Nanoporous CdZnO film with adjustable surface morphology and preparation method thereof
A surface morphology and nanoporous technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problems of high price, increased material preparation cost, contamination, etc., and achieve low cost, It is convenient for large-area preparation and batch production, and the effect is simple and controllable
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Embodiment 1
[0022] 1) Select the silicon wafer cleaned by the standard RCA process, put it into the reaction chamber of the radio frequency reaction magnetron sputtering device, and the vacuum degree of the reaction chamber is pumped to 1×10 -3 Pa.
[0023] 2) A CdZnO ceramic target with a Cd molar doping amount of 10% was selected as a sputtering source, and a CdZnO film with a thickness of about 50 nm was deposited by radio frequency reactive magnetron sputtering, and the substrate temperature was 300°C.
[0024] 3) Heat-treat the deposited CdZnO film at 600° C. for 1 hour in the air, and then take it out and cool it naturally to obtain a CdZnO film with a nanoporous structure.
[0025] figure 1 It is the SEM image of the nanoporous CdZnO thin film prepared through the above steps. It can be seen from the figure that the film has been fully crystallized, and the surface is covered with "gully"-shaped holes, and the average width of the holes is about tens of nanometers. After analysi...
Embodiment 2
[0027] 1) Select the silicon wafer cleaned by the standard RCA process, put it into the reaction chamber of the radio frequency reaction magnetron sputtering device, and the vacuum degree of the reaction chamber is pumped to 1×10 -3 Pa.
[0028] 2) A CdZnO ceramic target with a Cd molar doping amount of 20% was selected as the sputtering source, and a CdZnO film with a thickness of about 500 nm was deposited by radio frequency reactive magnetron sputtering, and the substrate temperature was 300 °C.
[0029] 3) heat-treat the deposited CdZnO film at 800° C. for 1 hour in the air, and then take it out and cool it naturally to obtain a CdZnO film with a nanoporous structure.
[0030] figure 2 It is the SEM image of the nanoporous CdZnO thin film prepared through the above steps. It can be seen from the figure that the film has been fully crystallized, and the surface is covered with "gully"-shaped holes. The average width of the holes is several hundred nanometers, and they ar...
Embodiment 3
[0032] 1) Select the silicon wafer cleaned by the standard RCA process, put it into the reaction chamber of the radio frequency reaction magnetron sputtering device, and the vacuum degree of the reaction chamber is pumped to 1×10 -3 Pa.
[0033] 2) A CdZnO ceramic target with a Cd molar doping amount of 30% was selected as the sputtering source, and a CdZnO film with a thickness of about 2 μm was deposited by radio frequency reactive magnetron sputtering, and the substrate temperature was 300 °C.
[0034] 3) heat-treat the deposited CdZnO film at 1100° C. for 1 hour in the air, and then take it out and cool it naturally to obtain a CdZnO film with a nanoporous structure.
[0035] image 3 It is the SEM image of the nanoporous CdZnO thin film prepared through the above steps. It can be seen from the figure that the film has been fully crystallized, and the surface is covered with "gully"-shaped holes. The average width of the holes is on the order of microns, and they are int...
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