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Low-electrical-resistivity p-type aluminum gallium nitrogen material and preparation method thereof

A low-resistivity, aluminum-gallium-nitride technology, applied in circuits, electrical components, laser components, etc., can solve problems such as severe acceptor compensation, achieve the goal of reducing acceptor compensation, reducing resistivity, and increasing luminous intensity Effect

Inactive Publication Date: 2015-02-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

The other is that the acceptor compensation effect in P-type gallium nitride material is serious

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  • Low-electrical-resistivity p-type aluminum gallium nitrogen material and preparation method thereof
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  • Low-electrical-resistivity p-type aluminum gallium nitrogen material and preparation method thereof

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[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0036] figure 1 A schematic structural view of a low-resistivity P-type AlGaN material proposed by the present invention is shown. Such as figure 1 As shown, the low-resistivity P-type AlGaN material sequentially includes a substrate 10, a low-temperature nucleation layer 11, an unintentionally doped template layer 12, and a P-type AlGaN layer grown at low temperature with low carbon impurity concentration from bottom to top. 13. Wherein: the substrate 10 is a sapphire substrate or a silicon carbide substrate or a gallium nitride substrate. The low-temperature nucleation layer 11 is fabricated on the substrate 10, and its material is gallium nitride or aluminum nitride, the growth temperature is 500-600° C., and the th...

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Abstract

The invention discloses a low-electrical-resistivity p-type aluminum gallium nitrogen material and a preparation method thereof. The preparation method includes the following steps: raising the temperature of a substrate and carrying out heat treatment under a hydrogen environment and removing impurities of the surface of the substrate; growing a low-temperature nucleating layer on the substrate and providing a nucleating center for follow-up growth materials; growing a layer of unintentionally doped template layer on the low-temperature nucleating layer; epitaxially growing a layer of low-carbon-impurity-concentration P-type aluminum gallium nitrogen layer on the unintentionally doped template layer in a low-temperature; and under a nitrogen environment, carrying out high-temperature annealing so as to make an acceptor in the P-type aluminum gallium nitrogen layer activated and thus the low-electrical-resistivity p-type aluminum gallium nitrogen material is obtained. When the preparation method is changed, through change of the growth conditions, the concentration of unintentionally doped carbon impurities in the low-temperature-growth P-type aluminum gallium nitrogen material is reduced so that the compensation action of the acceptor is reduced and an objective of reducing the electrical resistivity of the P-type aluminum gallium nitrogen material is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a low-resistivity P-type aluminum-gallium-nitride material and a preparation method thereof. Background technique [0002] Blue-green light-emitting diodes (LEDs) have extremely important applications in the fields of display, control and communication, and have become an indispensable component in current full-color displays and traffic signal signs. Blu-ray laser diodes (LDs) are used in high-density storage discs to increase the storage density by nearly four times compared with red laser diodes, which can better meet the needs of the information age. In addition, blue laser diodes also have great application value in medical diagnosis and submarine exploration. [0003] However, in order to obtain a longer luminous wavelength, the active regions of blue-green LEDs and LDs must adopt a multi-quantum well structure with high indium composition (gener...

Claims

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Application Information

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IPC IPC(8): H01L33/32H01L33/00H01S5/343
CPCH01L33/32H01L33/005H01L2933/0008H01S5/34333H01S5/34353
Inventor 杨静赵德刚乐伶聪李晓静何晓光
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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