36results about How to "Shorten the stripping time" patented technology

A dual damascene conductor structure is formed on a substrate with an exposed conductor on top covered by a buried cap, a dielectric layer (DL) and an organic layer (OL). Form a lower via hard mask layers over the OL and form a top trench patterning hard mask over the lower, via hard mask. Form a trench pattern hole through the trench hard mask layer; and form a via pattern hole through the via hard mask layer in a region exposed below the trench pattern hole. Etch a via pattern hole into the OL and then etch a via pattern hole down into the DL. Etch away the trench pattern layer and the OL layer below the trench pattern hole. Etch the via hole through the DL exposing the cap while simultaneously partially etching the DL to a final trench depth to form a trench in the DL below the trench pattern hole, with the trench having a bottom above the cap and sidewalls in the DL.

The invention provides a solder-resistor / character ink stripping technology. The technology comprises the following steps that a 10-16wt% of a stripping agent solution of a solder-resistor / character ink is configured, and a stripping agent comprises 40g / L of NaOH, 10g / L Na2S2O3 and TX-101ml / L; a heater heats a stripping cylinder to 80 to 85 DEG C; a returned printed circuit board rack is placed in the stripping cylinder and immersed for 1 hour; the immersed returned printed circuit board rack is taken out and washed by tap water or brushed by a nylon brush at the room temperature; and drying is carried out for 1 hour at the temperature of 100 DEG C, and a pretreatment process of solder-resist / character ink screen-printing is turned to. The technology is suitable for common FR-4 base materials and halogen-free base materials, ripple exposure is prevented, and copper and golden surfaces are not attacked. According to the technology, complex equipment is not needed, the technology is simple, material resources are wide, the cost is low, the preparation cost is low, the production process is free of pollution, and the technology is suitable for industrial production.

The invention discloses a pneumatic connection rod type rotary cutting mould which comprises an upper mould and a lower mould, wherein the upper mould comprises an upper mould seat, a convex mould fixing plate, a discharge plate and a pressure plate; a nitrogen spring is arranged in the upper mould seat; a rotary cutting concave mould and a guide pin are arranged in the pressure plate; the lower mould comprises a lower mould plate, a lower base plate and a lower mould seat; a rotary cutting convex mould is arranged in the limit grooves arranged on the upper surface of the lower base plate andthe lower end surface of the lower mould plate, and corresponds to the rotary cutting concave mould; the lower part of the rotary cutting convex mould is also provided with a rotary cutting convex mould resetting mechanism; in the convex mould fixing plate, a front driving block, a rear driving block, a left driving block and a right driving block of the rotary cutting convex mould are also arranged in the front, rear, left and right directions of the mould; the four driving blocks cooperate with the outer side of the rotary cutting convex mould; and a pneumatic connection rod mechanism is arranged in a limit groove formed by the upper surface of the pressure plate and the lower end surface of the discharge plate. The pneumatic connection rod type rotary cutting mould disclosed by the invention not only can guarantee the product precision and improve the production efficiency, but also finish all processes in a set of progressive mould, thereby greatly saving the cost and improving the market competitiveness.

The invention discloses a composite mask for high energy ion implantation. The mask of the invention is a composite photoresist mask in a three-layer structure. A photoresist mask pattern is made between an implantation barrier layer dielectric film and a surface sacrifice dielectric film to serve as a high energy ion implantation mask. According to the composite mask of the invention, the problem of chapped degeneration of the photoresist mask under high energy ion bombardment can be solved, the mask can be removed without residual, cleanness of the chip surface can be ensured, and device performance is improved.

The invention provides a hollow blade easy-to-remove aluminum oxide ceramic core and a preparation method thereof. According to the ceramic core, a shell and a space lattice structure in the shell arecombined, and when the relative density of the space lattice structure is 20 to 50 percent and the thickness of the shell is 0.4 to 0.5 mm, high void ratio of the ceramic core is realized and the deflection and the bending resistance of the ceramic core are guaranteed; and according to the preparation method, stable printing is facilitated by high flowability and low viscosity of ceramic slurry,the properties of the ceramic core are improved well by cooperating with the space lattice structure, the ceramic slurry is printed into a needed forming green body by 3D printing equipment, and the formed ceramic core is obtained by degreasing and sintering the formed green body. The ceramic core has high strength and short core removing time, saves ceramic materials, shortens process flow and provides an efficient solution for the problem about removal of the aluminum oxide ceramic core.

The invention discloses a preparation method of a composite mask for high-energy ion implantation. The mask is a composite photoresist mask with a three-layer structure, a photoresist mask figure of the composite mask is made between an implantation barrier layer dielectric film and a surface layer sacrifice dielectric film, and is used for high-energy ion implantation of the mask. The preparation method comprises the steps that the mask figure is formed on the surface of the implantation barrier layer dielectric film through positive photoresist in a photoetching mode, and the surface layer sacrifice dielectric film grows in an injection region, and the side wall and the top end of the photoresist mask through a positive and negative inclination film evaporation technology, and is used for high-energy ion implantation. The composite mask can solve the problem that the photoresist mask chaps and denatures under the high-energy ion bombardment, no residue is left when the mask is removed, the surface cleanliness of a chip is guaranteed, and device performance is improved.

The invention discloses a removal method of a composite mark for injecting high-energy particles. The mask is a composite photoresist mask with a three-layer structure; a photoresist mask pattern is manufactured between an injecting resisting layer dielectric film and a surface sacrificing dielectric film through the mask to be used as a high-energy particles injecting mask; two dielectric film etching agents for removing the composite mask are different; when removing the mask, the sacrificing dielectric film, the photoresist mask and the resisting layer dielectric film are sequentially removed. With the adoption of the composite mask, the problem that the photoresist mask is cracked and denatured under the attack of the high-energy particles can be avoided; in addition, the mask can be removed without residue; the cleanness of the surface of a chip is ensured, and the device performances can be improved.

The invention discloses a continuous preparation and purification device for graphene oxide, which includes a reactor, a concentrated sulfuric acid solution storage bottle and a water / hydrogen peroxide storage bottle connected to the reactor through a delivery pipe, and a three-way valve is arranged on the delivery pipe. Directly below and directly above are correspondingly equipped with an ultrasonic plate, a feeder, a stirring paddle, and a first lifting platform connected to the reactor through a discharge pipe, and the discharge pipe is connected to the filter column through a second conveying pipe provided with a second peristaltic pump. The filter column is connected to the graphene oxide storage bottle through the third conveying pipe provided with the third peristaltic pump; the invention also discloses a preparation method of graphene oxide: the strong acid and the oxidant are separately fed and oxidized with graphite, and then stripped and purification to obtain graphene oxide. The device of the present invention is provided with a concentrated sulfuric acid solution storage bottle, a feeder, a reactor and a filter, and realizes the continuous preparation and purification of graphene oxide; the method of the present invention improves the preparation and purification efficiency of graphene oxide, and realizes concentrated sulfuric acid Solution recovery and continuous utilization.