Diamond/copper composite material with high heat-conducting property and preparation method thereof

Abstract

The invention relates to a diamond / copper composite material with high heat-conducting property and a preparation method thereof and belongs to the field of metallic materials. The diamond / copper composite material is composed of copper or copper alloy, diamond particles and a transition layer, wherein volume fraction of the copper or copper alloy is 38-49%, the volume fraction of the diamond particles and the transition layer is 62-51%, and particle size range of diamond is 80-130Mu m. A preparation technological process comprises the following steps: carrying out pre-treatment on the diamond, plating by adopting a salt bath, preparing a performed blank, and preparing a composite material by carrying out non-pressure infiltration. The diamond / copper composite material has the advantages that a diamond / copper composite material with high volume fraction and high heat-conducting property can be directly moulded and prepared, the prepared composite material is high in density, uniform in tissue distribution, controllable in interface thickness and high in thermal conductivity, processing equipment is simple, operability is strong, energy consumption and cost are low, mass production can be realized, heat-conducting property is high, and the diamond / copper composite material can be applied to the field of thermal management or electronic packaging.

Description

technical field

[0001] The invention belongs to the field of metal materials and relates to a diamond / copper composite material, in particular to a diamond / copper composite material with high thermal conductivity and a preparation method thereof. Background technique

[0002] With the rapid development of electronic information technology today, the computing speed of chips is getting faster and faster, and the integration of chips in electronic devices is getting higher and higher. The highest power density of high-power integrated circuits has reached 660W / cm 2 , up to 1000 W / cm soon 2 , fast microprocessors and high-power semiconductor devices often fail to work properly due to high temperature in applications. Therefore, the development of electronic packaging materials with high thermal conductivity has become a major bottleneck restricting the development of electronic information technology. In addition, the thermal expansion coefficient of the electronic packaging m...

Examples

Embodiment 2

[0020] Embodiment 2: Preparation of diamond / copper composite material at 1400°C.

[0021] 1) Purify and degrease the surface of diamond particles with an average particle size of 105 μm;

[0022] 2) Salt-bath W plating on the diamond surface: Put the pretreated diamond powder and W powder at a mass ratio of 1:5, add an appropriate amount of alcohol and mix them uniformly on the mixer for 5 hours, place the mixed powder on the bottom of the alumina crucible and Compact, then cover the mixed powder with a layer of mixed salt of NaCl and KCl and compact it, the mass ratio of NaCl to KCl is 1:1, and finally cover the crucible and heat it in a box-type resistance furnace at 1150 ℃ for 120 minutes, with a heating rate of 5 ℃ / min, and finally dissolve the base salt and separate the modified diamond particles. The thickness of the tungsten coating and the tungsten carbide layer on the diamond surface is 3 μm.

[0023] 3) Preparation of diamond preform: add polyvinyl alcohol (PVA) bi...

Embodiment 3

[0024] Embodiment 3: After forming a 1 μm coating, a diamond / copper composite material was prepared at 1300° C.

[0025] 1) Purify and degrease the surface of diamond particles with an average particle size of 105 μm;

[0026] 2) Salt-bath W plating on the diamond surface: Put the pretreated diamond powder and W powder at a mass ratio of 1:5, add an appropriate amount of alcohol and mix them uniformly on the mixer for 5 hours, place the mixed powder on the bottom of the alumina crucible and Compact, then cover the mixed powder with a layer of mixed salt of NaCl and KCl and compact it, the mass ratio of NaCl to KCl is 1:1, and finally cover the crucible and heat it in a box-type resistance furnace at 1150 ℃ for 10 minutes, and the heating rate is 5 ℃ / min, and finally the base salt is dissolved and the modified diamond particles are separated. The thickness of the tungsten coating and the tungsten carbide layer on the diamond surface is 1 μm.

[0027] 3) Preparation of diamond...

technical field

[0001] The invention belongs to the field of metal materials and relates to a diamond / copper composite material, in particular to a diamond / copper composite material with high thermal conductivity and a preparation method thereof. Background technique

[0002] With the rapid development of electronic information technology today, the computing speed of chips is getting faster and faster, and the integration of chips in electronic devices is getting higher and higher. The highest power density of high-power integrated circuits has reached 660W / cm 2 , up to 1000 W / cm soon 2 , fast microprocessors and high-power semiconductor devices often fail to work properly due to high temperature in applications. Therefore, the development of electronic packaging materials with high thermal conductivity has become a major bottleneck restricting the development of electronic information technology. In addition, the thermal expansion coefficient of the electronic packaging m...

Examples

Embodiment 2

[0020] Embodiment 2: Preparation of diamond / copper composite material at 1400°C.

[0021] 1) Purify and degrease the surface of diamond particles with an average particle size of 105 μm;

[0022] 2) Salt-bath W plating on the diamond surface: Put the pretreated diamond powder and W powder at a mass ratio of 1:5, add an appropriate amount of alcohol and mix them uniformly on the mixer for 5 hours, place the mixed powder on the bottom of the alumina crucible and Compact, then cover the mixed powder with a layer of mixed salt of NaCl and KCl and compact it, the mass ratio of NaCl to KCl is 1:1, and finally cover the crucible and heat it in a box-type resistance furnace at 1150 ℃ for 120 minutes, with a heating rate of 5 ℃ / min, and finally dissolve the base salt and separate the modified diamond particles. The thickness of the tungsten coating and the tungsten carbide layer on the diamond surface is 3 μm.

[0023] 3) Preparation of diamond preform: add polyvinyl alcohol (PVA) bi...

Embodiment 3

[0024] Embodiment 3: After forming a 1 μm coating, a diamond / copper composite material was prepared at 1300° C.

[0025] 1) Purify and degrease the surface of diamond particles with an average particle size of 105 μm;

[0026] 2) Salt-bath W plating on the diamond surface: Put the pretreated diamond powder and W powder at a mass ratio of 1:5, add an appropriate amount of alcohol and mix them uniformly on the mixer for 5 hours, place the mixed powder on the bottom of the alumina crucible and Compact, then cover the mixed powder with a layer of mixed salt of NaCl and KCl and compact it, the mass ratio of NaCl to KCl is 1:1, and finally cover the crucible and heat it in a box-type resistance furnace at 1150 ℃ for 10 minutes, and the heating rate is 5 ℃ / min, and finally the base salt is dissolved and the modified diamond particles are separated. The thickness of the tungsten coating and the tungsten carbide layer on the diamond surface is 1 μm.

[0027] 3) Preparation of diamond...

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