A kind of method for preparing INP film material

Abstract

The invention provides a preparation method of an InP thin-film material. The method comprises the following steps: mixing In2O3 and P2O5 serving as starting materials according to a molar ratio, sealing the mixture in a vacuum ampoule, and reacting at the temperature of 500-600 DEG C so as to generate an InPO4 solid material; and then preparing the InP thin-film materials on different substrates such as Si, Ge, stainless steel, conducting glass and conductive ceramics in a vertical gradient condensing thin-film deposition device by using hydrogen, hydrogen-argon mixed gas, activated carbon, hydrocarbon and the like as reducing extraction agents and adopting a high-temperature in situ solid phase extraction reaction vapor deposition method under the condition of relatively low vacuum, wherein the InP thin-film materials are completely controlled in terms of thickness and have high degree of crystallinity, high purity and single phase. The method is suitable for preparation of the InP thin-film materials on a relatively large scale and short in preparation cycle and has strong adaptability to substrate materials; the used raw materials are simple, low in cost and easily available, and all the used raw materials are solid or non-toxic gases and pollution-free to environments; the preparation technology is simple and easy to operate; and the preparation cost of the products is extremely low.

Description

technical field [0001] The invention belongs to the field of preparation of thin film materials, and in particular relates to a method for preparing InP thin film materials. Background technique [0002] The history of commercial production of semiconductor technology can be seen as a history of continuous improvement and update of a series of process technologies. The first commercial transistors were made of germanium (Ge), but silicon (Si) semiconductor devices quickly surpassed it in performance and price as the second commercial semiconductor devices in the early 1960s. The reason why silicon semiconductor can now establish its dominant position in the semiconductor industry is partly due to the continuous development of process technology, which makes silicon devices highly competitive in terms of integrated functionality and price. The third commercial semiconductor technology appeared in the late 1980s. It came from the field of compound materials-gallium arsenide (...

AI Technical Summary

Problems solved by technology

These methods have their own advantages and disadvantages, and the morphology and structure of the prepared InP thin film materials are also different; but one of the common points of these methods is that the preparation process is complicated, the equipment is expensive, the cost is high, the environment is polluted, and the raw materials are gaseous or liquid. And toxic or even highly toxic, with considerable danger

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