Method for making microcircuit through using laser direct writing
A laser direct writing and microcircuit technology, applied in the field of microelectronics, can solve the problems of discontinuous morphology, inability to prepare submicron-scale interconnection wires, and inability to complete interconnection, etc., achieving simple and convenient preparation, high yield and low cost. low effect
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Embodiment 1
[0034] Step 1): Select the cover glass as the substrate, clean the substrate with a conventional semiconductor cleaning process, dry it with dry gas after cleaning, dry it in a vacuum oven at 120°C-200°C, and cool it to room temperature after taking out;
[0035] Step 2): Depositing Ge on the cover glass substrate 1 treated as above by radio frequency magnetron sputtering 2 Bi 0.7 Sb 1.3 Te 5 Thin films, deposition conditions: background pressure 1×10 -5 Pa, sputtering power 50W, Ar flow rate 25sccm, deposition pressure 0.1Pa, substrate temperature at room temperature, deposition time 250s, the thickness of GSBT film is 60nm.
[0036] Step 3): Write the sample directly on a part of the film sample with a laser. When using a laser with an appropriate energy density (1.26J / cm in this case) 2 ) direct writing to irradiate the sample, where laser direct writing and laser irradiation are the same concept, and a phase change will occur on the irradiated surface. The sample wa...
Embodiment 2
[0038] Step 1): Select SiO 2As the substrate, the substrate is cleaned by a conventional semiconductor cleaning process, dried with dry gas after cleaning, dried in a vacuum oven at a temperature of 120°C-200°C, cooled to room temperature, and taken out;
[0039] Step 2): Depositing Ge on the cover glass substrate 1 treated as above by radio frequency magnetron sputtering 2 Bi 0.5 Sb 1.5 Te 5 Thin films, deposition conditions: background pressure 1×10 -5 Pa, sputtering power 30W, Ar flow rate 25sccm, deposition pressure 0.1Pa, substrate temperature at room temperature, deposition time 300s, the thickness of the GSBT film is 80nm.
[0040] Step 3): Write directly on a part of the film sample with a laser. When using a laser with an appropriate energy density (0.3-3J / cm in this case 2 Between ) when a sample is irradiated, a phase transition occurs on the irradiated surface. The sample was in an amorphous state before irradiation, but the part irradiated by the laser ligh...
Embodiment 3
[0042] Step 1): Select a single crystal Si wafer as the substrate, clean the substrate with a conventional semiconductor cleaning process, dry it with a dry gas, dry it in a vacuum oven at a temperature of 120°C-200°C, and cool it to Take out after room temperature;
[0043] Step 2): Depositing Ge by radio frequency magnetron sputtering on the Si sheet substrate 1 treated as above 2 Bi 0.3 Sb 1.7 Te 5 Thin films, deposition conditions: background pressure 1×10 -5 Pa, sputtering power 40W, Ar flow rate 25sccm, deposition pressure 0.1Pa, substrate temperature at room temperature, deposition time 200s, the thickness of the GST film is 50nm.
[0044] Step 3): Write directly on a part of the film sample with a laser. When using a laser with an appropriate energy density (1.5J / cm in this case) 2 ) irradiates a sample, a phase transition occurs on the irradiated surface. The sample was in an amorphous state before irradiation, but the part irradiated by the laser light was tra...
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