Micro-electronic surface dust-proof and scale prevention coating and preparation method of micro-electronic surface dust-proof and scale prevention coating

An antifouling coating, microelectronics technology, applied in coatings, antifouling/underwater coatings, paints containing biocides, etc. Easy to clean, easy to operate, flexible and breathable

Inactive Publication Date: 2015-09-02
SUZHOU BEC BIOLOGICAL TECH
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] During the use of microelectronic devices, due to dust and other reasons in the environment, dirt is easily generated on the surface of the device, which affects the use of the device and shortens its service life.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A dust-proof and anti-scaling coating on the surface of microelectronics, which is mainly made of the following raw materials in proportions by weight: 13 parts of quartz sand, 15 parts of petroleum coke, 10 parts of wood chips, 11 parts of sodium chloride, 1 part of nano-titanium dioxide, 8 parts of trisodium phosphate, 13 parts of sodium sulfonate, 11 parts of ethanol, and 25 parts of water.

[0023] A method for preparing a dust-proof and anti-scaling coating on a microelectronic surface, comprising the following steps:

[0024] (1) Grind quartz sand, petroleum coke and sawdust into powder, and the particle size of the powder is 500 mesh;

[0025] (2) Put the powder, sodium chloride powder, trisodium phosphate powder, and sodium sulfonate powder obtained in step (1) into a high-temperature resistance furnace, heat with radiation, and maintain the temperature at 1100°C for 1 hour;

[0026] (3) The powder after high temperature smelting in step (2) is mixed with nano-...

Embodiment 2

[0028] A dust-proof and anti-scaling coating on the surface of microelectronics, which is mainly made of the following raw materials in proportions by weight: 34 parts of quartz sand, 40 parts of petroleum coke, 22 parts of wood chips, 18 parts of sodium chloride, 6 parts of nano-titanium dioxide, 14 parts of trisodium phosphate, 26 parts of sodium sulfonate, 22 parts of ethanol, and 50 parts of water.

[0029] A method for preparing a dust-proof and anti-scaling coating on a microelectronic surface, comprising the following steps:

[0030] (1) Grind quartz sand, petroleum coke and wood chips into powder, and the particle size of the powder is 600 mesh;

[0031] (2) Put the powder, sodium chloride powder, trisodium phosphate powder, and sodium sulfonate powder obtained in step (1) into a high-temperature resistance furnace, heat with radiation, and maintain the temperature at 1250°C for 1.5 hours;

[0032] (3) The powder after high temperature smelting in step (2) is mixed wi...

Embodiment 3

[0034] A dust-proof and anti-scaling coating on the surface of microelectronics, which is mainly made of the following raw materials in proportions by weight: 42 parts of quartz sand, 40 parts of petroleum coke, 26 parts of wood chips, 23 parts of sodium chloride, 8 parts of nano-titanium dioxide, 20 parts of trisodium phosphate, 30 parts of sodium sulfonate, 25 parts of ethanol, and 60 parts of water.

[0035] A method for preparing a dust-proof and anti-scaling coating on a microelectronic surface, comprising the following steps:

[0036] (1) Grind quartz sand, petroleum coke and wood chips into powder, and the particle size of the powder is 700 mesh;

[0037] (2) Put the powder obtained in step (1), sodium chloride powder, trisodium phosphate powder, and sodium sulfonate powder into a high-temperature resistance furnace, and heat it by radiation, maintaining the temperature at 1300°C for 2 hours;

[0038] (3) The powder after high temperature smelting in step (2) is mixed ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle size (mesh)aaaaaaaaaa
particle size (mesh)aaaaaaaaaa
particle size (mesh)aaaaaaaaaa
Login to view more

Abstract

The invention discloses a micro-electronic surface dust-proof and scale prevention coating and a preparation method of the micro-electronic surface dust-proof and scale prevention coating. The dust-proof and scale prevention coating is mainly prepared from the following raw materials in parts by weight: 13-42 parts of quartz sand, 15-40 parts of petroleum coke, 10-26 parts of saw dust, 11-23 parts of sodium chloride, 1-8 parts of nano titanium dioxide, 8-20 parts of trisodium phosphate, 13-30 parts of sodium sulfonate, 11-25 parts of ethyl alcohol and 25-60 parts of water. Compared with the prior art, the dust-proof and scale prevention coating has the following technical effects: firstly, the prepared micro-electronic surface dust-proof and scale prevention coating is flexible and good in air permeability; secondly, the prepared micro-electronic surface dust-proof and scale prevention coating can be directly sprayed to the surfaces of the products, is simple and convenient to operate, harmless to the environment, non-toxic, and easy to clean; finally, the prepared micro-electronic surface dust-proof and scale prevention coating is waterproof, and has a dedusting and scale prevention effect.

Description

technical field [0001] The invention relates to the field of chemical coatings, in particular to a dust-proof and anti-scaling coating on the surface of microelectronics and a preparation method thereof. Background technique [0002] Microelectronic components are miniaturized electronic system chips and devices realized by using microelectronic technology, which can greatly improve the performance and reliability of circuits and devices, and greatly reduce the volume and cost. Microelectronic devices mainly include two parts, namely semiconductor integrated circuits and semiconductor devices. Semiconductor integrated circuits mainly include digital integrated circuits, analog integrated circuits and digital-analog mixed (mixed-signal) integrated circuits. Semiconductor devices mainly include microwave power devices and other semiconductor discrete devices. Microelectronics process technology is mainly divided into monolithic integrated circuits, discrete semiconductor dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09D1/00C09D7/12C09D5/16
Inventor 李苏杨李文遐徐勤霞
Owner SUZHOU BEC BIOLOGICAL TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap