Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Comprehensive diode forward recovery parameter test and analysis platform

A technology of forward recovery and comprehensive testing, applied in the field of high-frequency broadband information signal processing, can solve problems such as difficult to achieve, small forward peak voltage, serious slow recovery diodes, etc., and achieve the effect of reducing technical requirements and saving labor

Active Publication Date: 2014-11-19
徐州振丰原喷灌设备有限公司
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The forward peak voltage of the fast recovery diode in the diode is relatively small, and the slow recovery diode will be very serious.
[0003] In general, the forward recovery characteristics of diodes caused by the many-carrier effect are much faster than the reverse recovery characteristics of the few-carrier effect. Therefore, the test technology level is higher and it is generally difficult to achieve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Comprehensive diode forward recovery parameter test and analysis platform
  • Comprehensive diode forward recovery parameter test and analysis platform
  • Comprehensive diode forward recovery parameter test and analysis platform

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0042] Pulse current amplitude adjustment circuit

[0043] The pulse current amplitude adjustment circuit such as image 3 shown. Its input pulse (high level 5μs, low level 100μs) is generated by the single-chip microcomputer 89C2051, and delivered after being driven by the channel multiplexer 74HC4053. Such a pulse generating circuit is used more often, so I won't repeat it here.

[0044] like image 3 , In order to achieve the test index of 50mA-10A, the current is adjusted in two levels: low level 50mA-1A, high level 1-10A. Adjusting the potentiometer can realize current control, but this potentiometer has an internal inductance, which affects the rising edge time. Moreover, within the voltage drop range of 17V, to achieve 10A current digital regulation, the control is difficult and the accuracy is not high. For this reason, select MOSFET, by controlling its gate-source voltage V GS , to control the drain current I through the tube d , although controlling I d —V ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a comprehensive diode forward recovery parameter test and analysis platform which is characterized by comprising the following units: a pulse generator, a pulse current amplitude adjusting circuit, a pulse edge accelerating circuit, a pulse rise time processing circuit, a pulse rise time signal pulse width-voltage conversion circuit, a tested diode, a forward recovery voltage test and peak detection circuit, a forward recovery time processing circuit, a forward recovery time signal pulse width-voltage conversion circuit, an A / D conversion circuit, a central processor, and a display. A transistor with high feature frequency, low junction capacitance and small leakage current is chosen as a signal processing unit as much as possible, and the transistor is set and adjusted to a non-saturated work state, which can effectively avoid the charge storage effect, and is conducive to bandwidth maintaining and conduction velocity improving. The platform of the invention can be used for measuring and evaluating parameters of power diodes, switching diodes and IGBTs such as forward recovery waveform, forward recovery time and forward recovery voltage peak, and can contribute to the development of high-performance electrical systems.

Description

technical field [0001] The invention belongs to the technical field of high-frequency broadband information signal processing, and specifically refers to a diode forward recovery parameter comprehensive test and analysis system. Background technique [0002] In power electronics and communication equipment such as inverter power supplies, pulse transformers, and radars, the switching transient characteristics of diodes used have a direct impact on reliability and efficiency. For the transient process of diodes, more attention has been paid to the reverse recovery characteristics. However, the process of the diode from cutoff or reverse deflection to forward conduction is also worth noting. When the diode is just turned on, the forward voltage drop will first rise to a maximum value and then drop to a steady state value. This is because during the forward recovery process, due to the capacitive effect of the PN junction, the majority carriers injected from the two poles inc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 韦文生夏鹏蒋佩兰罗飞
Owner 徐州振丰原喷灌设备有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com