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Ultraviolet photosensitive sensor based on zinc oxide and preparation method of ultraviolet photosensitive sensor

An ultraviolet light and sensor technology, applied in the field of sensors, can solve the problems of high equipment requirements, high equipment requirements, complex preparation process, etc., and achieve the effects of simple process equipment requirements, easy industrial production, and simple preparation process.

Active Publication Date: 2015-07-15
NEWNAGY TANGSHAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conventional methods of growing zinc oxide nanowires, such as hydrothermal growth and vapor deposition, require certain growth conditions, such as temperature, equipment, etc., first use electrospinning to prepare a seed layer and then use the seed layer to grow zinc oxide nanowires, First of all, the zinc oxide film obtained by electrospinning needs to be calcined at high temperature, which requires high equipment and limits the use of substrate materials.
The preparation process of the above-mentioned ultraviolet photosensitive sensor has the disadvantages of complex preparation process, high equipment requirements, poor product consistency, and not suitable for large-scale production

Method used

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  • Ultraviolet photosensitive sensor based on zinc oxide and preparation method of ultraviolet photosensitive sensor
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Experimental program
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Effect test

no. 1 Embodiment approach

[0057] An ultraviolet photosensitive sensor based on zinc oxide comprises a substrate, an interdigital electrode, a viscous conductive fiber film and a zinc oxide film which are sequentially stacked.

[0058] figure 1 It is a structural schematic diagram of the ultraviolet photosensitive sensor of the present invention. Such as figure 1 As shown, the ultraviolet photosensitive sensor of the present invention includes: a substrate 1 , an interdigital electrode 2 , a viscous conductive fiber film 3 , and a zinc oxide film 4 .

[0059] Wherein, the material of substrate 1 is any one in glass, silicon chip, acrylic, polyethylene terephthalate, polyimide, polyvinyl chloride, polypropylene, polyethylene, because the ultraviolet photosensitive sensor of the present invention does not It is necessary to grow zinc oxide, so the growth environment such as high temperature and solution in the preparation process is avoided, so the selection range of substrate materials is wider, and th...

Embodiment 1

[0090] The size of the ultraviolet photosensitive sensor obtained in this embodiment is 0.5 cm×0.5 cm, and the thickness of the zinc oxide film is 200 μm.

[0091] (1) Preparation of interdigitated electrodes

[0092] Using gold foil as a target, interdigitated electrodes were deposited on a glass plate by magnetron sputtering, and the thickness of the electrodes was about 2 μm.

[0093] (2) Electrospinning solution for configuring viscous conductive fiber membrane

[0094] 0.15g of PVDF (molecular weight 1.1M) was dissolved in 0.85g / 0.5g of DMF / acetone (acetone) mixed solvent, and mechanically stirred to prepare a polymer colloid solution;

[0095] Disperse 0.165 g of conductive polyaniline in the above polymer colloid solution, and mechanically stir to prepare an electrospinning solution for a viscous conductive fiber film, wherein the content of conductive polyaniline in the electrospinning solution is 10 wt %;

[0096] (3) Electrospinning

[0097] Add the electrospinnin...

Embodiment 2

[0108] The size of the ultraviolet photosensitive sensor obtained in this embodiment is 0.5 cm×0.5 cm, and the thickness of the zinc oxide film is 200 μm-500 μm.

[0109] (1) Preparation of interdigitated electrodes

[0110] Using gold foil as the target, interdigitated electrodes were deposited on the glass plate by magnetron sputtering, and the electrode thickness was about 2 μm.

[0111] (2) Electrospinning solution for configuring viscous conductive fiber membrane

[0112] 0.15g of PVDF (molecular weight 1.1M) was dissolved in 0.85g / 0.5g of DMF / acetone (acetone) mixed solvent, and mechanically stirred to prepare a polymer colloid solution;

[0113] Disperse 0.16g of conductive graphene in the above-mentioned polymer colloid solution, and mechanically stir to prepare an electrospinning solution for a viscous conductive fiber film, wherein the content of conductive graphene in the electrospinning solution is 10wt%;

[0114] (3) Electrospinning

[0115] Add the electrospin...

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Abstract

The invention provides an ultraviolet photosensitive sensor based on zinc oxide. The ultraviolet photosensitive sensor comprises a base, an interdigital electrode, a stickiness conducting fibrous membrane and a zinc oxide membrane which are successively arranged in a stacked manner, wherein two groups of electrodes of the interdigital electrode are not conducted, and a signal output terminal of the ultraviolet photosensitive sensor is formed; the stickiness conducting fibrous membrane is arranged on the surface of one side of the interdigital electrode and used for adhering the zinc oxide membrane; the zinc oxide membrane is arranged on the surface of one side of the stickiness conducting fibrous membrane and used for sensing ultraviolet rays. The invention further provides a preparation method of the ultraviolet photosensitive sensor based on the zinc oxide. The ultraviolet photosensitive sensor provided by the invention is stable in performance, besides, the preparation technology of the ultraviolet photosensitive sensor is simplified, and the ultraviolet photosensitive sensor has the characteristics of high sensitivity, short response time and simple preparation technology.

Description

technical field [0001] The invention relates to the field of sensors, in particular to a zinc oxide-based ultraviolet photosensitive sensor and a preparation method thereof. Background technique [0002] As a semiconductor material, zinc oxide nanowires can be applied to ultraviolet photosensitive sensors. When ultraviolet light is irradiated on zinc oxide nanowires, the resistance of zinc oxide nanowires will change, thereby changing its output current. In order to improve the sensitivity of the sensor, the existing ultraviolet photosensitive sensor pays more attention to improving the preparation method of zinc oxide nanowires. The application number 201010508591.5 discloses a semiconductor ultraviolet detection sensor and its preparation method. Nano-zinc oxide is grown by deposition method or liquid-phase chemical method to prepare semiconductor ultraviolet light detector. Application number 200910061566.4 discloses a zinc oxide nano-ultraviolet photosensitive sensor and...

Claims

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Application Information

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IPC IPC(8): H01L31/09G01J1/42H01L31/0224H01L31/18H01L31/0203
CPCG01J1/42H01L31/0203H01L31/0216H01L31/0224H01L31/09H01L31/18Y02P70/50
Inventor 叶柏盈王雪王洪吉
Owner NEWNAGY TANGSHAN