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PMMA-SnO2-based thin-film gas sensor for detecting methane

A technology of gas sensor and thin film, which is applied in the field of preparation of PMMA-SnO2 based thin film structure, can solve the problems of increased energy consumption, decreased stability, and high working temperature of gas sensor, and achieves low cost, good conductivity, and The effect of stable performance

Inactive Publication Date: 2015-05-20
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] As the most widely used gas sensing material at present, SnO2 has the advantages of heat resistance, corrosion resistance, low material cost and good response to various gases, but there are also shortcomings such as high working temperature and poor selectivity that need to be solved
High working temperature will not only increase the energy consumption of the gas sensor and reduce the stability, but also if the concentration of explosive gas in the use environment is high, the sensor will become an explosion source if the working temperature is too high, causing danger.

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  • PMMA-SnO2-based thin-film gas sensor for detecting methane
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Embodiment Construction

[0029] In order to make the present invention clearer, below in conjunction with specific embodiment, and with reference to appended figure 1 , 2, the present invention is further described in detail.

[0030] It adopts a relatively simple process method, that is, a kind of sol-gel method (sol-gel) in the wet preparation method----spin coating. PMMA dissolved in chloroform is used to increase the adhesion of SnO2 nanocrystals to the substrate and improve the quality of the film; n-butylamine is used to prevent the aggregation of SnO2 nanoparticles and to make the gas to be measured more easily attached to the surface of the film. The viscosity of PMMA will neither cover the quantum dots nor cause the film to fall off from the substrate.

[0031] The substrate on which the thin film is attached can be a silicon wafer with an SiO2 oxide layer, a quartz wafer, a glass wafer, or even a polymer material.

[0032] The solvent of PMMA in the film can be chloroform, anisole, aceton...

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Abstract

The invention discloses a PMMA-SnO2-based thin-film gas sensor taking methane as detected gas. A PMMA-SnO2 film is prepared by the following steps: with an insulated substrate / PMMA-SnO2 film / electrode structure, mixing PMMA, taken as an adhesive, with an organic solvent with SnO2 quantum dots to form a spinning solution, and performing spinning to form the PMMA-SnO2 film, wherein a gas-sensitive material adopted in the film structure refers to SnO2 nanoparticles, and the diameter of the SnO2 nanoparticles is about 20+ / -5nm. The film is high in conductivity, the preparation process is simple, and the cost is low; and moreover, the requirement on an attached substrate is low, and the film only needs to be spun on the insulated substrate. The most noteworthy is that the thin-film sensor still has high responding sensitivity on methane at a low temperature of 50 DEG C.

Description

1. Technical field [0001] The invention relates to a PMMA-SnO2 thin-film gas-sensing device mainly used for detecting methane, in particular to the preparation of a PMMA-SnO2-based thin-film structure exhibiting high detection sensitivity to methane gas at low temperature. 2. Background technology [0002] With the development of economy and society, the consumption of various natural resources is increasing, and the environmental pollution is becoming more and more serious. The frequent occurrence of large-scale smog in China also reminds people of the urgency of environmental governance. At the same time, effective monitoring and disclosure of changes in the concentration of harmful gases in the surrounding environment can also enable people to avoid sudden gas leakage and pollution incidents and protect their health. Therefore, the research and development of ideal gas sensors is one of the important topics of current research. [0003] As the most widely used gas-sensin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
Inventor 余林蔚时荣荣许明坤于忠卫钱晟一薛兆国李成栋王鸿祥
Owner NANJING UNIV
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