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A method for modifying the absorption layer of copper-zinc-tin-selenium thin-film solar cells

A technology of copper-zinc-tin-selenium thin film and solar cells, which is applied in the direction of circuits, electrical components, climate sustainability, etc., can solve the problems of high equipment requirements, long time consumption, and restrictions on wide application, and achieve simple modification process and easy operation The effect of convenience and simple process

Inactive Publication Date: 2016-07-06
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the method of vulcanization modification of CZTSe absorption layer is mainly annealing (BagS, GunawanO, GokmenT, et al. Vacuum, high temperature and other preparation conditions are required, which requires high equipment, takes a long time and uses H in the preparation process. 2 S toxic gases, which limit the wide application of this method

Method used

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  • A method for modifying the absorption layer of copper-zinc-tin-selenium thin-film solar cells
  • A method for modifying the absorption layer of copper-zinc-tin-selenium thin-film solar cells

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Embodiment 1

[0021] A method for modifying the absorption layer of a copper-zinc-tin-selenium thin-film solar cell, comprising the following steps:

[0022] Step 1: Prepare a copper-zinc-tin-selenium absorbing layer on the molybdenum-coated soda-lime glass: first, place the molybdenum-coated soda-lime glass in a vacuum of 10 -5 In a vacuum environment of Pa, copper, zinc and tin with a purity of 99.999wt% are used as target materials, and argon gas with a purity of 99.999% (volume percentage) is input as a sputtering medium, at room temperature, power 50W, sputtering pressure (working Under the condition of 0.8Pa, direct current sputtering method was used to sputter copper for 30min, zinc for 17min, and tin for 15min respectively; Under pre-annealing for 4 hours; finally add 6mg of selenium powder, selenium annealing at 560°C for 2 hours, take out after annealing and rapidly cool down.

[0023] Step 2: Preparing the precursor solution: Add 0.005mol zinc chloride and 0.1mol thioacetamide t...

Embodiment 2

[0028] A method for modifying the absorption layer of a copper-zinc-tin-selenium thin-film solar cell, comprising the following steps:

[0029] Step 1: Prepare copper-zinc-tin-selenium absorption layer on molybdenum-plated soda-lime glass: first, add 0.0025mol copper chloride, 0.00125mol zinc sulfate, and 0.00125mmol stannous sulfate to 0.05L deionized water, stir to make it fully Dissolve to obtain mixed solution A, add 0.005mol selenium powder to 0.03L ethylenediamine, stir evenly to obtain mixed solution B, then mix mixed solution A and mixed solution B, stir evenly, and react at 200°C for 24h ; The solution after the reaction was centrifuged for 5min, poured out the supernatant, added 0.01L deionized water for ultrasonication, repeated the above steps for 6 times, and the rotating speed of each centrifugal was 6000 rpm to obtain the copper-zinc-tin dispersed in deionized water Selenium ink; Finally, spin-coat the above-mentioned copper-zinc-tin-selenium ink on molybdenum-p...

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Abstract

The invention provides a method for modifying the absorbing layer of a copper-zinc-tin-selenium thin-film solar cell, which belongs to the field of new energy. Specifically include: a) preparing a copper-zinc-tin-selenium absorption layer on molybdenum-plated soda-lime glass; b) adding soluble copper salts, zinc salts, tin salts and thioamide compounds in water, wherein, The concentration of soluble copper salt, zinc salt or tin salt is 0.001~0.01mol / L, and the ratio of the amount of thioamide compound to soluble copper salt, zinc salt or tin salt is 20:1; c) combining step a The obtained molybdenum-coated soda-lime glass with an absorbing layer is soaked in the above solution, and treated in a water bath at 70-90°C for 15s-1min; d) the molybdenum-plated soda-lime glass with an absorbing layer obtained after the treatment in step c The glass is rinsed with deionized water, and dried in a vacuum oven at 40-70°C for 2-5 hours. The modification method provided by the invention is easy to operate, safe, time-saving and low in cost.

Description

technical field [0001] The invention belongs to a preparation method of a thin-film solar cell in the field of new energy, and in particular relates to a method for modifying an absorbing layer of a copper-zinc-tin-selenium thin-film solar cell. Background technique [0002] With the gradual depletion of petrochemical energy sources, seeking stable and reliable alternative energy sources has become a major survival issue for all human beings in this century. Among many new energy sources, solar energy has become an Ideal future energy source. A solar cell is a device that converts the light energy of sunlight into electrical energy. In a new generation of thin-film solar cells, copper zinc tin selenium (Cu 2 ZnSnSe 4 , abbreviated as CZTSe) thin-film solar cells have the following advantages: First, the light absorption coefficient is as high as 10 4 cm -1 ; Second, the band gap width matches well with the solar spectrum; Third, the photoelectric conversion efficiency is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 张庶白玉玲向勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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