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Titanium oxide/tungsten oxide nanocomposite film on metal titanium surface and its preparation and application

A nanocomposite and metal titanium technology, applied in the field of inorganic nanomaterials, can solve the problems of complex process, poor bonding force between the film layer and the substrate, and difficulty in amplification, and achieve high purity, good electron transport, and good photocatalysis.

Active Publication Date: 2017-05-24
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This manual method is difficult to scale up, the bonding force between the film layer and the substrate is poor, and the TiO 2 and WO 3 The interface resistance between
Therefore, it can be seen that some methods currently used to prepare titanium oxide and tungsten oxide composite thin film electrodes have shortcomings such as complex process, harsh conditions, difficulty in scaling up, and poor bonding between the film layer and the substrate.

Method used

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  • Titanium oxide/tungsten oxide nanocomposite film on metal titanium surface and its preparation and application
  • Titanium oxide/tungsten oxide nanocomposite film on metal titanium surface and its preparation and application

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Experimental program
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Effect test

Embodiment 1

[0024] The preparation method of the titanium oxide / tungsten oxide nanocomposite film on the surface of metal titanium comprises the following steps:

[0025] (1) Cut the pre-polished and cleaned titanium metal sheet into a size of 4cm×4cm, etch it with hydrofluoric acid / nitric acid, take it out, wash it with deionized water and dry it in the air. (2) Immerse the clean metal titanium sheet in a closed reactor containing 50 ml of oxidizing solution of 1% peroxytungstic acid and 5% hydrogen peroxide, and keep it in an oven at 80° C. for 12 hours. (3) After taking out the oxidized metal titanium sheet, washing and drying, in a pure oxygen atmosphere, the temperature was raised to 500°C at 1°C / min and baked for 12 hours to prepare a titanium oxide / tungsten oxide nanocomposite film. SEM images of the film surface are shown in figure 1 , the nanostructure of the oxide can be clearly distinguished as a flower-like structure assembled by nanoribbons. Among them, titanium oxide is ma...

Embodiment 2

[0027] The preparation method of the titanium oxide / tungsten oxide nanocomposite film on the surface of metal titanium comprises the following steps:

[0028] (1) Cut the pre-polished and cleaned titanium sheet into a size of 2cm×2cm, etch it with hydrofluoric acid / nitric acid, take it out, wash it with deionized water and dry it in the air. (2) Immerse the clean metal titanium sheet in a closed reactor containing 20 ml of 0.5% peroxytungstic acid and 5% hydrogen peroxide oxidation solution, (3) keep it in an oven at 80°C for 72 hours. The titanium oxide / tungsten oxide nanocomposite film can be prepared by taking out the oxidized metal titanium sheet, washing and drying it, and then heating it up to 600°C at a rate of 5°C / min for 2 hours in an air atmosphere. figure 2 It is the Raman spectrum of the film surface, which can distinguish the anatase TiO 2 and hex WO 3 characteristic Raman peaks.

Embodiment 3

[0030] The preparation method of the titanium oxide / tungsten oxide nanocomposite film on the surface of metal titanium comprises the following steps:

[0031](1) Cut the pre-polished and cleaned titanium metal sheet into a size of 1cm×1cm, etch it with hydrofluoric acid / nitric acid, take it out, wash it with deionized water and dry it in the air. (2) Immerse the clean metal titanium sheet in a closed reactor containing 10 milliliters of 5% peroxytungstic acid and 1% hydrogen peroxide oxidation solution, and keep it in an oven at 100° C. for 12 hours. (3) After taking out the surface oxidized titanium metal sheet, washing and drying, in an oxygen atmosphere, the temperature was raised to 400°C at 0.5°C / min and baked for 3 hours to prepare a titanium oxide / tungsten oxide nanocomposite film.

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Abstract

The invention relates to a titanium oxide / tungsten oxide nano-composite film on the surface of metallic titanium, preparation and an application. The metallic titanium is cleaned and etched, then the metallic titanium is impregnated in an oxidation liquid containing peroxotungstic acid sol and hydrogen peroxide and is kept for a period of time at a certain temperature, a titanic acid and peroxotungstic acid containing nano-film formed through crystal in-situ growth and deposition is obtained, and finally, the titanium oxide / tungsten oxide nano-composite film on the surface of the metallic titanium is obtained through calcination; the film mainly comprises a titanium dioxide and tungsten trioxide compound with a nanobelt structure, the nanobelt width is in a range from 10 nm to 150 nm, and the length is in a range from 0.5 mu m to 20 mu m; the mass percentage of titanium oxide is in a range from 1% to 99.5%, and titanium oxide mainly adopts a rutile or anatase crystalline phase; the mass percentage of tungsten oxide is in a range from 0.5%-99%, and tungsten oxide mainly adopts a hexagonal or monoclinic crystal phase. Compared with the prior art, the preparation is simple and easy and is suitable for large-scale industrial production; the prepared titanic oxide film has important application value in the related fields of photoelectrocatalysis, metal corrosion prevention, electrochemical sensing and the like.

Description

technical field [0001] The invention relates to a titanium oxide / tungsten oxide nanocomposite film on the surface of metal titanium, its preparation and application, and belongs to the field of inorganic nanometer materials. Background technique [0002] Typical semiconductor metal oxides such as titanium dioxide and tungsten trioxide have the advantages of cheap and easy to obtain, non-toxic and harmless, stable biological and chemical properties, and resistance to light corrosion, and have become the most widely studied and applied metal oxides. Titanium dioxide nanostructures have strong photocatalytic activity. When photons with energy greater than or equal to the forbidden band energy between the valence band and the conduction band enter the semiconductor, the valence band electrons will be excited and transition from the valence band to the conduction band, forming Photogenerated electron-hole pairs. Holes with strong oxidizing ability can oxidize water to form hydro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/30
Inventor 龙明策谭北慧
Owner SHANGHAI JIAOTONG UNIV