Preparation method for zinc tin nitride polycrystalline film
A technology of zinc tin nitride and thin film, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems of complicated preparation process, high requirements, increased preparation cost, etc., and achieve the reduction of preparation difficulty and reduction The effect of simple production cost and process
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[0027] Example 1
[0028] Firstly, the quartz wafer substrate is cleaned, and the specific method is: use acetone, ethanol, and deionized water to ultrasonically clean the substrate for 15 minutes each.
[0029] Next, the cleaned quartz wafer substrate and the ZnSn alloy target (the atomic ratio of Zn to Sn is 3:1) are placed at the corresponding positions of the magnetron sputtering equipment. The magnetron sputtering equipment is a high vacuum magnetron sputtering equipment of Shenyang Juzhi Vacuum Equipment Co., Ltd. model JZCK-4003.
[0030] Sputter at room temperature, set the background vacuum to 6×10 -4 Pa. The magnetron sputtering method is adopted under vacuum conditions, the sputtering power is 210W, the working pressure is 1.9Pa, and N ions are bombarded with the cathode ZnSn alloy target, so that the target atoms sputter and react with the N ions to form ZnSnN 2 Deposited on the substrate to form ZnSnN 2 The polycrystalline film is marked as sample (a).
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[0031] Example 2
[0032] Replace the substrate with a silicon wafer substrate, the atomic ratio of Zn to Sn in the ZnSn alloy target is 2:1, and the other process steps and process parameters are the same as those in Example 1. The prepared ZnSnN 2 The polycrystalline film is referred to as sample (b).
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[0033] Example 3
[0034] Replace the substrate with a glass substrate, the atomic ratio of Zn to Sn in the ZnSn alloy target is 3:1, and the other process steps and process parameters are the same as those in Example 1. The prepared ZnSnN 2 The polycrystalline film is marked as sample (c).
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