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A kind of method for preparing INP film material

A technology of thin film materials and solid materials, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of complex preparation process, large environmental pollution, high cost, etc., and achieve simple preparation process and simple raw materials , easy-to-operate effects

Inactive Publication Date: 2016-02-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These methods have their own advantages and disadvantages, and the morphology and structure of the prepared InP thin film materials are also different; but one of the common points of these methods is that the preparation process is complicated, the equipment is expensive, the cost is high, the environment is polluted, and the raw materials are gaseous or liquid. And toxic or even highly toxic, with considerable danger

Method used

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  • A kind of method for preparing INP film material
  • A kind of method for preparing INP film material
  • A kind of method for preparing INP film material

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Step 1. Accurately weigh In with a ten-thousandth electronic balance 2 o 3 , P 2 o 5 , according to the ratio of molar ratio In:P=1.0:1.0~1.5, mix and grind evenly, add anhydrous ethanol equivalent to 50%~100% of the mass of solid raw materials, grind again carefully, remove the solvent by drying, and use 10~15MPa Press it into a disc with a thickness of 3mm, then seal it in a vacuum ampoule, place the ampoule in the corundum crucible of the reactor, and heat it to 500°C to 600°C in a self-made tube electric furnace. Constant temperature for 2 to 4 hours, natural cooling, that is, InPO 4 solid material;

[0027] Step 2. Break the ampoule, put the InPO 4 The solid material is placed in the reaction zone of the vertical gradient condensation thin film deposition device, and replaced by high-purity nitrogen to the oxygen concentration at the ppm level, and then Ar+H 2 Mixed gas (containing H 2 The volume percentage is 10% to 30%) vacuuming and replacing 1 to 2 times...

Embodiment 2

[0030] Step 1. Accurately weigh In with a ten-thousandth electronic balance 2 o 3 , P 2 o 5, according to the molar ratio In:P=1.0:1.0~2.0, mix and grind evenly, add anhydrous ethanol equivalent to 50%~100% of the solid raw material mass, grind again carefully, dry to remove the solvent, and use 10~15MPa Press it into a disc with a thickness of 3mm, then seal it in a vacuum ampoule, place it in a quartz boat reactor, and heat it to 500°C to 600°C in a self-made tubular electric furnace with a constant temperature of 2 to 4h, naturally cooled to room temperature, to obtain InPO 4 solid material;

[0031] Step 2. Break the ampoule, and InPO 4 The solid material is placed in the reaction zone of the vertical gradient condensation thin film deposition device, and replaced by high-purity nitrogen to the oxygen concentration at the ppm level, and then Ar+H 2 Mixed gas (containing H 2 The volume percentage is 10% to 30%) vacuum replacement 2 to 3 times, the 6 substrates requir...

Embodiment 3

[0034] Accurately weigh In with 1 / 10,000 electronic analytical balance 2 o 3 , P 2 o 5 , activated carbon (Active Carbon), according to the ratio of molar ratio In:P:C=1.0:(1.0~1.2):8.0, mix and grind evenly, add anhydrous ethanol equivalent to 50%~100% of the solid raw material quality, and carefully grind evenly , dry to remove the solvent, and press it into a disc or square piece with a thickness of 1-10mm under a pressure of 10-15MPa; then place it in the reaction zone of a vertical gradient condensation thin-film deposition device, and replace it with high-purity nitrogen by vacuuming it into oxygen The concentration is ppm level, and then use Ar+H 2 Mixed gas (containing H 2 The volume percentage is 10% to 30%) vacuum replacement 1 to 2 times, the 6-layer substrate required for deposition is pre-placed in the designated position in the deposition area of ​​the deposition device after treatment; then vacuumize to about 1mmHg, start heating to The reaction zone is 120...

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Abstract

The invention provides a preparation method of an InP thin-film material. The method comprises the following steps: mixing In2O3 and P2O5 serving as starting materials according to a molar ratio, sealing the mixture in a vacuum ampoule, and reacting at the temperature of 500-600 DEG C so as to generate an InPO4 solid material; and then preparing the InP thin-film materials on different substrates such as Si, Ge, stainless steel, conducting glass and conductive ceramics in a vertical gradient condensing thin-film deposition device by using hydrogen, hydrogen-argon mixed gas, activated carbon, hydrocarbon and the like as reducing extraction agents and adopting a high-temperature in situ solid phase extraction reaction vapor deposition method under the condition of relatively low vacuum, wherein the InP thin-film materials are completely controlled in terms of thickness and have high degree of crystallinity, high purity and single phase. The method is suitable for preparation of the InP thin-film materials on a relatively large scale and short in preparation cycle and has strong adaptability to substrate materials; the used raw materials are simple, low in cost and easily available, and all the used raw materials are solid or non-toxic gases and pollution-free to environments; the preparation technology is simple and easy to operate; and the preparation cost of the products is extremely low.

Description

technical field [0001] The invention belongs to the field of preparation of thin film materials, and in particular relates to a method for preparing InP thin film materials. Background technique [0002] The history of commercial production of semiconductor technology can be seen as a history of continuous improvement and update of a series of process technologies. The first commercial transistors were made of germanium (Ge), but silicon (Si) semiconductor devices quickly surpassed it in performance and price as the second commercial semiconductor devices in the early 1960s. The reason why silicon semiconductor can now establish its dominant position in the semiconductor industry is partly due to the continuous development of process technology, which makes silicon devices highly competitive in terms of integrated functionality and price. The third commercial semiconductor technology appeared in the late 1980s. It came from the field of compound materials-gallium arsenide (...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/30
Inventor 刘兴泉刘一町张铭菊何永成
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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