A preparation method of a triple-junction GAAS solar cell with a roughened surface structure

Abstract

The invention relates to the technical field of preparation of multi-node solar cells, in particular to a three-node GaAs solar cell with a surface roughening structure and a preparation method thereof. An AlGaInP roughening layer between main electrodes is roughened, and an antireflection film is manufactured on the surface of the roughened AlGaInP roughening layer. The cell of an inverted structure is adopted, the open-circuit voltage of the solar cell is improved, the efficiency of the cell can reach 31.5-32 percent, a roughening graph is manufactured on an illuminated face of the cell, and the whole structure is made to be a current vertical structure through a conductive Si substrate and the electrode, can be directly applied to the current mature packaging technology on the basis of keeping vertical conduction, and is suitable for assemblies of different shapes. The three-node GaAs solar cell with the surface roughening structure and the preparation method thereof improve the short-circuit current density of the whole cell, and the short-circuit current density Jsc can reach 17.5 mA / cm<2>.

Description

technical field [0001] The invention relates to a multi-junction solar cell preparation technology, and belongs to the technical field of semiconductor material production. Background technique [0002] Due to the good performance of gallium arsenide and its base system of various materials, and the multi-junction stacked solar cell structure has basically achieved full-spectrum absorption, its photoelectric conversion efficiency is always far ahead of other solar cells. This advantage, coupled with the excellent radiation resistance and high temperature resistance of the battery, further improves the reliability and service life of the battery in space applications, and has increasingly become an alternative to high-efficiency silicon solar cells and single-junction gallium arsenide solar cells. Trend, become the main force of aerospace vehicle space power supply. Since 2002, most foreign space vehicles have used triple-junction gallium arsenide solar cells as the main spa...

AI Technical Summary

Problems solved by technology

But in practice, the top cell current density is only 17 mA / cm 2 , it can be seen that the current density of the top cell is the bottleneck restricting the current of the entire cell

At present, the general method to increase the current density of the battery is to evaporate the anti-reflection film, but the triple-junction GaAs solar cell is very sensitive to the thickness and refractive index of the anti-reflection film, and the slight change of the film will cause obvious changes in the performance of the battery. It is very unfavorable for the stability and pass rate of mass production

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