Preparation method of high-heat-conduction hexagonal boron nitride/polyimide composite material

A technology of hexagonal boron nitride and polyimide, which is applied in the field of composite material preparation, can solve problems such as poor compatibility, and achieve the effects of improved thermal conductivity, higher operating temperature, and lower equipment requirements

Active Publication Date: 2015-09-09
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the compatibility between hexagonal boron nitride and polyimide matrix is ​​poor, resulting in large interface thermal resistance. Therefore, solving the compatibility problem between hexagonal boron nitride and polyimide matrix is ​​one of the effective ways to improve thermal conductivity.

Method used

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  • Preparation method of high-heat-conduction hexagonal boron nitride/polyimide composite material
  • Preparation method of high-heat-conduction hexagonal boron nitride/polyimide composite material
  • Preparation method of high-heat-conduction hexagonal boron nitride/polyimide composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1. Preparation of surface modified hexagonal boron nitride

[0032] (1) After mixing 2g h-BN with 30ml concentrated nitric acid (65-68% solute mass fraction) and 90ml concentrated sulfuric acid (95-95% solute mass fraction), ultrasonically disperse at room temperature for 2h, then react in a water bath at 70°C After 72h, the product was washed with water to neutrality after the reaction was completed, and the pretreated hexagonal boron nitride product was obtained after drying, which was recorded as BN-1. After drying in an oven, an infrared test was carried out, as shown in figure 1 shown.

[0033](2) Put the activated 4A molecular sieve into N,N-dimethylacetamide for 24h, then distill under reduced pressure, collect fractions at about 75°C to obtain anhydrous N,N-dimethylacetamide.

[0034] (3) Add 1g of BN-1 to a 250ml three-necked flask, add 100ml of N,N-dimethylacetamide solvent treated in step (2) under nitrogen protection, and stir ultrasonically for 2 hours, so...

Embodiment 2

[0041] 1. Preparation of surface modified hexagonal boron nitride

[0042] (1) After mixing 2g h-BN with 30ml concentrated nitric acid (65-68% solute mass fraction) and 90ml concentrated sulfuric acid (95-95% solute mass fraction), ultrasonically disperse at room temperature for 2h, then react in a water bath at 70°C After 72 hours, after the reaction, the product was washed with water until neutral, and dried to obtain a pretreated hexagonal boron nitride product, which was designated as BN-1.

[0043] (2) Put the activated 4A molecular sieve into N,N-dimethylacetamide for 24h, then distill under reduced pressure, collect fractions at about 75°C to obtain anhydrous N,N-dimethylacetamide.

[0044] (3) Add 1g of BN-1 to a 250ml three-necked flask, add 100ml of N,N-dimethylacetamide solvent treated in step (2) under nitrogen protection, and stir ultrasonically for 2 hours, so that the hexagonal boron nitride is evenly dispersed in N,N-dimethylacetamide solvent.

[0045] (4) Un...

Embodiment 3

[0049] 1. Preparation of surface modified hexagonal boron nitride

[0050] (1) After mixing 2g h-BN with 30ml concentrated nitric acid (65-68% solute mass fraction) and 90ml concentrated sulfuric acid (95-95% solute mass fraction), ultrasonically disperse at room temperature for 2h, then react in a water bath at 70°C After 72 hours, after the reaction, the product was washed with water until neutral, and dried to obtain a pretreated hexagonal boron nitride product, which was designated as BN-1.

[0051] (2) Put the activated 4A molecular sieve into N,N-dimethylacetamide for 24h, then distill under reduced pressure, collect fractions at about 75°C to obtain anhydrous N,N-dimethylacetamide.

[0052] (3) Add 1.5g of BN-1 to a 250ml three-necked flask, add 150ml of N,N-dimethylacetamide solvent treated in step (2) under nitrogen protection, and stir ultrasonically for 2h, so that the hexagonal boron nitride is uniformly Dispersed in N,N-dimethylacetamide solvent.

[0053] (4) Un...

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Abstract

The invention relates to a preparation method of a high-heat-conduction hexagonal boron nitride / polyimide composite material. The method comprises the following steps: step 1: mixing h-BN with mixed acid, facilitating reaction in a water bath, washing a product to be neutral, and drying the product; step 2: adding a solvent, ultrasonically dispersing, then adding binary isocyanate, and stirring and refluxing for 24h; step 3: adding aromatic diamine, and continuously stirring and refluxing for 24h; step 4: placing amination hexagonal boron nitride into a reactor, adding the solvent, and then stirring and ultrasonically dispersing; adding aromatic amine, adding aromatic dianhydride equimolar to aromatic amine, preparing a polyamide acid solution, smearing the polyamide acid solution onto a glass plate, carrying out the thermal imidization, and preparing a hexagonal boron nitride / polyimide composite film. By adopting the preparation method, the interaction force of the hexagonal boron nitride and polyimide is improved, a purpose of improving the dispersibility of a filler and compatibility of a base body can be realized, simplicity and feasibility can be realized, and the requirement on equipment is low.

Description

technical field [0001] The invention belongs to the field of composite material preparation, and relates to surface modification of hexagonal boron nitride and a preparation method of polyimide composite material. Background technique [0002] As a member of electronic packaging materials and electrical insulation materials, polyimide (Polyimide, PI) is widely used in microelectronics and aerospace due to its excellent thermal stability, mechanical properties and low dielectric constant. field. However, traditional PI also has some defects that limit its application, such as poor thermal conductivity, and when it is used as an electronic packaging material, it cannot dissipate heat in time, which affects the service life of the device. Therefore, in the case of ensuring the excellent comprehensive performance of PI itself, improving the thermal conductivity of PI has aroused extensive interest in the fields of academic and engineering research. [0003] Thermally conductiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08L79/08C08K9/02C08K3/38C08G73/10
Inventor 于晓燕杨曦马伟佳单书燕
Owner HEBEI UNIV OF TECH
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