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Semiconductor device

A technology of semiconductor and oxide semiconductor, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve the problem of high contact resistance, achieve the effect of suppressing the reduction of adhesion and improving the yield

Active Publication Date: 2017-05-17
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In an oxide semiconductor TFT, if an aluminum (Al) layer or a copper (Cu) layer is used to form the source and drain electrodes, there is a problem that the contact resistance becomes high between the Al layer or Cu layer and the oxide semiconductor layer

Method used

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  • Semiconductor device
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Effect test

no. 1 approach

[0043]Hereinafter, a first embodiment of the semiconductor device of the present invention will be described with reference to the drawings. The semiconductor device of this embodiment includes an oxide semiconductor TFT. In addition, the semiconductor device according to the present embodiment only needs to include an oxide semiconductor TFT, and broadly includes active matrix substrates, various display devices, electronic equipment, and the like.

[0044] figure 1 It is a schematic cross-sectional view of the oxide semiconductor TFT 101 of this embodiment.

[0045] The oxide semiconductor TFT 101 includes: a gate electrode 3 supported on a substrate 1; a gate insulating layer 4 covering the gate electrode 3; semiconductor layer 5 ; and source electrode 7 and drain electrode 9 . The oxide semiconductor layer 5 has a channel region 5c, and source contact regions 5s and drain electrode contact regions 5d located on both sides of the channel region. The source electrode 7 i...

no. 2 approach

[0112] In the oxide semiconductor TFT of this embodiment mode, the layers located on the side of the oxide semiconductor layer among the lower and upper layers of the source and drain electrodes further have another metal nitride layer between the metal layer and the oxide semiconductor layer. In terms of the above-mentioned oxide semiconductor TFT 101 ( figure 1 )different.

[0113] Figure 6 It is a cross-sectional view illustrating an oxide semiconductor TFT 102 according to the second embodiment of the present invention.

[0114] The lower layers 7 c and 9 c of the source and drain electrodes of the oxide semiconductor TFT 102 of this embodiment further include a TiN layer on the side opposite to the main layers 7 a and 9 a of the Ti layer. Therefore, the lower layers 7c, 9c are laminated films including a TiN layer, a Ti layer, and a TiN layer in this order from the main layer 7a, 9a side. That is, it has a three-layer structure of TiN / Ti / TiN. In this example, the TiN...

no. 3 approach

[0124] The upper layer of the source and drain electrodes of the oxide semiconductor TFT of this embodiment further has another metal nitride layer between the metal film and the first protective layer, and in this respect is different from the above-mentioned oxide semiconductor TFT 101 ( figure 1 )different.

[0125] Figure 7 It is a cross-sectional view of an oxide semiconductor TFT 103 according to a third embodiment of the present invention.

[0126] The upper layers 7 b and 9 b of the source electrode and the drain electrode of the oxide semiconductor TFT 103 of this embodiment further include a TiN layer on the side of the Ti layer opposite to the main layers 7 a and 9 a. Therefore, the upper layers 7b, 9b are laminated films including a TiN layer, a Ti layer, and a TiN layer in this order from the main layer 7a, 9a side. That is, it has a three-layer structure of TiN / Ti / TiN. In this example, the uppermost TiN layer of the upper layers 7 b , 9 b is in contact with t...

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Abstract

The semiconductor device (201) includes a thin film transistor (101) having an oxide semiconductor layer (5), and the source electrode (7) and the drain electrode (9) of the thin film transistor (101) respectively have: a main layer containing a first metal (7a, 9a); the lower layer (7c, 9c), which is disposed on the substrate side of the main layer, and sequentially includes a lower metal nitride layer made of a second metal nitride and a lower layer made of a second metal from the main layer side metal layer; and an upper layer (7b, 9b), which is arranged on the side opposite to the substrate of the main layer, and sequentially includes an upper metal nitride layer made of a nitride of a second metal and an upper metal nitride layer made of a second metal nitride from the side of the main layer. For the upper metal layer, the first metal is aluminum or copper, and the second metal is titanium or molybdenum.

Description

technical field [0001] The present invention relates to a semiconductor device formed using an oxide semiconductor. Background technique [0002] In an active matrix substrate used in a liquid crystal display device or the like, a switching element such as a thin film transistor (Thin Film Transistor, hereinafter referred to as "TFT") is formed for each pixel. As such a switching element, a TFT having an amorphous silicon film as an active layer (hereinafter referred to as "amorphous silicon TFT") and a TFT having a polysilicon film as an active layer (hereinafter referred to as "polysilicon TFT") have been widely used. . [0003] In recent years, a technique of using an oxide semiconductor instead of amorphous silicon and polysilicon has been proposed as a material for an active layer of a TFT. Such a TFT is called an "oxide semiconductor TFT". Since oxide semiconductors have higher mobility than amorphous silicon, oxide semiconductor TFTs can operate at higher speeds th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786G02F1/1368H01L21/28H01L21/336
CPCG02F1/13458G02F1/136227G02F1/1368H01L27/1225H01L27/124H01L29/45H01L29/7869H01L29/24H01L29/78606
Inventor 美崎克纪
Owner SHARP KK
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