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A method for preparing low-dielectric polyimide film by electrodepositing polyamic acid

A polyimide film and polyamide film technology, which is applied in electrolytic coatings, electrophoretic plating, electrolytic organic material plating, etc., can solve the problem that the size, shape and porosity of pores are difficult to control, the mechanical properties of the film are reduced, and the cost of raw materials Advanced problems, to achieve the effect of easy adjustment of pore size, smooth and compact surface, and low dielectric constant

Active Publication Date: 2016-08-17
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are some problems in the above methods, such as high cost of raw materials, difficult to control the size, shape and porosity of pores, and the mechanical properties of the film are significantly reduced.
The supercritical carbon dioxide method is complicated and the cost of raw materials is high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] A kind of preparation method of low dielectric polyetherimide film of the present invention, comprises the following steps:

[0036] (1) Prepare the template

[0037] Disperse the microspheres into the dispersant to prepare a uniform dispersion of the microspheres. Put the clean substrate into the culture bottle, inject an appropriate amount of dispersion liquid into the bottle, put the culture bottle into the incubator, and wait for the solvent to evaporate to prepare the template for electrodeposition. The selected microspheres are silicon dioxide or polystyrene microspheres, and the particle diameter of the microspheres is 5-2000nm. The selected substrates are ITO glass, metal plates (such as copper and aluminum plates), and silicon wafers. The optional temperature range in the incubator is 30-60°C.

[0038] (2) Preparation of polyamic acid emulsion

[0039] (2.1) Dissolve polyamic acid, the precursor of polyimide, in an appropriate organic polar solvent, or add ...

Embodiment 1

[0049] 1. Preparation of template

[0050] Disperse SiO2 microspheres into a solvent to prepare a uniform dispersion of microspheres. Put the clean glass piece into the culture bottle, inject a proper amount of dispersion liquid into the bottle, put the culture bottle into the incubator, wait for the solvent to volatilize to make the template. The selected microspheres are silicon dioxide or polystyrene, and the particle size of the microspheres is 200nm. The temperature in the incubator was 30°C.

[0051] 2. Preparation of Polyamic Acid Emulsion

[0052] 2.1 Add dianhydride and diamine monomers in proportion to dimethylformamide, and heat the stirring plate at 25°C for 10 hours to obtain a polyamic acid solution. The mass fraction of polyamic acid in the film-forming solution is 15%.

[0053] 2.2 Take the polyamic acid solution prepared in step 2.1, cool down to 1°C, add an appropriate amount of triethylamine, stir with a stirrer for 1 hour, and then heat to a temperature...

Embodiment 2

[0062] 1. Preparation of template

[0063] Disperse SiO2 microspheres into a solvent to prepare a uniform dispersion of microspheres. Put the clean glass piece into the culture bottle, inject a proper amount of dispersion liquid into the bottle, put the culture bottle into the incubator, wait for the solvent to volatilize to make the template. The selected microspheres are silicon dioxide or polystyrene, and the particle diameter of the microspheres is 1000 nm. The temperature of the incubator was 60°C.

[0064] 2. Preparation of Polyamic Acid Emulsion

[0065] 2.1 Dissolve polyamic acid, the precursor of polyimide, in an appropriate amount of dimethylacetamide, and heat a stirring plate at 50° C. for 3 hours to obtain a polyamic acid solution. The mass fraction of polyamic acid in the solution is 12%.

[0066] 2.2 Take the polyamic acid solution prepared in step 2.1, cool down to 5°C, add an appropriate amount of tripropylamine, stir for 3 hours, and then heat to a temper...

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PUM

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Abstract

The invention discloses a method for preparing a low-dielectric polyimide film by electrodepositing polyamic acid. The method of the present invention mainly includes the following steps: template preparation; polyamic acid emulsion preparation; electrodeposited polyamide film; removing the template, coating the surface with polyamic acid solution and heating and curing to obtain a dense polyamide film, and gradient temperature imidization preparation Polyimide film. The whole process of the method of the present invention is safe, does not require expensive equipment, and the operation process is simple. The surface of the prepared polyimide film is flat and compact, has an ultra-low dielectric constant, and the pores are arranged in a three-dimensional order, and the pore size is controllable. With good mechanical properties, it has broad application prospects in electrical engineering, electronic information, military, aerospace and other fields.

Description

technical field [0001] The invention belongs to the technical field of organic film preparation, and in particular relates to a method for preparing a low-dielectric polyimide film by electrodepositing polyamic acid. Background technique [0002] With the rapid development of microelectronics technology, especially large-scale integrated circuit technology, the increase of device density and wiring density leads to signal transmission delay and crosstalk, which limits the improvement of device performance and puts forward higher requirements for the heat resistance of device materials. In order to reduce signal transmission delay, crosstalk and dielectric loss, and improve device performance, conductive interlayer insulating materials are required to have low dielectric constant and high heat resistance. [0003] The unique molecular structure of polyimide makes it have a series of excellent properties, such as good heat resistance, high mechanical properties and excellent e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J9/36C08J9/26C08L79/08C08G73/10C25D13/06C25D9/02
Inventor 李垚刘俊凯赵九蓬
Owner HARBIN INST OF TECH
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