Titanium oxide multilayer thin film varistor and preparation method for same

A technology of varistors and multi-layer thin films, applied in the direction of coating resistance materials, coatings, metal material coating processes, etc., can solve the difficulty of miniaturization of varistors, varistors without titanium oxide films, etc. question

Inactive Publication Date: 2014-09-17
CHINA UNIV OF GEOSCIENCES (BEIJING)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the limitations of sintered ceramic devices and tape casting methods, it is diffi

Method used

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  • Titanium oxide multilayer thin film varistor and preparation method for same
  • Titanium oxide multilayer thin film varistor and preparation method for same
  • Titanium oxide multilayer thin film varistor and preparation method for same

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preparation example Construction

[0036] The present invention also proposes a preparation method of this titanium oxide multilayer film varistor, which is characterized in that the method uses non-stoichiometric sintered TiO m As a matrix target, other metals or their oxides are doped targets. By radio frequency magnetron sputtering, under the action of carrier gas, TiO y -TiO x -TiO y (y>x) A thin film varistor with a sandwich structure as the basic unit. The method deposits titanium oxide film piezoresistors of different compositions on a conductive substrate by radio frequency reactive magnetron sputtering, comprising the following steps and contents:

[0037] (1) In the magnetron sputtering equipment, sintered TiO with non-stoichiometric ratio m (m=1.1-1.8) is used as the matrix target, and other metals or their oxides are doped targets. Fix different targets on different target positions, and fix the clean substrate on the sample stage; turn on the mechanical pump to Low vacuum, system vacuum up to 1...

Embodiment 1

[0052] Embodiment 1: TiO 1.3 The target and the clean highly doped conductive silicon substrate are fixed on the corresponding positions of the magnetron sputtering equipment, the chamber is closed, and the mechanical pump is first turned on to draw to a low vacuum of 10 -1 Pa, then turn on the molecular pump to pump to a high vacuum of 2×10 -4 Pa. Introduce high-purity argon gas, and pre-sputter for 10 minutes. Then pass through the Ar / O 2 The mixed gas ratio is 4:1, and the sputtering power is 60W, and the deposition is performed for 1 hour. Close the oxygen valve, only pass argon gas, and deposit for 1 hour under the condition of sputtering power of 60W. Inject Ar / O again 2 The mixed gas ratio is 4:1, and the sputtering power is 60W, and the deposition is performed for 1 hour. can be obtained on the substrate containing a TiO y -TiO x -TiO y Undoped multilayer films of structural units. The whole process is carried out at room temperature, and the working pressure...

Embodiment 2

[0053] Embodiment 2: TiO 1.3 The target and the clean highly doped conductive silicon substrate are fixed on the corresponding positions of the magnetron sputtering equipment, the chamber is closed, and the mechanical pump is first turned on to draw to a low vacuum of 10 -1 Pa, then turn on the molecular pump to pump to a high vacuum of 2×10 -4 Pa. Introduce high-purity argon gas, and pre-sputter for 10 minutes. Then pass through the Ar / O 2 The mixed gas ratio is 4:1, and the sputtering power is 60W, and the deposition is performed for 1 hour. Close the oxygen valve, only pass argon gas, and deposit for 1 hour under the condition of sputtering power of 60W. Inject Ar / O again 2 The mixed gas ratio is 4:1, and the sputtering power is 60W, and the deposition is performed for 1 hour. Close the oxygen valve again, only flow argon, and deposit for 1 hour under the condition of sputtering power of 60W. Then pass through the Ar / O 2 The mixed gas ratio is 4:1, and the sputterin...

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Abstract

The invention relates to a titanium oxide multilayer film varistor and a preparation method for the same, and belongs to the technical field of preparation and application of electronic information materials. Nonstoichiometric sintered TiOm is adopted as a substrate target, other metal or oxide thereof is adopted as a doped substrate, and the thin film varistor employing a TiOy-TiOx-TiOy (y is more than x) sandwich structure as a basic unit is prepared in a radio frequency magnetron sputtering way on a conductive substrate with a smooth surface under the action of carrier gas. The thin film varistor prepared by the method is strict and controllable in deposition condition and high in process repeatability, and a thin film with uniform thickness can be obtained on a large-area substrate. The varistor is high in nonlinear performance and controllable in varistor voltage, is particularly suitable for the over-voltage protection of large-scale or super-large-scale integrated circuits, and has broad application prospect in a power system, a communication system, a security system, motor protection, an automotive electronic system, a household electrical appliance and the like.

Description

technical field [0001] The invention relates to a high-performance titanium oxide multilayer film piezoresistor and a preparation method thereof, belonging to the technical field of electronic information material preparation and application thereof. Background technique [0002] Varistor refers to a semiconductor material device that has nonlinear current-voltage characteristics at a certain temperature and within a certain voltage range, and its resistance decreases sharply as the applied voltage increases. It has a wide range of applications and can be used as a valve element to suppress surges in transmission lines and an overvoltage protection element (also known as a transient current suppressor or surge suppressor) for various electronic components. [0003] At present, commercial varistors are mainly electronic ceramic components based on zinc oxide. This varistor material is mixed and sintered with zinc oxide and various other metal oxide additives. The core materi...

Claims

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Application Information

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IPC IPC(8): H01C17/12C23C14/35C23C14/08
Inventor 彭志坚苏海霞符秀丽
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
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