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Organic electroluminescent device and preparation method

An electroluminescent device, electroluminescent technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems of refractive index difference, total reflection loss, low light output performance, etc.

Inactive Publication Date: 2014-08-27
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the rest will be consumed outside the device in other forms, and there is a difference in refractive index between the interfaces (such as between glass and ITO). The difference between the refractive index, the refractive index of glass is 1.5, ITO is 1.8, the light from ITO reaches the glass, and total reflection will occur), which causes the loss of total reflection, resulting in lower overall light extraction performance

Method used

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  • Organic electroluminescent device and preparation method
  • Organic electroluminescent device and preparation method
  • Organic electroluminescent device and preparation method

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preparation example Construction

[0036] Please also see figure 2 , the preparation method of the organic electroluminescent device 100 of an embodiment, it comprises the following steps:

[0037] Step S110 , preparing the oxide layer 10 by vapor deposition on the back surface of the glass substrate 20 .

[0038] The glass substrate 20 is glass with a refractive index of 1.8-2.2, and the transmittance at 400 nm is higher than 90%. The glass substrate 20 is preferably glass with a grade of N-LAF36, N-LASF31A, N-LASF41A or N-LASF44.

[0039] The oxide layer 10 is formed on the backside of the glass substrate 20 . The material of the oxide layer 10 is selected from aluminum oxide (Al 2 o 3 ), boron oxide (B 2 o 3 ) and gallium oxide (Ga 2 o 3 ) at least one of the The material of the oxide layer 10 is an amphoteric oxide material with high stability and high melting point, which is white or transparent and plays a role of scattering. The thickness of the oxide layer 10 is 10 μm˜30 μm. The oxide layer ...

Embodiment 1

[0056] The structure prepared in this example is Al 2 o 3 / Glass Substrate / PEDOT:PSS / PrO 2 :MoO 3 / TAPC / Alq 3 / Bphen / Cs 2 CO 3 / Al organic electroluminescent devices.

[0057] The glass substrate is N-LASF44. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night. Prepare an oxide layer on one side of the glass substrate, the material is Al 2 o 3 , prepared by electron beam, the thickness is 10nm; the anode layer is prepared on the other side of the glass substrate, the material is PEDOT:PSS (":" means mixing, the same below), and it is prepared by spin coating. PEDOT:PSS aqueous solution (here refers to the mass ratio of PTDOT and PSS, the same below), in the PEDOT:PSS aqueous solution, the mass fraction of PEDOT is 2.5%, the rotation speed is 4000rpm, the time is 20s, and dried at 100 degrees 20min, the thickness is 60nm, prepare a buffer layer on the surface of the anode, the material includes MoO 3 and doped in Mo...

Embodiment 2

[0062] The structure prepared in this example is B 2 o 3 / Glass Substrate / PEDOT:PSS / PrO 2 :WO 3 / TCTA / ADN / TAZ / LiF / Pt organic electroluminescent devices.

[0063] The glass substrate is N-LAF36. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night. Prepare an oxide layer on one side of the glass substrate, the material is B 2 o 3 , prepared by electron beam, with a thickness of 20nm; then prepare an anode on the other side of the glass, the material is PEDOT:PSS (":" means mixing, the same below), prepared by spin coating, and use a weight ratio of 2:1 for spin coating PEDOT:PSS aqueous solution (here refers to the mass ratio of PTDOT to PSS), in the PEDOT:PSS aqueous solution, the mass fraction of PEDOT is 1%, prepared by spin coating, the rotation speed is 2000rpm, the time is 10s, and baked at 200°C Dry for 10min, the thickness is 80nm. Then prepare a buffer layer on the surface of the anode, the material includes WO...

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Abstract

An organic electroluminescent device comprises an oxide layer, a glass substrate, an anode, a buffer layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode which are successively laminated. The material of the oxide layer is selected from at least one of aluminium oxide, boron oxide and gallium oxide. The material of the anode is a mixture of poly3,4-ethylenedioxythiophene and polyphenyl sulfonate. Materials of the buffer layer contain a main material and an auxiliary material doped in the main material. The main material is selected from at least one of molybdenum trioxide, tungsten trioxide and vanadium pentoxide. The auxiliary material is at least one selected from praseodymium dioxide, praseodymium oxide, ytterbium trioxide and samarium oxide. Mass ratio of the auxiliary material to the main material is 1: 1000-1:20. Luminous efficiency of the above organic electroluminescent device is high. The invention also provides a preparation method of the organic electroluminescent device.

Description

technical field [0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] The luminescence principle of organic electroluminescent devices is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied molecular orbital (HOMO) of organic matter. Electrons and holes meet, recombine, and form excitons in the light-emitting layer. Excitons migrate under the action of an electric field, transfer energy to the light-emitting material, and excite electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to generate photons , releasing light energy. [0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the res...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/54H01L51/56
CPCH10K71/166H10K71/12H10K50/81H10K50/854
Inventor 周明杰王平黄辉张振华
Owner OCEANS KING LIGHTING SCI&TECH CO LTD