Waveguide butt-coupling type separated absorption multiplication avalanche diode

An avalanche diode, butt coupling technology, applied in semiconductor devices, electrical components, circuits, etc., to reduce transit time and dark current, improve sensitivity, and avoid disturbances.

Active Publication Date: 2015-09-02
BEIJING KANGGUAN SHIJI OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the waveguide SAM-APD developed today still has a long way to go t

Method used

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  • Waveguide butt-coupling type separated absorption multiplication avalanche diode
  • Waveguide butt-coupling type separated absorption multiplication avalanche diode
  • Waveguide butt-coupling type separated absorption multiplication avalanche diode

Examples

Experimental program
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Embodiment Construction

[0016] As shown in Figure 3, its preparation process and method are as follows:

[0017] 1. Etching the ridge waveguide 110 on the top layer of 220nm thick Si of a silicon-on-insulator (SOI) substrate with an etching depth of 120nm.

[0018] 2. Define the device area by etching and etch to the insulating buried layer.

[0019] 3. Boron is implanted to form a p-type charge region 104 with a doping concentration of 2×10 17 cm -3 ;

[0020] 4. Deposit a layer of SiO on the surface 2 , a Ge epitaxial window is etched by a combination of dry and wet methods, and the intrinsic Ge layer is epitaxially selected, with a thickness of about 0.5 μm;

[0021] 5. Implant boron in the top layer of Ge region to form p + The ohmic contact layer 102 has a thickness of about 0.1 μm and a doping concentration of 1×10 19 cm -3 , and the remaining part is the Ge absorbing layer 103;

[0022] 6. Phosphorus ion implantation forms n + Ohmic contact region 107, the doping concentration is 1×10...

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PUM

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Abstract

The invention discloses a waveguide butt-coupling type separated absorption multiplication avalanche diode which is capable of detecting weak communication optical signals, and relates to the fields of semiconductor photoelectric devices and optical interconnects. The waveguide butt-coupling type separated absorption multiplication avalanche diode comprises a p+ type ohmic contact electrode (101), p+ type ohmic contact layer (102), an absorption layer (103), a p type charge region (104), a high field multiplication region (105), a n+ type ohmic contact electrode (106), a n+ type ohmic contact region (107), an insulating buried layer (108), a substrate (109) and a ridge waveguide (110). The waveguide butt-coupling type separated absorption multiplication avalanche diode is characterized in that the p type charge region (104) is located at the terminal bottom of the ridge waveguide (110), and the absorption layer (103) is located at the top of the p type charge region (104) and is connected with a terminal inner ridge region of the ridge waveguide (110); and the high field multiplication region (105) and the n+ ohmic contact region (107) are sequentially arranged close to the p type charge region (104), have the same thickness as that of an outer ridge of the ridge waveguide (110), and extend perpendicular to the optical transmission direction of the ridge waveguide (110). As it can be seen from a schematic diagram of an I-V curve corresponding to the diode, excellent multiplication is achieved for the device.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices and the field of optical interconnection, in particular to a waveguide butt-coupling type absorption multiplication separation avalanche diode capable of detecting weak communication optical signals. Background technique [0002] The avalanche photodetector (APD) generates internal gain through the avalanche multiplication effect, has the characteristics of high sensitivity and responsivity, and is one of the important research directions of photodetectors. It is used in weak light detection, quantum communication, biomedicine and optical communication integrated systems There are broad applications in various optical information detection fields. [0003] The waveguide avalanche detector breaks through the mutual constraints between the optical response and the frequency response of the traditional vertical incidence structure detector. The device integration has the advantages...

Claims

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Application Information

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IPC IPC(8): H01L31/107H01L31/0232H01L31/0352
CPCH01L31/02327H01L31/03529H01L31/107
Inventor 李冲郭霞刘巧莉董建刘白马云飞
Owner BEIJING KANGGUAN SHIJI OPTOELECTRONICS TECH
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