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A kind of preparation method of ag-sio2-ag nanosphere array

A technology of ag-sio2-ag and nanospheres, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve the difficulty of uniform dispersion of core-shell nanoparticles, SiO2 difficulties, and weak substrate bonding, etc. problem, achieve the effect of enhancing sensitivity and improving light permeability

Inactive Publication Date: 2017-06-06
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing method is to use "wet-methods" to synthesize SiO on the surface of metal nanoparticles. 2 Thin film, this method prepares SiO with uniform thickness and controllable thickness, but synthesizes less than 5 nanometers 2 still difficult
At the same time, the synthesized core-shell nanoparticles are difficult to disperse uniformly on the solid substrate, and the combination with the substrate is not strong

Method used

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  • A kind of preparation method of ag-sio2-ag nanosphere array
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  • A kind of preparation method of ag-sio2-ag nanosphere array

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preparation example Construction

[0032] Such as figure 1 As shown, it is a kind of Ag-SiO in the embodiment of the present invention 2 -A flow chart of the preparation method of the Ag nanosphere array, the method comprising:

[0033] 101. Thermally evaporate a layer of silver thin film on the surface of the single crystal silicon sample silicon wafer;

[0034] 102. Put the monocrystalline silicon sample into the chemical vapor deposition reaction chamber and heat it to the preset temperature, so that the silver film can be dehumidified by solid state to form silver nanoparticles;

[0035] 103. Passing reaction gas silane at the preset temperature, so that a layer of extremely thin silicon nanofilm is uniformly deposited on the surface of silver nanoparticles, and an Ag-Si core-shell nanosphere array structure is obtained;

[0036] 104. Take out the single crystal silicon sample and heat it in an oxygen atmosphere to oxidize the Si nanoshell into SiO 2 ;

[0037] 105. Reheat vapor-deposit a silver film wi...

Embodiment 1

[0057] This example provides a method for preparing a surface Raman-enhanced active substrate based on chemical vapor deposition. The preparation process is as follows figure 2 As shown, (a) a layer of Ag thin film is thermally evaporated on a smooth silicon substrate, (b) heated and annealed in the CVD reaction chamber to form Ag nanoparticles on the surface of the silicon substrate, (c) the reaction chamber is introduced into the reaction chamber gas to obtain the Ag-Si core-shell nanosphere array, (d) take the sample out and heat it in an oxygen atmosphere to obtain the Ag-SiO 2 Core-shell nanosphere array, (e) thermally evaporated a layer of Ag thin film to obtain Ag-SiO 2 -SERS substrate of Ag core-shell nanosphere array, (f) The substance to be detected is adsorbed on the SERS substrate for Raman detection.

[0058] The technical solution of the present invention will be further described below.

[0059] Pretreatment: Ultrasonic cleaning of 2.5cm×5cm silicon wafers ac...

Embodiment 2

[0066] This example provides a method for preparing a surface Raman-enhanced active substrate based on chemical vapor deposition. The preparation process is as follows figure 2 As shown, (a) a layer of Ag thin film is thermally evaporated on a smooth silicon substrate, (b) heated and annealed in the CVD reaction chamber to form Ag nanoparticles on the surface of the silicon substrate, (c) the reaction chamber is introduced into the reaction chamber gas to obtain Ag-Si core-shell nanosphere arrays, (d) take out the sample and place it in clean air for heating and oxidation to obtain Ag-SiO 2 Core-shell nanosphere array, (e) thermally evaporated a layer of Au film to obtain Ag-SiO 2 - The SERS substrate of the Au core-shell nanosphere array, (f) the substance to be detected is adsorbed on the SERS substrate for Raman detection.

[0067] The technical solution of the present invention will be further described below.

[0068] Pretreatment: Ultrasonic cleaning of 2.5cm×5cm sili...

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Abstract

The invention provides a preparation method of an Ag-SiO2-Ag nanosphere array. The method comprises the following steps: forming a layer of Ag thin film on the surface of a monocrystalline silicon sample wafer by virtue of thermal vacuum evaporation; putting the monocrystalline silicon sample into a chemical vapor deposition reaction chamber for heating to a preset temperature, so that the Ag thin film is dehumidified in a solid state and formed into Ag nanoparticles; introducing a reactant gas silane at the preset temperature so that a layer of extremely thin silicon nano-film can be evenly deposited on the surface of the Ag nanoparticles, thereby obtaining an Ag-Si core-shell nanosphere array structure; next, taking out the monocrystalline silicon sample and putting into an oxygen atmosphere for heating so that the Si nano-shell can be oxidized into SiO2; further performing thermal vacuum evaporation to form an Ag thin film with a preset thickness on the surface of the sample, thereby forming the Ag-SiO2-Ag core-shell nanosphere array structure which can be taken as a surface-enhanced Raman scattering (SERS) substrate. The invention aims at providing a technical scheme of the preparation method of the Ag-SiO2-Ag nanosphere array having the SERS effect.

Description

technical field [0001] The invention relates to the field of preparation of nanomaterials and the application field of Raman spectrum detection, in particular to a kind of Ag-SiO 2 -A preparation method of an Ag nanosphere array. Background technique [0002] Raman scattering spectroscopy is a powerful molecular detection technique due to its specificity for molecular and chemical bond vibrational peaks. Surface-enhanced Raman scattering (SERS) is widely used in surface research, biosurface science, food safety and other fields because of its high sensitivity, rapid detection, and the ability to obtain structural information that is not easily obtained by conventional Raman spectroscopy. The SERS effect mainly exists in the gaps between metal nanostructures, that is, "hot spots". Due to the metal surface plasmon resonance effect, the electromagnetic field near the "hot spots" is greatly enhanced. Recent studies have shown that "hot spots" greatly enhance the SERS signal, h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/00
Inventor 张璋刘利伟高兴森
Owner SOUTH CHINA NORMAL UNIVERSITY
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