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High-voltage-resistant ceramic material and preparation method thereof

A ceramic material, high withstand voltage technology, applied in the field of ceramic materials doped with Nb2O5-CaO-Bi2O3 series

Active Publication Date: 2015-05-06
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] The present invention aims to overcome the performance defects that the existing dielectric materials cannot simultaneously achieve high withstand voltage, low dielectric loss, and high capacitance temperature stability. The present invention provides a high withstand voltage Nb 2 o 5 -CaO-Bi 2 o 3 Ceramic material and its preparation method

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  • High-voltage-resistant ceramic material and preparation method thereof
  • High-voltage-resistant ceramic material and preparation method thereof
  • High-voltage-resistant ceramic material and preparation method thereof

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preparation example Construction

[0039] The preparation method of the ceramic material of the present invention is a traditional oxide synthesis and sintering process. The specific process includes:

[0040] (1) Ingredients: CP or AR grade Nb 2 o 5 , CaCO 3 、 Bi 2 o 3 , Y 2 o 3 , La 2 o 3 , MnO 2 、WO 3 etc. as raw materials, press xNb 2 o 5 -yCaO-zBi 2 o 3 The stoichiometric ratio of +αA is accurately weighed;

[0041] (2) Ball mill mixing: use absolute ethanol as the medium, and planetary ball mill for more than 5 hours. discharge drying;

[0042] (3) Synthesis: the powder is packed in a corundum crucible and synthesized at 700-1000°C for 1-4 hours;

[0043] (4) Synthetic material ball milling: the synthetic material is pulverized, passed through a 40-mesh sieve, using absolute ethanol as a medium, and ball milling with a planetary ball mill for 4-6 hours. The output is dry. Molding: powder plus binder, manual granulation, use 2T / cm 2 The pressure is pressed into a disc with a diameter of...

Embodiment 1

[0047] According to the general formula xNb 2 o 5 -yCaO-zBi 2 o 3 +αA. where A represents 1mol x Nb 2 o 5 -yCaO-zBi 2 o 3 For A, doped with αmol, x+y+z=1, the range of values ​​of x, y, and z is shown in the area shown in the phase diagram ( figure 1 ); A is one or more of Y, K, La, W, Mn;

[0048] Take x=0.35, y=0.31, z=0.34, A is W, α=0.01, and use CP or AR grade chemical reagent Nb 2 o 5 , CaCO 3 、 Bi 2 o 3 、WO 3 As the raw material, after fully drying, weigh according to the above formula stoichiometrically;

[0049] Use absolute ethanol as the medium, and mix by ball milling for 3 hours. Dry, sieve, and synthesize the powder in a corundum crucible at 850°C / 2 hours. Then pulverize and sieve, ball mill for 3 hours, dry, add binder, dry press and shape, after plastic discharge, adopt the above-mentioned oxygen-passing sintering method to sinter. Its dielectric constant is about 90 and does not change much with frequency, see image 3 ;The dielectric loss is...

Embodiment 2

[0051] According to the general formula xNb 2 o 5 -yCaO-zBi 2 o 3 +αA, take x=0.31, y=0.27, z=0.42, A is 0.03mol Mn and 0.01mol La, α=0.03+0.01, use CP or AR grade chemical reagent Nb 2 o 5 , CaCO 3 、 Bi 2 o 3 , MnO 2 , La 2 o 3 As the raw material, after fully drying, weigh according to the above formula stoichiometrically;

[0052] Use absolute ethanol as the medium, and mix by ball milling for 5 hours. Dry, sieve, and synthesize the powder in a corundum crucible at 800°C / 3 hours. Then pulverize and sieve, ball mill for 5 hours, dry, add binder, dry press molding, after plastic discharge, use the above-mentioned oxygen-passing sintering method to sinter. Its dielectric constant is around 110; the ceramic presents a very dense microstructure, see figure 2 ; 1.5mm thickness of ceramic pulse resistance up to 20,000 volts.

[0053] The high pressure resistance value of several groups of typical formulations in the ceramic system of the present invention in table 1...

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Abstract

The invention relates to a high-voltage-resistant ceramic material and a preparation method thereof. The high-voltage-resistant Nb2O5-CaO-Bi2O3 ceramic material has the composition general formula of xNb2O5-yCaO-zBi2O3+ alpha A, wherein the sum of x, y and z is 1, x is equal to or greater than 0.2 and less than or equal to 0.7, y is equal to or greater than 0.1 and less than or equal to 0.6, z is equal to or greater than 0.2 and less than or equal to 0.7, the doped A is at least one of Y, K, La, W and Mn and alpha is less than or equal to 0.1.

Description

technical field [0001] The invention relates to a series of doped Nb with high withstand voltage, low dielectric loss and high capacitance temperature stability 2 o 5 -CaO-Bi 2 o 3 The series of ceramic materials can be used in energy storage, signal processing, electronic circuits, detectors, sensors, pulse power and other fields. Background technique [0002] High voltage capacitor materials have important applications in fields such as energy storage, signal processing, electronic circuits, sensors, and pulse power technology. In terms of energy storage, in order to obtain higher energy density, people need materials with high dielectric constant, high voltage breakdown strength and low dielectric loss [1] . Among the common dielectric materials, ceramics usually have high dielectric constant but low breakdown strength, such as typical BaTiO 3 Ferroelectric ceramics have a high dielectric constant (~2000) at room temperature, but their breakdown strength is low (~5k...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/495C04B35/622
Inventor 阮伟李国荣曾江涛郑嘹赢程健阮学政
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI