Method for improving thickness homogeneity of silicon extending slices for CCD device

A silicon epitaxial wafer with uniform thickness technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficult to meet the requirements of CCD devices, and achieve the goal of advancing the development process, meeting high performance, and improving thickness uniformity Effect

Inactive Publication Date: 2015-01-07
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thickness uniformity of silicon epitaxial wafers directly determines the yield and reliability of CCD devices. Therefore, in order to prepare epitaxial wafers that meet the requirements of CCD devices, the uniformity of epitaxial thickness must be strictly controlled. At present, the general requirement for thickness uniformity should not be less than 97%. , but the thickness uniformity control technology of domestic silicon epitaxial wafers has a certain gap compared with foreign countries, and the thickness uniformity is not less than 94%, so it is difficult to meet the requirements of CCD devices

Method used

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  • Method for improving thickness homogeneity of silicon extending slices for CCD device
  • Method for improving thickness homogeneity of silicon extending slices for CCD device
  • Method for improving thickness homogeneity of silicon extending slices for CCD device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) First use HCl gas to etch the base of the epitaxial furnace to remove the residual deposits on the base. The corrosion temperature is set at 1150°C, the purity of HCl gas is ≥99.99%, the flow rate is set at 3L / min, and the corrosion The time is set at 5 minutes, and then the base is re-coated with a layer of intrinsic polysilicon. The raw material for polysilicon growth is trichlorosilane gas with a purity of ≥99.95%. The flow rate is set at 30g / min, and the polysilicon growth time is set at 15 minutes.

[0022] (2) Put a monocrystalline silicon substrate into the pit of the base. The conductivity type of the silicon substrate is P type, polished on one side, the crystal orientation is ±0.5°, the resistivity is 0.01Ω?cm, and the thickness is 450 μm and a diameter of 100 mm. Nitrogen and hydrogen are used to purge the reaction chamber of the epitaxial furnace, the purity of nitrogen and hydrogen are both ≥99.999%, the purge gas flow rate is set to 100L / min, and the p...

Embodiment 2

[0030] (1) Use HCl gas to corrode the base of the epitaxial furnace to remove the residual deposits on the base. The corrosion temperature is set at 1160°C, the purity of HCl gas is ≥99.99%, the flow rate is set at 3L / min, and the corrosion time is Set it to 5 minutes, and then re-wrap the base with a layer of intrinsic polysilicon. The raw material for polysilicon growth is trichlorosilane gas with a purity of ≥99.95%. The flow rate is set to 30g / min, and the polysilicon growth time is set to 15 minutes.

[0031] (2) Put a monocrystalline silicon substrate into the pit of the base. The conductivity type of the silicon substrate is P type, polished on one side, the crystal orientation is ±0.5°, the resistivity is 0.01Ω?cm, and the thickness is 450 μm and a diameter of 100 mm. Nitrogen and hydrogen are used to purge the reaction chamber of the epitaxial furnace, the purity of nitrogen and hydrogen are both ≥99.999%, the flow rate of purge gas is set to 100L / min, and the purge t...

Embodiment 3

[0039] (1) First use HCl gas to etch the base of the epitaxial furnace to remove the residual deposits on the base. The corrosion temperature is set at 1180°C, the purity of HCl gas is ≥99.99%, the flow rate is set at 3L / min, and the corrosion The time is set at 5 minutes, and then the base is re-coated with a layer of intrinsic polysilicon, and the raw material for polysilicon growth is trichlorosilane (SiHCl 3 ) gas with a purity of ≥99.95%, the flow rate is set to 30g / min, and the polysilicon growth time is set to 15min.

[0040] (2) Put a monocrystalline silicon substrate into the pit of the base. The conductivity type of the silicon substrate is P type, polished on one side, the crystal orientation is ±0.5°, the resistivity is 0.01Ω?cm, and the thickness is 450 μm and a diameter of 100 mm. Nitrogen and hydrogen are used to purge the reaction chamber of the epitaxial furnace, the purity of nitrogen and hydrogen are both ≥99.999%, the purge gas flow rate is set to 100L / min...

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Abstract

The invention relates to a method for improving the thickness homogeneity of silicon extending slices for a CCD device. The method comprises the steps: major factors of influencing the thickness homogeneity of the silicon extending slices, such as the adjustment of air flows for the growth of the silicon extending slices, the height of a top disc of a base, the rotation manner of the base, and the like, the thickness homogeneity of the silicon extending slices at different positions on the base in a furnace and different local positions in the silicon extending slices is improved, and a process method for obviously improving the thickness homogeneity of the silicon extending slices for the CCD device is provided, so that the silicon extending slices with high thickness homogeneity are obtained, the performance of the prepared CCD device with a large area array and high resolution is greatly improved, and the rate of finished products is increased. The silicon extending slices prepared by the method can meet the requirements of the CCD device with high performance and high-integration density for the thickness and the homogeneity of extending layers. The homogeneity of the silicon extending slices prepared by the process method can be higher than 98 %, which achieves the domestic and foreign advanced level, so that the silicon extending slices can replace import products, and the developing and the preparing process of the domestic CCD can be greatly promoted.

Description

technical field [0001] The invention relates to the preparation technology of semiconductor materials, in particular to a method for improving the thickness uniformity of silicon epitaxial wafers for CCD devices. Background technique [0002] As a photoelectric coupling device, CCD has the functions of photoelectric conversion, signal storage and signal transmission, and has been widely used in advanced digital cameras, monitors and camcorders, etc. device. Silicon epitaxial wafer is the key basic material for the production of large area array and highly integrated CCD devices, which can effectively reduce the dark current of the device and improve the responsivity and array size. The thickness uniformity of silicon epitaxial wafers directly determines the yield and reliability of CCD devices. Therefore, in order to prepare epitaxial wafers that meet the requirements of CCD devices, the uniformity of epitaxial thickness must be strictly controlled. At present, the general ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L27/146
CPCH01L21/0262H01L21/02532H01L27/148
Inventor 王文林李扬陈涛李明达
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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