Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for extraction of high-purity silicon from crystal silicon cutting waste liquid

A technology for cutting and extracting crystal silicon, which is applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of cutting efficiency reduction and achieve the effects of improving efficiency, no environmental pollution, and continuous process

Inactive Publication Date: 2015-01-14
HENAN CHAOBEI ENG EQUIP
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The working principle of multi-wire cutting is: in the water-based cutting fluid composed of SiC as the abrasive, polyethylene glycol as the dispersant, and water as the solvent, the metal wire drives the silicon carbide abrasive for grinding to cut silicon wafers. In the process of crystalline silicon, as a large amount of silicon powder and a small amount of metal chips enter the cutting fluid, the properties of the cutting fluid gradually change. When the content of these solid impurities accumulates to a certain extent, the cutting efficiency decreases, and the cutting fluid cannot meet the cutting requirements. waste pulp

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for extraction of high-purity silicon from crystal silicon cutting waste liquid
  • Method for extraction of high-purity silicon from crystal silicon cutting waste liquid
  • Method for extraction of high-purity silicon from crystal silicon cutting waste liquid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Such as figure 1 As shown in the process flow chart, including the powder classification device (attached figure 2 ), flotation device, washing, filtering, drying device, vacuum induction cold crucible device (attached image 3 ) to extract the high-purity silicon of the present invention. Among them, the classification system is mainly composed of classifier I, classifier II, cyclone dust collector, bag dust collector and induced draft fan; the vacuum induction cold crucible device is composed of power supply, control system, vacuum system and cold crucible system. The power supply of the vacuum induction device is 100Kw. This implementation proceeds as follows:

[0036] 1) After the precursor material is obtained, the highly dispersed mixed powder of the precursor material is quantitatively added to the closed air classifier through the feeder. The whole classification system is carried out under a slight negative pressure, and the powder enters the classificati...

Embodiment 2

[0043] Such as figure 1 As shown in the process flow chart, including the powder classification device (attached figure 2 ), flotation device, washing, filtering, drying device, vacuum induction cold crucible device (attached image 3 ) to extract the high-purity silicon of the present invention. Among them, the classification system is mainly composed of classifier I, classifier II, cyclone dust collector, bag dust collector and induced draft fan; the vacuum induction cold crucible device is composed of power supply, control system, vacuum system and cold crucible system. The power supply of the vacuum induction device is 100Kw. This implementation proceeds as follows:

[0044] 1) After the precursor material is obtained, the highly dispersed mixed powder of the precursor material is quantitatively added to the closed air classifier through the feeder. The whole classification system is carried out under a slight negative pressure, and the powder enters the classification...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Densityaaaaaaaaaa
Densityaaaaaaaaaa
Login to View More

Abstract

Belonging to the technical field of silicon recycle and purification, the invention discloses a method for extraction of high-purity silicon from waste liquid. The method comprises the steps of: precursor material preparation; material classification and flotation; high temperature smelting and separation of an ingot. According to the preparation method for recycled silicon, a high-purity silicon ingot can be acquired by few processing steps. The preparation process does not involve toxic and harmful substances, and acid-base, so that treatment of the ''three wastes'' can be simple. The whole process is continuous, easy to control, and is easy to realize large scale and automation.

Description

technical field [0001] The invention relates to a method for extracting silicon, in particular to a method for extracting high-purity silicon from waste liquid, and belongs to the technical field of silicon recovery and purification. Background technique [0002] Whether it is monocrystalline silicon used in the semiconductor industry or polycrystalline silicon used in solar cells, it is necessary to cut high-purity crystalline silicon into silicon wafers. At present, countries in the world mainly adopt multi-wire wire cutting technology, which has the advantages of high precision, high yield and high efficiency. The working principle of multi-wire cutting is: in the water-based cutting fluid composed of SiC as abrasive, polyethylene glycol as dispersant, and water as solvent, the metal wire drives silicon carbide abrasives for grinding to cut silicon wafers. In the process of crystalline silicon, as a large amount of silicon powder and a small amount of metal chips enter t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/037
Inventor 马兵胡万明胡鹏飞
Owner HENAN CHAOBEI ENG EQUIP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com