A method for removing composite mask for high-energy ion implantation

A composite mask and high-energy ion technology, which is applied in the field of masks, can solve the problems of easy residual photoresist mask, many process errors in graphic size, and affecting the blocking effect of thin film masks, so as to avoid device process failure, Avoiding mask residues and shortening the deglue time

Active Publication Date: 2017-06-27
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the hard mask avoids the bombardment denaturation and residual problems of the photoresist mask, it needs to deposit an additional dielectric film, and perform multi-step photolithography and etching, and the process is complex
The reasons why the hard mask is not suitable for HgCdTe devices are: 1) The deposition temperature of the hard mask layer is far beyond the temperature range (below 70°C) that the HgCdTe material can withstand, while the low temperature growth (2 , graphite, amorphous carbon, etc.) have a large lattice mismatch with HgCdTe materials, and the adhesion of the film is poor; 3) the hard mask requires multi-step photolithography and pattern etching, and the introduced pattern size There are many process errors, which makes it difficult to guarantee the pattern accuracy of the small-size implantation area

Method used

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  • A method for removing composite mask for high-energy ion implantation
  • A method for removing composite mask for high-energy ion implantation
  • A method for removing composite mask for high-energy ion implantation

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Using the mask preparation method described in the present invention, evaporation deposition, photolithography and positive and negative angle evaporation deposition are carried out on the surface of the HgCdTe epitaxial material chip. The preparation process is as follows figure 2 shown. First, a ~60nm thick cadmium telluride injection barrier layer was deposited by thermal evaporation on the surface of the HgCdTe epitaxial material chip after annealing treatment and surface corrosion treatment, the chip was cleaned, and a layer of thickness 2-3 microns was spin-coated on the chip surface. Thick positive photoresist, the chip is exposed to UV light with a photolithography plate, and after development and fixing, a photoresist injection mask is obtained.

[0026] Load the chip with the prepared mask pattern on the sample stage of the high vacuum thermal evaporation equipment, first rotate the sample stage at a 0° inclination angle, and deposit a ~20nm thick zinc sulfid...

Embodiment 2

[0030] Using the mask preparation method described in the present invention, evaporation deposition, photolithography and positive and negative angle sputtering deposition are carried out on the surface of the mercury cadmium telluride epitaxial material chip, and the preparation process is as follows figure 2shown. First, a ~20nm thick cadmium telluride injection barrier layer was deposited by thermal evaporation on the surface of the HgCdTe epitaxial material chip after annealing treatment and surface corrosion treatment, the chip was cleaned, and a layer of thickness 2-3 microns was spin-coated on the chip surface. Thick positive photoresist, the chip is exposed to UV light with a photolithography plate, and after development and fixing, a photoresist injection mask is obtained.

[0031] Load the chip with the mask pattern prepared on the sample stage of the magnetron sputtering equipment, first rotate the sample stage at a 0° inclination angle, and sputter a silicon dioxi...

Embodiment 3

[0035] Using the mask preparation method described in the present invention, evaporation deposition, photolithography and positive and negative angle evaporation deposition are carried out on the surface of the HgCdTe epitaxial material chip. The preparation process is as follows figure 2 shown. First, a cadmium telluride injection barrier layer with a thickness of 200 nm is deposited by thermal evaporation on the surface of the HgCdTe epitaxial material chip after annealing treatment and surface corrosion treatment, the chip is cleaned, and a layer of thickness 2-3 μm is spin-coated on the surface of the chip. Thick positive photoresist, the chip is exposed to UV light with a photolithography plate, and after development and fixing, a photoresist injection mask is obtained.

[0036] Load the chip with the prepared mask pattern on the sample stage of the high vacuum thermal evaporation equipment. First, rotate the sample stage at a 0° inclination angle to deposit a ~80nm thic...

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Abstract

The invention discloses a removal method of a composite mark for injecting high-energy particles. The mask is a composite photoresist mask with a three-layer structure; a photoresist mask pattern is manufactured between an injecting resisting layer dielectric film and a surface sacrificing dielectric film through the mask to be used as a high-energy particles injecting mask; two dielectric film etching agents for removing the composite mask are different; when removing the mask, the sacrificing dielectric film, the photoresist mask and the resisting layer dielectric film are sequentially removed. With the adoption of the composite mask, the problem that the photoresist mask is cracked and denatured under the attack of the high-energy particles can be avoided; in addition, the mask can be removed without residue; the cleanness of the surface of a chip is ensured, and the device performances can be improved.

Description

technical field [0001] The invention relates to a mask technology in a microelectronic process, in particular to a high-energy ion implantation composite mask structure removal method for mercury cadmium telluride and the implantation energy greater than 200keV. Background technique [0002] Infrared focal plane array detectors based on mercury cadmium telluride photodiodes have been widely used in military security, resource exploration, ocean monitoring, and space remote sensing. According to the device structure, HgCdTe photodiodes can be divided into n-on-p type and p-on-n type. The n-on-p process has matured after decades of technical accumulation, and the short-wave infrared (SWIR) and mid-wave infrared (MWIR) HgCdTe FPA devices based on this process have achieved high performance. However, for long-wavelength (LW) and very long-wavelength (VLW) devices, in order to obtain the spectral response of the corresponding spectral band, the band gap of the HgCdTe base materi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/265G03F7/42G03F7/20
CPCG03F7/20G03F7/42G03F7/422H01L21/02082H01L21/0272H01L21/0273H01L21/265
Inventor 施长治林春
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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