A kind of method for preparing cobalt oxide electrode of nano sheet structure
A technology of cobalt oxide and nanosheets, applied in the direction of hybrid capacitor electrodes, etc., can solve the problem of low specific capacitance, achieve the effect of improving charge and discharge rate, simple method, and simple preparation process
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specific Embodiment approach 1
[0018] Embodiment 1: A method for preparing a nanosheet structure cobalt oxide electrode described in this embodiment is specifically carried out according to the following steps:
[0019] 1. Put the Si substrate in an acetone solution and ultrasonically clean it for 10-20 minutes, and then use magnetron sputtering equipment to prepare a Co coating on the Si substrate to obtain a Co-coated silicon wafer;
[0020] 2. Place the Co-coated silicon wafer in the plasma-enhanced chemical vapor deposition vacuum device, evacuate to a pressure below 5Pa, pass in argon gas, adjust the flow rate of the argon gas to 10sccm-50sccm, and adjust the plasma-enhanced chemical vapor deposition vacuum The pressure in the device is 100Pa~1000Pa, and under the pressure of 100Pa~1000Pa and argon atmosphere, the temperature is raised to 500℃~800℃ within 25min;
[0021] 3. Introduce oxygen, adjust the gas flow rate of oxygen to 10sccm, adjust the gas flow rate of argon to 50sccm~90sccm, adjust the pre...
specific Embodiment approach 2
[0027] Embodiment 2: This embodiment differs from Embodiment 1 in that: in Step 1, a Co coating with a thickness of 10 nm˜1000 nm is prepared on the Si substrate by using a magnetron sputtering device. Others are the same as in the first embodiment.
specific Embodiment approach 3
[0028] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that in step 1, a Co coating with a thickness of 100 nm is prepared on the Si substrate by using a magnetron sputtering device. Others are the same as in the first or second embodiment.
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