A method for preparing low-dielectric polyimide film by electrodepositing polyimide

A technology of polyimide film and polyimide, applied in the direction of coating, etc., can solve the problems of disordered arrangement of internal pores, difficulty in controlling porosity, low film strength, etc., and achieve easy control of pore size and good mechanical properties Performance, the effect of reducing the heat treatment temperature of imidization

Active Publication Date: 2016-08-17
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Patent CN1760241 discloses a method for preparing low-dielectric polyimide film by sol-gel method. In this method, the sol is difficult to prepare and store for a long time, and the internal pores are disorderly arranged, and the pore size and porosity are difficult to control
Patent CN19111985 discloses an ultra-low dielectric constant polyimide film and its preparation method. The internal pores of the film produced by this method are distributed randomly, the porosity is difficult to control, and the strength of the film is low.
Patent CN1923877 discloses a method for preparing ultra-low dielectric constant polyimide film by phase inversion of polyimide precursor. The internal pores of the film produced by this method are distributed randomly, the porosity is difficult to control, and the strength of the film is relatively high. Low

Method used

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Embodiment 1

[0049] The invention provides a method for preparing low-dielectric polyimide film by electrodepositing polyimide, comprising the following steps:

[0050] 1. Preparation of template

[0051] Disperse SiO2 microspheres with a particle diameter of 200nm in a dispersant to prepare a uniform dispersion of microspheres. Put the clean ITO into the culture bottle, inject an appropriate amount of dispersion liquid into the bottle, put the culture bottle into the incubator, and wait for the solvent to evaporate to prepare the template for electrodeposition. The temperature range of the incubator is 30°C.

[0052] 2. Preparation of Polyimide Electrodeposition Solution

[0053] (2.1) Add dianhydride and diamine monomer into a flask filled with an appropriate amount of dimethylformamide at a ratio of 1:1, then add a certain amount of triethylamine and benzene, and feed an inert gas into the reaction device. Heating and stirring at ℃ for 90min. Then heat up to 150°C and stir for 5h to...

Embodiment 2

[0062] 1. Preparation of template

[0063] Disperse PS microspheres with a particle size of 1500nm in a dispersant to prepare a uniform dispersion of microspheres. Put a clean copper plate into a culture bottle, inject an appropriate amount of dispersion liquid into the bottle, put the culture bottle into an incubator, and wait for the solvent to evaporate to prepare a template for electrodeposition. The optional temperature range in the incubator is 60°C.

[0064] 2. Preparation of Polyimide Electrodeposition Solution

[0065] (2.1) Add dianhydride and diamine monomer into a flask filled with an appropriate amount of dimethyl sulfoxide at a ratio of 1.1:1, then add a certain amount of dimethyldodecylamine and ether, and pass inert gas into the reaction device , heated and stirred at 50°C for 15min. Then heat up to 200°C and stir for 1 h to react. After the reaction, the azeotrope of water and ether is removed to obtain a polyimide solution, and the mass fraction of the po...

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Abstract

The present invention disclose a method of electrococcular polyetamide to prepare a hypotonamide film.By using electrical deposition methods on the template, a polytamide film is prepared, and then the template is removed, and the pores are introduced in a polyimide film to further reduce the dielectric constant of the polytamide film.The polybrium amine solution is then applied to the surface of the porous polypelide film, and then it is heated and solidified to obtain a flat and porous low -agent polypelide film with a flat and dense surface.The size and pore rate obtained by this method are easy to regulate. The three -dimensional distribution of the pores is distributed in an orderly manner. The porous film has ultra -low dielectric constants and good mechanical properties.Can be applied in the fields of catalytic, separation, photon crystals, microelectronics, biotechnology and other fields.

Description

technical field [0001] The invention belongs to the technical field of organic film preparation, and in particular relates to a method for preparing a low-dielectric polyimide film by electrodepositing polyimide. Background technique [0002] With the development of very large-scale integrated circuits, the density of interconnection lines in the chip continues to increase, and the width and spacing of interconnection lines continue to decrease. When the feature size of the device gradually decreases, the integration level continues to increase, which will cause resistance-capacitance ( RC ) delay increases, resulting in a series of problems such as signal transmission delay, noise interference enhancement and power loss increase. This will greatly limit the high-speed performance of the device, and put forward higher requirements for the heat resistance of the device material. In order to reduce signal transmission delay, crosstalk and dielectric loss, and improve device p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J9/36C08J9/26C08L79/08
Inventor 李垚刘俊凯赵九蓬
Owner HARBIN INST OF TECH
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