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A kind of preparation method of n-type double-sided solar cell

A solar cell and double-sided technology, applied in the field of solar cells, can solve problems such as poor effect of blocking diffusion, increase in process steps and difficulty, increase in production cost of cell sheets, etc., and achieve simple and easy preparation methods, low cost, and improved The effect of capacity

Active Publication Date: 2017-02-08
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is also the problem of diffraction during the process of growing the diffusion barrier film, which makes the effect of blocking diffusion not good; in addition, the diffusion barrier film needs to be removed in subsequent steps, which not only increases the process steps and difficulty, but also increases the Cell Production Cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A method for preparing an N-type double-sided solar cell, comprising the steps of:

[0033] (1) cleaning, cashmere;

[0034] (2) Print boron paste on the front side of the silicon wafer, and then dry it;

[0035] The drying temperature is 200°C and the drying time is 10 minutes;

[0036] (3) Phosphorus paste is printed on the back of the silicon wafer, and then dried;

[0037] The drying temperature is 200°C and the drying time is 10 minutes;

[0038] (4) Pasting the above-mentioned 40 silicon wafers face-to-face, so that the pastes on the facing surfaces are the same to form a silicon wafer group;

[0039] (5) Put the above-mentioned silicon wafer group into a diffusion furnace, and process it at 935° C. for 45 minutes;

[0040] (6) Use hydrofluoric acid with a volume concentration of 7% to clean the side oxide layer of the above-mentioned silicon wafer group at room temperature, and the cleaning time is 250 seconds;

[0041] Then, the tetramethylammonium hydroxid...

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PUM

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Abstract

The invention discloses an N-type two-side solar cell manufacturing method. The method includes the following steps that first, cleaning and velvet making are performed; second, boron pulp is printed on the front faces of silicon wafers and dried; third, phosphor pulp is printed on the back faces of the silicon wafers and dried; fourth, the 10-60 silicon wafers are attached together in a face to face mode, the pulp on the attached faces is same, and a silicon wafer set is formed; fifth, the silicon wafer set is placed in a diffusion furnace and processed at 900 DEG C to 950 DEG C for 30-50 min; sixth, lateral side oxidization layers of the silicon wafer set are cleaned and edges are etched; seventh, acid washing is performed; eighth; anti-reflection coating deposition is performed; ninth, electrodes are printed and sintered. The silicon wafers form the silicon wafer set with a pulp printing method, the diffusion problem of barrier films in the prior art is avoided, processing steps are simplified, the lateral sides of the silicon wafer set can be directly cleaned and etched in the subsequent cleaning and etching process, and therefore the productivity is greatly improved, and cost is saved.

Description

technical field [0001] The invention relates to a preparation method of an N-type double-sided solar cell, belonging to the technical field of solar cells. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. Solar power generation devices, also known as solar cells or photovoltaic cells, can directly convert solar energy into electrical energy. The principle of power generation is based on the photovoltaic effect of semiconductor PN junctions. In the prior art, types of silicon wafers mainly include P-type silicon wafers and N-type silicon wafers. Among them, N-type silicon wafers can be used to prepare solar cells with higher conversion efficiency due to their high minority carrier lifetime and basically no attenuation. Therefore, N-type crystalline silicon solar cells have become a hot spot i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L21/2254H01L31/1804H01L31/1864H01L31/1876Y02E10/547Y02P70/50
Inventor 王登志王栩生
Owner CSI CELLS CO LTD