A kind of preparation method of the functional paste of sheet type electrostatic suppressor

An electrostatic suppression, chip technology, applied in the direction of resistors, resistor manufacturing, overvoltage protection resistors, etc., can solve the problems of complex manufacturing process and high cost, and achieve fast response, strong impact resistance, and good comprehensive performance Effect

Active Publication Date: 2017-02-08
CHINA ZHENHUA GRP YUNKE ELECTRONICS
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The invention provides a method for preparing functional slurry of a thick-film electrostatic suppressor, aiming at the disadvantages of complex manufacturing process and high cost of the existing electrostatic protection components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of the functional paste of sheet type electrostatic suppressor

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] A method for preparing functional slurry for a chip electrostatic suppressor, using a three-phase composite material system of glass, metal and ceramics with non-linear resistance characteristics, ceramic phases and glass phases containing various oxides to ensure that the material system in When a low voltage is applied, it exhibits high resistance, and a suitable metal phase ensures that the material exhibits a low resistance state when a high voltage is applied: at 20V, the resistance is generally above 10GΩ, which ensures that no static electricity occurs in the normal working circuit , the leakage current is as low as the nanoampere level, which has obvious advantages compared with zinc oxide varistors.

[0032] In addition, the appropriate ratio of metal powder, glass powder and ceramic powder is used to ensure that the metal powder is covered by ceramic phase, so that no ohmic contact will be formed during the electrostatic shock process, which greatly improves th...

Embodiment 1

[0034] In the embodiment of the present invention, the preparation method of the functional slurry of the chip-type electrostatic suppressor, the steps are as follows:

[0035] Step (1): According to the mass ratio, mix lead oxide 30, aluminum oxide 30, silicon dioxide 4, boron trioxide 15, and zinc oxide 2 first, then add deionized water, and use an agate jar planetary ball mill for 1.5 hours , the rotating speed is 300 rpm, and the obtained ball milling mixture is dried at 80°C for later use;

[0036] Step (2): preparing ceramic powder, including the following sub-steps,

[0037] Step (2.1): Raise the raw material dried in step (1) to 1000°C within 2.5 hours and keep it warm for 0.5 hours, then cool naturally to obtain white ceramics;

[0038] Step (2.2): vibrate and grind the ceramics obtained in step (2.1) so that the particle size is less than 2mm, and then use an agate pot planetary ball mill for 3 hours at a speed of 350 rpm, dry at 80°C, and crush through an 80-mesh s...

Embodiment 2

[0043]In the embodiment of the present invention, the preparation method of the functional slurry of the chip-type electrostatic suppressor, the steps are as follows:

[0044] Step (1): According to the mass ratio, mix lead oxide 35, aluminum oxide 40, silicon dioxide 5, boron trioxide 20, and zinc oxide 4 first, then add deionized water, and use agate jar planetary ball mill for 2 hours, The rotating speed is 322 rpm, and the obtained ball milling mixture is dried at 100°C for use;

[0045] Step (2): preparing ceramic powder, including the following sub-steps,

[0046] Step (2.1): Raise the raw material dried in step (1) to 1200°C within 2 hours and keep it warm for 1 hour, then cool naturally to obtain white ceramics;

[0047] Step (2.2): vibrate and grind the ceramics obtained in step (2.1) so that the particle size is less than 2mm, and then use an agate pot planetary ball mill for 4 hours at a speed of 387 rpm, dry at 100°C, and crush through a 100-mesh sieve for later u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a functional slurry for a sheet-type electrostatic suppressor, which comprises the following steps: ① mixing the following compounds according to the mass component ratio: 30-40 lead oxide, 30-45 aluminum oxide, 30-45 aluminum dioxide Silicon 4-6, diboron trioxide 15-25, zinc oxide 2-6; ② Ball mill the mixture and dry it at 100°C; ③ The dried raw material is heated to 1200°C for 3 hours and kept for 1 hour, then naturally cooled ; ④ Vibrate and ball mill the ceramic material obtained from the reaction to obtain ceramic powder, and test the particle size and specific surface area; into slurry. The functional slurry developed by the invention can be applied to a chip-type electrostatic suppressor, and can withstand more than 1000 times of 8KV electrostatic shock.

Description

technical field [0001] The invention relates to an overvoltage protection component material against static electricity, in particular to a preparation method of functional slurry used for making a small-sized chip static suppressor by using a thick film process platform. Background technique [0002] Electrostatic Discharge (ESD) is the main cause of failure of electronic products due to electrical overstress (EOS). The main electrostatic discharge modes include: Human Body Model (HBM), Machine Model (MM), component Charging Mode (CDM) and Field Induction Mode (FIM). [0003] In general, the harmful forms of electrostatic discharge to electronic products are as follows: 1. Electrostatic pulses directly impact electronic products, causing damage to devices, and portable electronic products are especially vulnerable to ESD damage caused by human contact. Second, static electricity impacts metal objects, and the electromagnetic field generated instantaneously causes the funct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01C17/00H01C17/30H01C7/12
Inventor 庞锦标张秀韩玉成
Owner CHINA ZHENHUA GRP YUNKE ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products