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A Growth Method for Improving the Crystal Quality of Aluminum Nitride Thin Films Using Temperature Modulation

A thin-film crystal and growth method technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of large consumption of reagents, low lateral growth rate, deposition, etc., to improve crystal quality, and the method is simple and easy Line, the effect of reducing the dislocation density

Active Publication Date: 2017-03-29
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is very difficult to prepare high-quality AlN thin films by heteroepitaxial growth on sapphire substrates. In addition to the large lattice mismatch and thermal mismatch between sapphire and AlN, there are two reasons: (1) Al-N bond can be very strong
The diffusion of Al atoms on the growth surface is limited, the lateral growth rate is very low, and it is difficult to form two-dimensional layered growth; (2) Al source TMA and NH in MOCVD growth 3 There is a strong pre-reaction between them. The pre-reaction will not only consume a large amount of reactants, but also the solid adduct formed may be deposited on the surface of the sample and cannot be fully decomposed, resulting in the doping of impurities in the epitaxial layer, and even causing the epitaxial layer polycrystalline growth

Method used

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  • A Growth Method for Improving the Crystal Quality of Aluminum Nitride Thin Films Using Temperature Modulation

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Experimental program
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Embodiment 1

[0015] A growth method for improving the crystal quality of an aluminum nitride thin film by using temperature modulation, comprising the following steps:

[0016] (1) Use metal-organic chemical vapor deposition (MOCVD) equipment, the substrate is a (0001) surface sapphire substrate 10, and hydrogen gas is introduced as a carrier gas, and the substrate is placed in a metal-organic chemical vapor deposition system and heated at a high temperature of 1050 ℃, high pressure 100Torr heating and baking for 3min, clean the surface of the substrate;

[0017] (2) Introduce hydrogen as a carrier gas, reduce the temperature to 950°C, and the pressure is 50 Torr. Introduce ammonia gas with a flow rate of 300 sccm, and simultaneously inject trimethylaluminum with a flow rate of 100 sccm. Epitaxial growth on the substrate at low temperature Aluminum nitride nucleation layer 20; the thickness of the aluminum nitride nucleation layer is 20nm;

[0018] (3) Introduce hydrogen as a carrier gas,...

Embodiment 2

[0021] A growth method for improving the crystal quality of an aluminum nitride thin film by using temperature modulation, comprising the following steps:

[0022] (1) Use metal-organic chemical vapor deposition (MOCVD) equipment, the substrate is a (0001) sapphire substrate 10, and hydrogen gas is introduced as a carrier gas, and the substrate is placed in a metal-organic chemical vapor deposition system and heated at a high temperature of 1500 ℃, high pressure 150Torr heating and baking for 4min, clean the surface of the substrate;

[0023] (2) Introduce hydrogen as a carrier gas, reduce the temperature to 900°C, and the pressure is 75Torr. Introduce ammonia gas with a flow rate of 600 sccm, and simultaneously inject trimethylaluminum with a flow rate of 125 sccm. Epitaxial growth on the substrate at low temperature Aluminum nitride nucleation layer 20; the thickness of the aluminum nitride nucleation layer is 25nm;

[0024] (3) Introduce hydrogen as a carrier gas, keep the...

Embodiment 3

[0027] A growth method that uses temperature modulation to improve the crystal quality of aluminum nitride films (such as figure 1 shown), including the following steps:

[0028] (1) Metal-organic chemical vapor deposition (MOCVD) equipment is used, the substrate is a (0001) sapphire substrate 10, hydrogen is introduced as a carrier gas, the substrate is placed in a metal-organic chemical vapor deposition system, and heated at a high temperature of 1100 ℃, high pressure 200Torr, heating and baking for 5min to clean the surface of the substrate;

[0029] (2) Introduce hydrogen as a carrier gas, reduce the temperature to 950°C, and the pressure is 100 Torr. Introduce ammonia gas with a flow rate of 1000 sccm, and simultaneously inject trimethylaluminum with a flow rate of 150 sccm. Epitaxial growth on the substrate at low temperature Aluminum nitride nucleation layer 20; the thickness of the aluminum nitride nucleation layer is 30nm;

[0030] (3) Introduce hydrogen as a carrie...

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Abstract

The invention discloses a growth method for improving the crystal quality of an aluminum nitride thin film by temperature modulation. The method of the invention adopts the in-situ temperature modulation technology, modulates the growth temperature in the epitaxial growth process after the growth of the aluminum nitride nucleation layer, and changes the growth rate and stress of the aluminum nitride, so that some dislocations are bent at this time. Finally, merger and annihilation occur, so as to reduce the dislocation density in the aluminum nitride film and improve the crystal quality. The advantages of the invention are: the method of introducing a temperature modulation layer in the process of epitaxial growth of aluminum nitride material is simple and feasible, and the performance of the epitaxial material is good, which is an effective solution for realizing high-quality epitaxial growth of aluminum nitride film.

Description

technical field [0001] The invention relates to a growth method for improving the crystal quality of an aluminum nitride thin film by using temperature modulation, and belongs to the technical field of semiconductors. Background technique [0002] Group III nitrides (including gallium nitride, aluminum nitride, aluminum gallium nitride, indium nitride, indium gallium nitride, indium aluminum gallium nitride, etc.), the band gap can be adjusted between 0.7eV-6.2eV, Covers the entire mid-infrared, visible, and ultraviolet bands. In optoelectronic applications, such as white light diodes (LEDs), blue lasers (LDs), and ultraviolet detectors, they have achieved important applications and developments. Aluminum nitride (AlN) is a direct bandgap semiconductor with a wide bandgap (6.2eV). It is an important ultraviolet light-emitting material and plays an important role in optoelectronic devices such as ultraviolet detectors, ultraviolet light-emitting diodes and ultraviolet lasers...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B25/16C30B29/40
Inventor 李亮罗伟科李忠辉
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD