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Hall element and preparation method thereof

A Hall element, AlGaAs technology, applied in the field of Hall element based on two-dimensional electron gas and its preparation, can solve the problem of low lattice quality of isolation layer and barrier layer

Inactive Publication Date: 2015-03-04
SUZHOU JUZHEN PHOTOELECTRIC
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to provide a Hall element structure and its preparation method, which are used to solve the problem of Al x Ga 1-x The problem of lower lattice quality of the As space isolation layer and barrier layer (because the lattice-mismatched In x Ga 1-x As channel layer), except In x Ga 1-x Except for the As channel layer, other epitaxial layer materials are Hall element structures with high lattice quality

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  • Hall element and preparation method thereof

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Embodiment 1

[0018] First, a GaAs single crystal substrate is selected, and a 10nm AlAs sacrificial layer is grown on the substrate by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), and then a 30nm N Type planar doped Al x Ga 1-x As barrier layer, 3nm intrinsic Al x Ga 1-x As space isolation layer and 12nm intrinsic In x Ga 1-x As channel layer.

[0019] After the growth is completed, the epitaxial wafer is taken and adhered to a flexible film. Then soak in the hydrofluoric acid solution to etch the sacrificial layer AlAs to realize the separation of the epitaxial functional layer from the substrate. After simple processing, the substrate can continue to be used for epitaxial growth.

[0020] The peeled epitaxial wafer is adhered to a rigid support substrate to facilitate subsequent process operations. Using the traditional Hall element process, the electrodes are photoetched picture shape, vapor deposition of gold (Au)-germanium (Ge)-nickel (Ni)...

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Abstract

The invention discloses a hall element based on two-dimensional electron gas (2-DEG) and a preparation method thereof, the hall element structure comprises the InGaAs (In+Ga+As) channel layer inversion growing in an extension mode, AlGaAs (Al+Ga+As) space insolating layer and AlGaAs (Al+Ga+As) barrier layer. The preparation method comprises the steps as follows: growing a sacrificial layer on the gallium arsenide (GaAs) substrate; orderly growing the plane type doping (delta-doping) AlGaAs barrier layer, intrinsic AlGaAs space insolating layer and intrinsic InGaAs channel layer on the sacrificial layer in an inversion mode, separating the extension function layer from the substrate through the substrate stripping technology and bonding the function layer on a support substrate; preparing metal electrode on the AlGaAs barrier layer, etching the table surface, executing passivation technology, scribing and packaging to obtain the object hall element.

Description

technical field [0001] The invention relates to the field of Hall sensors, in particular to a Hall element based on two-dimensional electron gas grown in a flip-chip manner and a preparation method thereof. Background technique [0002] In the traditional manufacture of Hall elements, in order to improve the sensitivity of Hall elements, it is necessary to increase the electron mobility of the material as much as possible. Modulated doped heterojunction materials based on two-dimensional electron gas, by confining electrons on the surface of the undoped channel layer, realize the spatial separation of electrons and impurity ions, greatly reducing the scattering of impurity ions on electrons, and greatly The electron mobility of the material is improved. The common two-dimensional electron gas structure is aluminum gallium arsenic (Al x Ga 1-x As) / Gallium Arsenide (GaAs), where Al x Ga 1-x As is a doped barrier layer, GaAs is an intrinsic channel layer, and electrons are...

Claims

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Application Information

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IPC IPC(8): H01L43/06H01L43/10H01L43/14
Inventor 胡双元朱忻
Owner SUZHOU JUZHEN PHOTOELECTRIC