Light-emitting diode (LED) epitaxial layer structure and LED chip with same

A technology of epitaxial layer and structural unit, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as MQW layer damage, and achieve the effects of improving bonding efficiency, improving mobility, and increasing recombination efficiency
CN103972335AInactive Publication Date: 2014-08-06XIANGNENG HUALEI OPTOELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIANGNENG HUALEI OPTOELECTRONICS
Publication Date
2014-08-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a light-emitting diode (LED) epitaxial layer structure and an LED chip with the same. The epitaxial layer structure comprises an MQW layer, an electronic barrier layer and a P-type GaN hole injection layer, which sequentially grow, wherein the P-type GaN hole injection layer comprises a hole injection layer and also a P-type AlGaN / GaN superlattice layer growing between the electronic barrier layer and the hole injection layer. According to the LED epitaxial layer structure provided by the invention, an MQW protective layer is arranged between the electronic barrier layer and the MQW layer, and then the P-type AlGaN / GaN superlattice layer is arranged on the electronic barrier layer, so that even diffusion of the hole is facilitated by a two-dimensional carrier gas formed by the P-type AlGaN / GaN superlattice layer, and the joint efficiency between electronics and holes is improved.
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Description

technical field

[0001] The invention relates to the field of LED (Light Emitting Diode), in particular to an LED epitaxial layer structure and an LED chip with the structure. Background technique

[0002] The GaN semiconductor material with wide bandgap has good chemical stability, thermal stability and high breakdown voltage. It is the third-generation new semiconductor material after the first-generation silicon material and the second-generation gallium arsenide material. The bandgap of its ternary alloy Indium Gallium Nitride (InXGa1-XN) is continuously adjustable from 0.7eV to 3.4eV, and the emission wavelength covers the visible and near-ultraviolet regions. It is considered to be an ideal material for manufacturing high-brightness blue and green light-emitting diodes and white light-emitting diodes, and has been widely used in lighting, display screens, backlight sources, signal lights and other fields.

[0003] Such as figure 1 As shown, the traditional GaN-based L...

Claims

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