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Encapsulation structure and encapsulation method of organic light emitting diode device

An electroluminescent device and packaging structure technology, applied in the direction of electro-solid devices, electrical components, semiconductor devices, etc., can solve the problems of loss of desiccant absorption capacity, decreased device life, easy to generate cracks, etc., to achieve good step coverage and The effect of large area thickness uniformity, small influence and strong adhesion

Inactive Publication Date: 2015-04-15
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the desiccant in the device absorbs a large amount of oxygen and water vapor, the desiccant loses its absorption capacity in a short period of time, resulting in the gradual accumulation of oxygen and water vapor in the device, which significantly reduces the life of the device; the glass cover usually used Or the metal cover plate is a brittle material, which is prone to cracks, and the device will appear very thick after packaging, which is not suitable for flexible devices

Method used

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  • Encapsulation structure and encapsulation method of organic light emitting diode device
  • Encapsulation structure and encapsulation method of organic light emitting diode device
  • Encapsulation structure and encapsulation method of organic light emitting diode device

Examples

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Embodiment 1

[0058] figure 1 It is a schematic diagram of the packaging structure of the organic electroluminescent device in Example 1; as figure 1 As shown, the packaging structure of the organic electroluminescent device includes an ITO glass substrate 11, an organic light-emitting functional layer 12, a cathode 13 and a thin film encapsulation layer 20; the thin film encapsulation layer 20 includes five germanium oxynitride film layers 21 and inorganic barrier The encapsulation unit composed of layer 22.

[0059] A method for encapsulating an organic electroluminescent device, comprising the steps of:

[0060] (1) Pre-treatment of ITO glass substrate (11): First, clean the ITO glass with acetone, ethanol, deionized water, and ethanol in sequence, all of which are cleaned with an ultrasonic cleaner. dry, oven dry stand-by; then surface activation treatment is carried out to the cleaned ITO glass, to increase the oxygen content of the conductive surface layer, improve the work function...

Embodiment 2

[0076] A method for encapsulating an organic electroluminescent device, comprising the steps of:

[0077] (1), (2), (3) are the same as embodiment 1;

[0078] (4) Preparation of thin film encapsulation layer:

[0079] a) Preparation of germanium oxynitride film layer: the germanium oxynitride film layer was prepared on the cathode surface by plasma enhanced chemical vapor deposition (PECVD), the working pressure was 10Pa, the deposition temperature was 30°C, and the radio frequency power was 0.1W / cm 2 ; The gas source adopted in the process of depositing germanium oxynitride layer is hexamethyldigermanium amine (HMDG), ammonia gas (NH 3 ) and oxygen (O 2 ), the loading gas is argon (Ar); 3 ) flow rate of 18sccm, oxygen (O 2 ) flow rate is 18 sccm, the flow rate of argon gas (Ar) is 80 sccm, and the thickness of the germanium oxynitride film layer is 190 nm;

[0080] b) Preparation of inorganic barrier layer: Atomic layer deposition (ALD) was used to prepare an inorganic...

Embodiment 3

[0085] A method for encapsulating an organic electroluminescent device, comprising the steps of:

[0086] (1), (2), (3) are the same as embodiment 1;

[0087] (4) Preparation of thin film encapsulation layer:

[0088] a) Preparation of germanium oxynitride film layer: a germanium oxynitride film layer was prepared on the cathode surface by plasma enhanced chemical vapor deposition (PECVD), the working pressure was 50Pa, the deposition temperature was 50°C, and the radio frequency power was 0.5W / cm 2 ; The gas source adopted in the process of depositing germanium oxynitride layer is hexamethyldigermanium amine (HMDG), ammonia gas (NH 3 ) and oxygen (O 2 ), the loading gas is argon (Ar); the flow rate of hexamethyldigermanamine (HMDG) is 12 sccm, ammonia (NH 3 ) flow rate is 15sccm, oxygen (O 2 ) flow rate is 16 sccm, the flow rate of argon (Ar) is 76 sccm, and the thickness of germanium oxynitride film layer is 180nm;

[0089] b) Preparation of inorganic barrier layer: A...

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Abstract

The invention discloses an encapsulation structure of an organic light emitting diode device. The encapsulation structure includes an anode electric conduction substrate as well as an organic light-emitting functional layer, a cathode and a thin film encapsulation layer which are sequentially stacked on the anode electric conduction substrate, wherein the thin film encapsulation layer includes germanium oxynitride film layers and inorganic barrier layers which are sequentially stacked on the cathode, wherein the germanium oxynitride film layers are made of a germanium oxynitride compound, and the inorganic barrier layers are made of B2O3:Cl, Al2O3:Cl, Ga2O3:Cl, In2O3:Cl or Tl2O3:Cl. The thin film encapsulation layer in the encapsulation structure of the invention has very high density, and therefore, with the encapsulation structure adopted, erosion of organic compounds and electrodes in the organic light emitting diode device which is caused by matters such as oxygen and water vapor can be effectively reduced, and therefore, the service life of the device, especially a flexible device can be prolonged, the service life of the device can reach more than 13700 hours (T70@1000cd / m<2>). The invention also provides an encapsulation method of an organic light emitting diode device.

Description

technical field [0001] The invention relates to the technical field of organic electroluminescent devices, in particular to a packaging structure and a packaging method for organic electroluminescent devices. Background technique [0002] Currently, organic electroluminescent devices (OLEDs) suffer from a short lifetime, which is mainly caused by the intrusion of oxygen and water vapor. On the one hand, oxygen is a quencher, which will significantly reduce the quantum efficiency of luminescence. At the same time, oxygen will oxidize the luminescent layer, and the carbonyl compound produced is also an effective quencher; on the other hand, the influence of water vapor is more obvious, it The main way of destruction is to make the organic compound in the device hydrolyze, and also react with the metal cathode, which greatly reduces its stability, resulting in device failure and reduced service life. Therefore, in order to effectively suppress the degradation and failure of or...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/56C23C16/30C23C16/44C23C16/455
CPCC23C16/308H10K50/84H10K71/00
Inventor 周明杰钟铁涛王平张振华
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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