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Preparation and application for electrochemical sensor based on nano-structure boron-doped diamond electrode

A diamond electrode and nanostructure technology, which is applied in the fields of material electrochemical variables, scientific instruments, instruments, etc., can solve the problems of low electrocatalytic activity of boron-doped diamond, difficult surface reconstruction, poor selectivity and sensitivity, etc. Catalytic activity and sensitivity, avoid low stability, improve sensitivity effect

Inactive Publication Date: 2014-08-27
HENAN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is that boron-doped diamond (BDD) electrode has low electrocatalytic activity, difficult surface reconstruction, poor selectivity and sensitivity, and provides a kind of electrocatalytic activity with high electrocatalytic activity and good sensitivity, which avoids surface material modification. Preparation and application of electrochemical sensors based on nanostructured boron-doped diamond electrodes with low stability and poor repeatability

Method used

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  • Preparation and application for electrochemical sensor based on nano-structure boron-doped diamond electrode
  • Preparation and application for electrochemical sensor based on nano-structure boron-doped diamond electrode
  • Preparation and application for electrochemical sensor based on nano-structure boron-doped diamond electrode

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preparation example Construction

[0024] The preparation of silica sol is to mix 1.0-4.0mL tetraethyl orthosilicate, 0.1-2.0mL deionized water and 10-60μL of hydrochloric acid solution with a mass concentration of 0.1 mol / L, and then ultrasonically disperse and become transparent shape to obtain silica sol.

[0025] Application based on nanostructured boron-doped diamond electrodes: the nanostructured boron-doped diamond electrodes are used for the detection of organophosphorus pesticides with electrochemical properties, and the detection limit is 2.0×10 -10 mol / L. The organophosphorus pesticides with electrochemical properties include parathion and methyl parathion.

[0026] The acetylcholinesterase is immobilized on a nanostructured boron-doped diamond electrode for the detection of organophosphorus pesticides, and the detection limit is 3×10 -12 mol / L. The organophosphorus pesticides include paraoxon, chlorpyrifos, dichlorvos, malathion, carbofuran, monocrotophos, and methamidophos.

[0027] Using the...

Embodiment 1

[0030] A layer of 5 nm Au nanodots was pre-deposited on the boron-doped diamond electrode as a mask, and the Ar / H 2 In the atmosphere, using bias-assisted microwave plasma etching technology at 200 ° C for 30 minutes, etching the boron-doped diamond surface into a nano-whisker structure boron-doped diamond electrode. Choose 10 -9 -10 -4 The parathion solution in the mol / L concentration range was quantitatively determined, and the detection limit of the nano-whisker structure boron-doped diamond electrode was determined to be 2.0×10 -10 mol / L.

Embodiment 2

[0032] A layer of 3 nm Au nanodots was pre-deposited on the boron-doped diamond electrode as a mask, and the Ar / H 2 In the atmosphere, use bias-assisted microwave plasma etching technology at 300°C for 50 minutes to etch, and etch boron-doped diamond electrodes on the surface of boron-doped diamond to form nanorod structures. Choose 10 -9 -10 -4 mol / L concentration range of methyl parathion solution was quantitatively determined, and the detection limit of boron-doped diamond electrode with nanorod structure was determined to be 4.0×10 -10 mol / L. .

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Abstract

The invention discloses preparation and application for an electrochemical sensor based on a nano-structure boron-doped diamond electrode, in particular relates to a preparation method for a nano-structure boron-doped diamond electrode and a method for the nano-structure boron-doped diamond electrode in rapid detection on organophosphorus pesticide residues, and aims at solving the technical problems of low electrocatalytic activity, difficult surface re-construction, and poor selectivity and sensitivity of a boron-doped diamond (BDD) electrode. The method disclosed by the invention comprises the following steps (1) pre-depositing a layer of gold nanodots on a boron-doped diamond electrode as a mask; (2) etching the morphology of a nano-structure on the boron-doped diamond surface in an Ar / H2 atmosphere; and (3) etching the boron-doped diamond surface, and cooling to obtain the nano-structure boron-doped diamond electrode. According to the preparation and the application disclosed by the invention after the technical scheme is adopted, the performance of the electrode is improved, the sensitivity of the electrode is improved, and the electrode is directly applied to detection on the organophosphorus pesticide residues with electrochemical characteristics, such as parathion and parathion-methyl.

Description

technical field [0001] The invention relates to an electrochemical sensor, in particular to a preparation method of an electrochemical sensor based on a nanostructured boron-doped diamond electrode and a method for rapid detection of organophosphorus pesticide residues. Background technique [0002] Food is food to safety first. Food safety is related to people's health, life safety and social economy, and it is one of the focal issues widely concerned by the government and all walks of life today. Among food safety issues, source pollution of primary agricultural products is relatively serious. Among them, due to the abuse or improper use of pesticides, the pollution of the environment is increasing day by day, and the situation of pesticide pollution of fruits and vegetables continues unabated. hit the consumer psychology of the general public. Therefore, strengthening the monitoring / detection technology of organophosphorus pesticide residues has important and far-reach...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/327G01N27/26
Inventor 卫敏金华丽谢岩黎
Owner HENAN UNIVERSITY OF TECHNOLOGY
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