Method for electrochemical deposition of epitaxial CeO2 thick film on metal substrate

A technology of metal baseband and deposition method, applied in the direction of electrolytic inorganic material coating, etc., can solve the problems of micro-cracks, cost increase, etc., and achieve the effect of smooth surface, reduction of preparation cost, and refinement of particles

Inactive Publication Date: 2015-04-29
SHANGHAI UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, CeO2 has a serious defect, that is, when the thickness of the film on the metal substrate exceeds a certain value (about 70 nm), microcracks will appear
Therefore, CeO2 is usually combined with other buffer layer materials to form a multi-layer film structure to meet the needs of the high-temperature superconducting coating conductor buffer layer, which directly leads to an increase in cost

Method used

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  • Method for electrochemical deposition of epitaxial CeO2 thick film on metal substrate
  • Method for electrochemical deposition of epitaxial CeO2 thick film on metal substrate
  • Method for electrochemical deposition of epitaxial CeO2 thick film on metal substrate

Examples

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Embodiment 1

[0025] In this example, see figure 1 and figure 2 , epitaxial CeO on metal substrate 2 The electrochemical deposition method of a thick film, the specific process steps are:

[0026]a. Prepare the solution: First, weigh 0.0986g of cerium chloride medicine with a balance, place it in a beaker dried after ultrasonic cleaning, and then dilute the total concentration of cations to 2 mmol / L with dimethyl sulfoxide. After the solution is prepared, use Seal with plastic wrap, and stir on a magnetic stirrer for about 10 hours to fully dissolve the solute;

[0027] b. Electrodeposition process: Pour the solution obtained in step a into a self-made glass container, use the NiW substrate as the cathode, and the FTO conductive glass as the anode. Before deposition, the NiW substrate is ultrasonically cleaned in acetone and absolute ethanol for 5 minutes. mode with a current density of 0.2 mA / cm 2 , the deposition time is 4~7min, and the thickness of the deposited film is 60~100 nm. T...

Embodiment 2

[0031] This embodiment is basically the same as Embodiment 1, especially in that:

[0032] In this example, see Figure 3~Figure 5 , epitaxial CeO on metal substrate 2 The electrochemical deposition method of a thick film, the specific process steps are:

[0033] a. Configuration solution: first weigh 0.0986g of cerium chloride with a balance, place it in a beaker dried after ultrasonic cleaning, and then dilute the total concentration of cations to 2 mmol / L, after the solution configuration is completed, seal it with plastic wrap, put it on a magnetic stirrer and stir for about 10 hours, so that the solute is fully dissolved;

[0034] b. Electrodeposition process: Pour the solution obtained in step a into a self-made glass container, use the NiW substrate as the cathode, and the FTO conductive glass as the anode. Before deposition, the NiW substrate is ultrasonically cleaned in acetone and absolute ethanol for 5 minutes. mode with a current density of 0.2 mA / cm 2 , the d...

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Abstract

The invention discloses a method for electrochemical deposition of an epitaxial CeO2 thick film on a metal substrate. According to the method, an inorganic cerium salt, dimethyl sulfoxide and anhydrous ethanol are used as raw materials, and a uniform and compact flawless single-buffer-layer CeO2 thick film with a high-double-shaft structure is successfully extended on the metal substrate by the steps of weighing a sample, preparing a solution, stirring, performing electrodeposition, rinsing, drying and performing annealing heat treatment under a non-vacuum condition, so that a key technology and a simple buffer layer structure are provided for a second-generation high-temperature superconducting coating conductor buffer layer, the problem that the CeO2 thick film generates cracks and a BaCeO3 secondary phase is overcome, the substrate is not oxidized, and the superconducting transition of a superconducting layer is realized. By adopting the method disclosed by the invention, the buffer layer structure is simplified, the buffer layer quality is improved, and the equipment cost is reduced, so that a key technology and a structure are provided for researching the high-temperature superconducting coating conductor buffer layer, and the method is suitable for large-scale production application.

Description

technical field [0001] The invention relates to a method for preparing a superconducting material, in particular to a method for preparing a buffer layer of a second-generation high-temperature superconducting coating conductor, which is applied to the technical field of high-temperature superconducting coating conductors. Background technique [0002] The development of superconducting materials has gone through a process from simple metals to complex compounds. After the discovery of copper oxide superconductors, a wave of research on oxide superconductors was set off, and then a series of copper oxide superconductors with temperatures higher than liquid nitrogen were discovered. Due to their different intrinsic characteristics, synthesis technology and environmental pollution and other factors, the practical level of various copper oxide superconductors varies greatly. Some are only suitable for basic research, while the more practical ones are concentrated in Y123, Bi221...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/04
Inventor 蔡传兵桑丽娜鲁玉明刘志勇白传易
Owner SHANGHAI UNIV
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