficient crystalline silicon solar cell and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1, back all-metal battery structure:

[0019] 1) A p-type monocrystalline silicon wafer with a thickness of 200±20um and a resistivity of 1-3Ω·cm is used as the substrate.

[0020] 2) Using conventional non-flexible crystalline silicon cell technology, the substrate is textured and actinized, thermal diffusion is formed to form an n-type emission region, the edge n-type layer is removed by plasma dry etching, PSG is removed, and SiNx is passivated by PECVD deposition on the front side Anti-reflection layer, screen-printed silver electrodes on the front, and baked and sintered silver electrodes on the front.

[0021] 3) The front side is spin-coated with ~50um PMMA as a protective layer, and baked and cured.

[0022] 4) Using HF+HNO3+CH3COOH solution, the substrate is thinned to ~35um from the back, and the substrate exhibits very good flexibility.

[0023] 5) Remove the PMMA protective layer on the front.

[0024] 6) The metal aluminum layer of ~2um is therma...

Embodiment 2

[0025] Example 2, structure of passivated front and back cells (PERC):

[0026] 1) Use an n-type single crystal silicon wafer with a thickness of 200±20um and a resistivity of ~50Ω·cm as the substrate.

[0027] 2) Using conventional non-flexible crystalline silicon cell technology, the substrate is textured and actinized, thermally diffused to form a p-type emission region, and the back and edge p-type layers are removed by floating acid etching to remove BSG.

[0028] 3) The front PECVD deposits ~400nm SiNx as a protective layer.

[0029] 4) Using NaOH solution, the substrate is thinned to ~35um from the back, and the substrate exhibits very good flexibility.

[0030] 5) Remove the front SiNx protective layer.

[0031] 6) Al2O3 of ~80nm is deposited by ALD on the back side as a passivation layer on the back side.

[0032] 7) Electron beam evaporation on the front side has a grid-shaped silver electrode to form a front electrode, and then ALD-deposits ~80nm Al2O3 on the fro...

Embodiment 3

[0036] Example 3, heterojunction (HIT) crystalline silicon cell structure:

[0037] 1) A p-type monocrystalline silicon wafer with a thickness of 120±10um and a resistivity of 1-3Ω·cm is used as the substrate.

[0038] 2) Using NaOH solution, the substrate is thinned to ~35um from both sides, and the substrate exhibits very good flexibility.

[0039] 3) Deposit ~20nm heavily doped p-type a-Si:H by PECVD on the back to form the back passivation layer and the back field.

[0040] 4) A metal aluminum layer of ~1.5um is thermally evaporated on the back as the back electrode.

[0041] 5) The front PECVD first deposits ~5nm intrinsic a-Si:H, and then deposits ~10nm n-type a-Si:H to form a front passivation layer and a heterojunction.

[0042] 6) Deposit ~70nm TCO on the front side by magnetron sputtering, and electron beam evaporates a silver electrode with grid line pattern on it to form the front side electrode.

[0043] 7) Thermal annealing at lower temperature.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a flexible and efficient crystalline silicon solar cell and a manufacturing method thereof. The method comprises the steps that a suitable front face structure is manufactured on a crystalline silicon substrate at first, a protective layer is manufactured for well protecting the front face structure, the chemical etching method is adopted for thinning the substrate from the back face until flexibility exists, the protective layer is removed, and then a back face structure and a complete front face structure are manufactured; crystalline silicon is adopted as the substrate; the complete front face structure is a light trapping/emitter region/passivation antireflection layer/front face electrode; the protective layer has the excellent corrosion resistance, stability and integrity in the chemical etching system; the chemical etching method thins the substrate from the back face to the certain thickness, and the excellent flexibility exists; the back face structure is a back face field/passivation layer/back face electrode. According to the flexible and efficient crystalline silicon solar cell and the manufacturing method of the flexible and efficient crystalline silicon solar cell, the crystalline silicon is used as an absorption base region of the flexible cell, has the excellent photoelectric property, and provides the foundation for obtaining the efficient and flexible cell.

Description

technical field [0001] The invention relates to a solar cell and a manufacturing method thereof, in particular to a flexible high-efficiency crystalline silicon solar cell and a manufacturing method thereof. Background technique [0002] Flexible solar cells based on amorphous silicon have low conversion efficiency due to the constraints of material quality and their own photoelectric properties. [0003] The technical route of flexible solar cells based on crystalline silicon is to first use methods such as epitaxial growth to prepare flexible crystalline silicon substrates, and then complete the manufacture of cells on it. As a result, the technical route is difficult and the process is lengthy and complicated. In addition, on a very thin flexible crystalline silicon substrate, the technical process of making the battery structure is incompatible with conventional non-flexible crystalline silicon batteries, resulting in high manufacturing costs. Contents of the inventio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 余林蔚李成栋
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap