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Aminopyridine Ge(II) proplastid used as microelectronic phase change memory as well as preparation method of aminopyridine Ge(II) proplastid

A phase change memory and aminopyridine technology, applied in the field of semiconductor and microelectronic materials, can solve the problems of harsh conditions, complex synthesis process, poor thermal stability, etc., and achieve the effects of mild preparation conditions, simple synthesis method and improved efficiency

Active Publication Date: 2015-04-29
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (1) Poor thermal stability and low volatility, which are not conducive to transportation, storage, production and use;
[0006] (2) The synthesis process is complicated, the conditions are harsh, and the preparation is relatively difficult

Method used

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  • Aminopyridine Ge(II) proplastid used as microelectronic phase change memory as well as preparation method of aminopyridine Ge(II) proplastid
  • Aminopyridine Ge(II) proplastid used as microelectronic phase change memory as well as preparation method of aminopyridine Ge(II) proplastid
  • Aminopyridine Ge(II) proplastid used as microelectronic phase change memory as well as preparation method of aminopyridine Ge(II) proplastid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment 1: a preparation method of aminopyridine Ge(II) used as a microelectronic phase change memory, comprising the following steps:

[0033] (1) Dissolve 2-aminopyridine in diethyl ether, the mass ratio of 2-aminopyridine to diethyl ether is 1:5, add to the diethyl ether solution of methyl lithium under the condition of keeping stirring at -78 ° C, 2-aminopyridine and The molar ratio of methyllithium was 1.0:1.0, the concentration of the ether solution of methyllithium was 1.0M, and the stirring speed was 700 rev / min; after returning to room temperature, the stirring reaction was continued for 2 hours, and the Li complex was allowed to stand after the reaction was completed. stand-by;

[0034] (2) The Li complex obtained in step (1) is mixed with toluene, and the mass ratio of the Li complex to toluene is 1:5 to obtain a toluene solution of lithium salt. Under the condition of -78 ℃, according to the molar ratio of lithium salt and metal germanium 2.0:1.0, the to...

Embodiment 2

[0037] Embodiment 2: a preparation method of aminopyridine Ge(II) used as a microelectronic phase change memory, comprising the following steps:

[0038](1) Dissolve 2-trimethylsilylaminopyridine in n-hexane solvent, the mass ratio of 2-trimethylsilylaminopyridine to n-hexane solvent is 1:10, and add formaldehyde while stirring at -65°C In the ether solution of lithium lithium, the molar ratio of 2-trimethylsilylaminopyridine to methyl lithium is 1.0:1.2, the concentration of the ether solution of methyl lithium is 1.3M, and the stirring speed is 1300 rpm; return to room temperature Then continue to stir and react for 3 hours, after the reaction finishes, the Li complex is left standing for use;

[0039] (2) Mix the Li complex obtained in step (1) with toluene, the mass ratio of the Li complex to toluene is 1:10, to obtain a toluene solution of the lithium salt. At -65°C, according to the molar ratio of lithium salt to metal germanium of 2.0:1.2, the toluene solution of lithi...

Embodiment 3

[0042] Embodiment three: a kind of preparation method of aminopyridine Ge(II) used as microelectronic phase change memory, comprises the following steps:

[0043] (1) Dissolve 2-methylaminopyridine in n-hexane solvent, the mass ratio of 2-methylaminopyridine to n-hexane solvent is 1:15, add methyllithium ether solution under the condition of keeping stirring at -54°C , the molar ratio of 2-methylaminopyridine to methyllithium is 1.0:1.2, the concentration of the ether solution of methyllithium is 1.5M, and the stirring speed is 1700 rpm; after returning to room temperature, continue to stir and react for 4 hours, and the reaction ends Afterwards, the Li complex is left to stand for use;

[0044] (2) Mix the Li complex obtained in step (1) with toluene, and the mass ratio of the Li complex to toluene is 1:15 to obtain a toluene solution of lithium salt. At -54°C, according to the molar ratio of lithium salt to metal germanium of 2.0:1.3, the toluene solution of lithium salt wa...

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Abstract

The invention relates to an aminopyridine Ge(II) proplastid used as a microelectronic phase change memory. The aminopyridine Ge(II) proplastid taking aminopyridine and a derivative thereof as a ligand is prepared by the following steps: (1) dissolving aminopyridine and the derivative thereof in a reaction solvent, and adding an alkyl lithium solution at (-78)-0 DEG C, wherein the molar ratio of aminopyridine or the derivative thereof to the alkyl lithium solution is 1.0: (1.0-1.4); continuously stirring at room temperature and standing a Li compound for later use; (2) mixing the Li compound obtained in the step (1) with methylbenzene, dropwise adding into an ethyl ether solution of germanium dichloride according to a molar ratio of lithium salt to metal germanium being 2.0: (1.0-1.4) at (-78)-0 DEG C, and raising the temperature to room temperature; and (3) filtering and concentrating the mixture obtained in the step (2), extracting the filter residue by dichloromethane, collecting a filtrate, and crystallizing at low temperatures of (-40)-0 DEG C to obtain the aminopyridine Ge(II) proplastid. The synthetic method is simple and the prepared proplastid is high in thermal stability, good in volatility and excellent in film-forming property, so that the proplastid is a potential important proplastid for preparing the phase change memory.

Description

technical field [0001] The invention relates to an aminopyridine Ge(II) precursor used as a microelectronic phase change memory and a preparation method thereof. The complex is suitable for the preparation of materials in the phase change memory, and relates to the field of semiconductor and microelectronic materials. Specifically, it relates to a thin film deposition precursor with excellent volatility and good thermal stability. Background technique [0002] With the advancement of science and technology, semiconductor technology has developed rapidly, and the manufacturing process technology of microelectronic devices such as memory has also changed. Phase change memory (PCRAM) combines the high capacity and low cost of dynamic random access memory (DRAM) with the high speed, low voltage and low power consumption of static random access memory (SRAM), and has become a new generation of semiconductor memory. [0003] As a non-volatile storage technology, PCRAM will have m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F7/10C07D213/74C07D213/72H01L51/30
Inventor 丁玉强王慧君苗红艳朱振中
Owner JIANGNAN UNIV
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