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Preparation method for zinc tin nitride polycrystalline film

A technology of zinc tin nitride and thin film, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems of complicated preparation process, high requirements, increased preparation cost, etc., and achieve the reduction of preparation difficulty and reduction The effect of simple production cost and process

Active Publication Date: 2014-12-10
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Claims
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Problems solved by technology

[0005] Although the preparation method reported so far has obtained single-phase ZnSnN 2 thin film, but the requirements for the substrate used and the equipment are relatively high, the preparation process is complicated, and the preparation needs to be carried out at high temperature, which greatly increases the preparation cost, which is not conducive to the future development of this material

Method used

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  • Preparation method for zinc tin nitride polycrystalline film
  • Preparation method for zinc tin nitride polycrystalline film
  • Preparation method for zinc tin nitride polycrystalline film

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Firstly, the quartz plate substrate is cleaned, and the specific method is: sequentially use acetone, ethanol and deionized water to ultrasonically clean the substrate for 15 minutes each.

[0029] Next, the cleaned quartz wafer substrate and the ZnSn alloy target (the atomic ratio of Zn to Sn is 3:1) are placed in corresponding positions of the magnetron sputtering equipment. The magnetron sputtering equipment is a high-vacuum magnetron sputtering equipment model JZCK-4003 of Shenyang Juzhi Vacuum Equipment Co., Ltd.

[0030] Sputtering at room temperature, set the background vacuum to 6×10 -4 Pa. The magnetron sputtering method is adopted under vacuum conditions, the sputtering power is 210W, and the working pressure is 1.9Pa. N ions are bombarded on the cathode ZnSn alloy target, so that the target atoms are sputtered and react with N ions to form ZnSnN 2 Deposited on the substrate, forming ZnSnN 2 Polycrystalline film, denoted as sample (a).

Embodiment 2

[0032] The substrate is replaced by a silicon chip substrate, the Zn and Sn atomic ratio of the ZnSn alloy target is 2:1, and other process steps and process parameters are the same as in Example 1, and the prepared ZnSnN 2 The polycrystalline thin film is designated as sample (b).

Embodiment 3

[0034]The substrate is replaced with a glass sheet substrate, the atomic ratio of Zn and Sn of the ZnSn alloy target is 3:1, other process steps and process parameters are the same as those in Example 1, and the prepared ZnSnN 2 The polycrystalline thin film is designated as sample (c).

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Abstract

The invention discloses a preparation method for a zinc tin nitride polycrystalline film. The preparation method comprises the following steps: firstly, placing a cleaned substrate and a zinc tin alloy target material onto corresponding positions of magnetron sputtering equipment, and carrying out vacuum-pumping; ventilating nitrogen gas, regulating working gas pressure to 1-3Pa and sputtering power to 120-300W, bombarding the cathode zinc tin alloy target material by virtue of N ions, and depositing on the substrate to form the zinc tin nitride polycrystalline film. According to the preparation method, by virtue of a magnetron sputtering method, the ZnSnN2 polycrystalline film is grown in a vacuum cavity by one step without other thermal treatment under a low temperature condition, and the preparation method is simple in process, low in energy consumption and capable of greatly lowering the production cost. A quartz slice, a silicon slice, a glass slice or PET flexible plastic, and the like can be adopted as the substrate which has the advantages of low cost, a simple substrate pretreatment process, and the like in comparison with other monocrystal substrates such as an sapphire substrate; and moreover, the ZnSn alloy target material and the nitrogen gas can be used as raw materials, and can be directly purchased, so that the preparation difficulty for the raw materials is lowered.

Description

technical field [0001] The invention relates to the field of semiconductor thin film preparation, in particular to a preparation method of zinc tin nitride polycrystalline thin film. Background technique [0002] New semiconductor thin films are the material basis for emerging interdisciplinary subjects and products such as contemporary microelectronics, optoelectronics, magnetoelectronics, solar energy utilization, and sensors, and have widely penetrated into various fields of contemporary technology. Zinc tin nitride (ZnSnN 2 ) polycrystalline film is Ⅱ-Ⅳ-Ⅴ 2 Group nitride ternary alloy materials, derived from III-V nitride materials represented by GaN and InN, which not only inherit the direct band gap of III-V nitride materials, high luminous efficiency, and electron drift saturation speed High-level and excellent optoelectronic properties, and because of its unique properties such as tunable band gap and tunable conductivity, it has attracted widespread attention. Zn...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06
Inventor 梁凌燕曹鸿涛邓福岭刘权李秀霞罗浩
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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