High-light-sensitivity photoresist composition taking melamine and anacardol modified phenolic resin as matrix

A technology of phenolic resin and melamine, which is applied in the direction of optics, photomechanical equipment, photoplate making process of pattern surface, etc., can solve the problems of photoresist photosensitive performance decline and affect production efficiency, etc., to improve heat resistance and high photosensitivity Performance, improvement of toughness and heat resistance, effect of photosensitive improvement

Inactive Publication Date: 2015-05-27
SUZHOU RUIHONG ELECTRONIC CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After choosing a phenolic resin with increased molecular weight and softening point temperature, the photosensitive performance of the photoresist will be significantly reduced, and the time required for exposure will be extended, thereby affecting production efficiency

Method used

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  • High-light-sensitivity photoresist composition taking melamine and anacardol modified phenolic resin as matrix
  • High-light-sensitivity photoresist composition taking melamine and anacardol modified phenolic resin as matrix
  • High-light-sensitivity photoresist composition taking melamine and anacardol modified phenolic resin as matrix

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Synthesis of phenolic resin modified with melamine and cardanol: Add 30 g of 38% formaldehyde solution, 36 g of phenol, and 4.2 g of oxalic acid into a three-necked flask equipped with a reflux condensation stirring thermometer device, and stir evenly. After stirring evenly, add 15.6 g of melamine and 22.2 g of cardanol into the three-necked flask, pass nitrogen gas into the flask to remove oxygen, seal it, and stir under reflux for 1.5 hours in an oil bath at 110°C. Open the three-necked flask, then add 3.4g of 25% HCl hydrochloric acid solution, pass nitrogen into the flask to remove oxygen, seal it, reflux and stir, react in an oil bath at 120°C for 12 hours, then lower the temperature and cool down, filter and dry to obtain a modified phenolic resin.

[0033] figure 1 It is the gel chromatogram of the modified phenolic resin, the weight average molecular weight is 12169, the alkali dissolution rate is 152A / S, and the softening point temperature is 169°C.

[0034] T...

Embodiment 2

[0037] Synthesis of phenolic resin modified with melamine and cardanol: Add 30 g of 38% formaldehyde solution, 36 g of phenol, and 4.2 g of oxalic acid into a three-necked flask equipped with a reflux condensation stirring thermometer device, and stir evenly. After stirring evenly, add 14.3g of melamine and 23.9g of cardanol into the three-necked flask, pass nitrogen gas into the flask to remove oxygen, seal it, reflux and stir in an oil bath at 110°C for 1.5 hours. Open the three-necked flask, then add 3.4g of 25% HCl hydrochloric acid solution, pass nitrogen into the flask to remove oxygen, seal it, reflux and stir, react in an oil bath at 120°C for 12 hours, then lower the temperature and cool down, filter and dry to obtain a modified phenolic resin.

[0038] figure 2 It is the gel chromatogram of the modified phenolic resin, the weight average molecular weight is 9158, the alkali dissolution rate is 200A / S, and the softening point temperature is 167°C.

[0039] The prepa...

Embodiment 3

[0042] Synthesis of Phenolic Resin Modified with Melamine and Cardanol: Stirring Thermometer Equipped with Reflux Condensation

[0043]Add 30g of 38% formaldehyde solution, 36g of phenol, and 4.2g of oxalic acid into the three-necked flask of the device, and stir evenly. After stirring evenly, add 16.2g of melamine and 21.3g of cardanol into the three-necked flask, pass nitrogen into the flask to remove oxygen, seal it, and stir under reflux for 1.5 hours in an oil bath at 110°C. Open the three-necked flask, then add 3.4g of 25% HCl hydrochloric acid solution, pass nitrogen into the flask to remove oxygen, seal it, reflux and stir, react in an oil bath at 120°C for 12 hours, cool down, filter and dry to obtain a modified phenolic resin.

[0044] image 3 It is the gel chromatogram of the modified phenolic resin, the weight average molecular weight is 7067, the alkali dissolution rate is 352A / S, and the softening point temperature is 162°C.

[0045] The preparation of the pho...

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Abstract

The invention discloses a high-light-sensitivity photoresist composition taking melamine and anacardol modified phenolic resin as a matrix, belongs to the field of macromolecule material photoetching techniques, for overcoming the defect of insufficient thermal resistance of glue film etched by the existing plasma dry method, and improving the light exposure efficiency by intensifying the light sensitivity. The high-light-sensitivity photoresist composition is formed by blending the phenolic resin obtained by the modification of melamine and anacardol, a light sensitive agent, a sensitizer, an additive and a solvent at certain ratio. The preparation method is simple; the system compatibility is relatively good; the toughness and thermal resistance of the phenolic resin are improved by the advantages of modification of melamine and anacardol, and the light sensitive performance is improved by adding a certain proportion of a chemical sensitizer, so that the favorable thermal resistance and high light sensitive performance of the type of ultraviolet positive photoresist are improved, and the application field of the photoresist is widened.

Description

technical field [0001] The invention relates to the field of polymer materials, in particular to a method for preparing a high-sensitivity photoresist composition based on melamine and cardanol-modified phenolic resin. Background technique [0002] Photoresist (also known as photoresist) has photochemical sensitivity, which can be used to carry out photochemical reaction, and the photoresist is coated on semiconductors, conductors and insulators, and the part left after exposure and development is sensitive to the bottom layer. It plays a protective role, and then the required fine pattern can be transferred from the mask plate to the substrate to be processed by etching with an etchant agent. [0003] Since the Delphenol hydroxyl group and methylene group on the phenolic resin structure are easily oxidized, the mechanical strength and heat resistance of the phenolic resin product are reduced, so once the photoresist made of pure phenolic resin is etched by plasma dry method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039G03F7/028G03F7/00C08G8/28C08G8/10
Inventor 季昌彬
Owner SUZHOU RUIHONG ELECTRONIC CHEM CO LTD
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