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Pn junction and preparation method

A pn junction, p-type technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as restricting the application of SnO, limited types of pn junctions, etc., to reduce edge discharge effects, low cost, and improve precision. Effect

Active Publication Date: 2015-04-29
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Due to the lack of research on SnO semiconductors, the types of pn junctions prepared by SnO are limited, which greatly restricts the application of SnO.

Method used

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preparation example Construction

[0054] In the preparation process of the pn junction of the present invention, if the deposition thickness of the p-type SnO semiconductor layer 120 is too small, the performance of the formed pn junction is not good and cannot meet the practical application; the deposition thickness is too large, which not only increases the cost, And it is not conducive to the development trend of miniaturization of the device. Therefore, the thickness of the p-type SnO semiconductor layer 120 is preferably 50 nm to 80 nm. Within this thickness range, the resulting pn junction has a significant rectifying effect.

[0055] In the pn junction of the present invention, if the cross-sectional area of ​​the electrode is too small, larger resistance will be generated, and preparation is difficult; if the cross-sectional area of ​​the electrode is too large, leakage is likely to occur, which reduces the safety performance of the device. Preferably, as an implementation manner, the ratio of the cross-s...

Embodiment 1

[0093] (1) Put ρ 2 Sample wafers, and clean and dry;

[0094] (2) In the sample wafer Spin-coating a layer of photoresist on the crystal surface to form a first mask;

[0095] (3) Using ultraviolet lithography to form the first mask, a circular window with a diameter of 160 μm is formed;

[0096] (4) Using electron beam evaporation equipment to evaporate the tin dioxide evaporation material at room temperature, and deposit an amorphous SnO semiconductor layer on the circular window to obtain a Si-SnO composite; wherein the deposition thickness of the SnO semiconductor layer is 80 nm;

[0097] (5) Wash the Si-SnO composite obtained in step (4) with acetone and deionized water;

[0098] (6) Place the cleaned Si-SnO composite body in a rapid annealing furnace under an argon atmosphere and anneal at 350°C for 10 minutes;

[0099] (7) Spin-coating a layer of photoresist on the surface of the annealed Si-SnO composite to form a second mask;

[0100] (8)Using the second mask of ultraviolet lith...

Embodiment 2

[0104] (1) Put ρ 2 Sample silicon wafers, and clean and dry;

[0105] (2) In the sample wafer Spin-coating a layer of photoresist on the crystal surface to form a first mask;

[0106] (3) Using ultraviolet lithography to form the first mask, a circular window with a diameter of 160 μm is formed;

[0107] (4) Using electron beam evaporation equipment to evaporate the tin dioxide evaporating material at room temperature, deposit an amorphous SnO semiconductor layer on the circular window to obtain a Si-SnO composite; wherein the deposition thickness of the SnO semiconductor layer is 80 nm;

[0108] (5) Wash the Si-SnO composite obtained in step (4) with acetone and deionized water;

[0109] (6) Place the cleaned Si-SnO composite in a rapid annealing furnace, and anneal at 400°C for 10 minutes under an argon atmosphere;

[0110] (7) Spin-coating a layer of photoresist on the surface of the annealed Si-SnO composite to form a second mask;

[0111] (8)Using the second mask of ultraviolet lith...

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Abstract

The invention discloses a pn junction and a preparation method thereof. The pn junction comprises an n-type Si semiconductor layer and a p-type SnO semiconductor layer located in the middle area of the n-type Si semiconductor layer. A first electrode is arranged on the n-type Si semiconductor layer, and a second electrode is arranged on the p-type SnO semiconductor layer. The pn junction has the obvious rectification effect and can be applied to semiconductor devices such as a light emitting diode, a solar battery, a photoelectric detector and a gas sensitive sensor, and the application range of stannous oxide is enlarged.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a pn junction and a preparation method thereof. Background technique [0002] With the rapid development of transparent electronics, oxide semiconductor pn junctions have become a research focus. Due to the intrinsic defects of oxides and the limitation of preparation technology, p-type hole conducting materials with stable high performance are scarce. [0003] SnO, as an emerging intrinsic p-type oxide semiconductor material, has great application potential. At present, for SnO semiconductors, Hiroshi Yanagi et al. used a pulsed laser method to prepare a SnO homojunction with a turn-on voltage of 0.7V and a rectification ratio of 25 (Bipolar Conduction in SnO Thin Films, Hideo Hosono, Yoichi) at ±2V. Ogo etal, Electrochemical and Solid-State Letters, 2011, 14, 1); KCSanal et al. prepared a p-SnO / n-ZnO heterogeneous pn junction by magnetron sputtering, with an opening v...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/24H01L21/04H01L21/363
CPCH01L21/04H01L29/06H01L29/24H01L29/401H01L29/41H01L29/66083
Inventor 梁凌燕李秀霞曹鸿涛罗浩刘权秦瑞锋
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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