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Preparation method of copper-doped ZnO nanorods by pulsed laser deposition

A zinc oxide nanorod, pulsed laser deposition technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc. Scope of application, simple raw materials, and the effect of enhancing luminous power

Inactive Publication Date: 2017-01-04
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the problems that existing methods for preparing copper-doped zinc oxide nanorods have many kinds of chemical raw materials, complex reaction process, and easy introduction of impurities, and provides a pulse laser deposition preparation method of copper-doped zinc oxide nanorods

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  • Preparation method of copper-doped ZnO nanorods by pulsed laser deposition
  • Preparation method of copper-doped ZnO nanorods by pulsed laser deposition
  • Preparation method of copper-doped ZnO nanorods by pulsed laser deposition

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specific Embodiment approach 1

[0025] Specific embodiment 1: The pulse laser deposition preparation method of copper-doped zinc oxide nanorods in this embodiment is carried out according to the following steps:

[0026] 1. Preparation of copper-doped zinc oxide ceramic target material: ball mill copper oxide powder with a purity of 99.9% and zinc oxide powder at a ratio of 1:(9-99) for 24 hours, pre-fire at 600-700°C for 4-8 hour, and then pressed under a pressure of 20-30MPa to form a disc with a diameter of 30-50mm and a thickness of 3mm, and then sintered at 1000-1200°C for 4-8 hours to obtain a copper-doped zinc oxide ceramic target;

[0027] 2. Clean the substrate: The substrate is ultrasonically cleaned with acetone for 5 minutes to 20 minutes, ultrasonically cleaned with deionized water for 5 minutes to 20 minutes, and ultrasonically cleaned with methanol for 5 minutes to 20 minutes. 3 cycles, that is, the cleaned substrate is obtained;

[0028] 3. Put the copper-doped zinc oxide ceramic target obta...

specific Embodiment approach 2

[0037] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the sintering is carried out at a temperature of 1050-1150° C. in step 1. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0038] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in step 3, the distance between the substrate and the copper-doped zinc oxide ceramic target is 40-60 mm. Others are the same as those in the first or second embodiment.

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Abstract

The invention discloses a pulsed laser deposition preparation method for a copper-doped zinc oxide nanorod, relates to a deposition method for a gas-sensitive nano material, and aims to solve problems that an existing method for preparing the copper-doped zinc oxide nanorod is various in chemical raw material types, complex in reaction process and likely to introduce impurities. The pulsed laser deposition preparation method comprises the following steps: 1, preparing a copper-doped zinc oxide ceramic target material; 2, performing ablation on the target material through pulsed laser to obtain a seed crystal layer; III, performing laser ablation on the target material for 20-120 minutes to obtain a copper-doped zinc oxide nano structure. According to the pulsed laser deposition preparation method, a pulsed laser deposition method is adopted to prepare the copper-doped zinc oxide nanorod, the used raw materials are simple, only two raw materials are needed, production is performed in a vacuum cavity, sample crystal quality is high, impurities are avoided, and the controllability of the doped component is good. The pulsed laser deposition preparation method belongs to the preparation field of the copper-doped zinc oxide nanorod.

Description

technical field [0001] The invention relates to a method for depositing gas-sensitive nanometer materials. Background technique [0002] Zinc oxide is a traditional gas-sensitive material, which is sensitive to ethanol, NH 3 , NO x And other gases have a good gas sensitive response, and in recent years with the advancement of science and technology and the development of industry, hydrogen sulfide has been widely used in the industrial field, and hydrogen sulfide gas is a poisonous and corrosive gas, exposed to Even a few hours in a very low concentration (<20ppm) of hydrogen sulfide gas will cause serious harm to human body and industrial products. However, pure zinc oxide nanomaterials do not respond well to hydrogen sulfide gas at a lower concentration due to the limitations of the material's physical properties, and require a higher temperature (about 300°C) to respond to hydrogen sulfide gas. This greatly reduces the application value of pure zinc oxide materials ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/08
CPCC23C14/08C23C14/28
Inventor 孙晔刘潇于淼尹永琦杨彬曹文武
Owner HARBIN INST OF TECH
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