Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-voltage chip-type conductive polymer solid electrolyte tantalum capacitor and manufacturing method thereof

A conductive polymer, solid electrolyte technology, applied in solid electrolytic capacitors, capacitor electrodes, capacitor parts and other directions, can solve problems such as inability to meet the use, to meet the needs of high voltage, expand the scope of applications, and good stability.

Active Publication Date: 2017-12-19
BEIJING 718 YOUYI ELECTRONICS
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Based on the problems in the above-mentioned prior art, the present invention provides a high-voltage chip-type conductive polymer solid electrolyte tantalum capacitor and its manufacturing method, which can produce a chip-type conductive polymer solid electrolyte tantalum capacitor with a rated withstand voltage of 50v or 63v , to solve the problem that the rated withstand voltage of the chip-type conductive polymer solid electrolyte tantalum capacitor produced by the existing method can only reach 35V, which cannot meet the problem of being used in some high-voltage circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage chip-type conductive polymer solid electrolyte tantalum capacitor and manufacturing method thereof
  • High-voltage chip-type conductive polymer solid electrolyte tantalum capacitor and manufacturing method thereof
  • High-voltage chip-type conductive polymer solid electrolyte tantalum capacitor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] This embodiment provides a method for manufacturing a high-voltage chip-type conductive polymer solid electrolyte tantalum capacitor. It is a method for manufacturing a high-voltage organic polymer solid chip tantalum electrolytic capacitor. The rated withstand voltage of the capacitor can reach 50v. The structure of the capacitor is as image 3 shown, including:

[0044] A capacitor tantalum core substrate 3, a brass-based tin-plated negative electrode 2 and a brass-based tin-plated positive electrode 8 are arranged in the molded shell 1, and each part is encapsulated by epoxy resin. The inside of the capacitor tantalum core substrate 3 is a tantalum core as an anode, and the anode The surface is a cathode, and a dielectric layer with a thickness of not less than 3500 nanometers ( figure 2 not shown in), the anode is provided with a tantalum wire lead-out wire 6, the surface of the cathode is coated with a graphite layer 32 and a silver paste layer in turn as the cat...

Embodiment 2

[0060] This embodiment provides a method for manufacturing a high-voltage chip-type conductive polymer solid electrolyte tantalum capacitor. It is a method for manufacturing a high-voltage organic polymer solid-state chip tantalum electrolytic capacitor. The rated withstand voltage of the capacitor can reach 63v. Example The specification is 63V 4.7uF, the structure of this capacitor is as image 3 As shown, can refer to the description of a pair of capacitor structures in the embodiment, the difference is that the thickness of the dielectric layer on the anode block is 4400 nanometers, which will not be repeated here, and the steps of the manufacturing method are as follows:

[0061] (1) Use electron-bombed tantalum powder with a specific volume of 8000UuF.v / g and a breakdown voltage of more than 300V as raw material, and press it into a tantalum core block with a tantalum wire lead-out wire according to a pressing density of 7.5 g / CC (ie Anode block), according to the size o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-voltage chip-type conducting polymer solid electrolyte tantalum capacitor and a manufacturing method thereof. The method comprises the following steps: using a chip-type tantalum powder raw material to press a tantalum core blank block with a tantalum wire outgoing line, performing vacuum sintering on the tantalum core blank block, and then performing passivating treatment; putting the blank block after sintering in a forming groove filled with a glycol phosphate electrolyte to chemically form a dielectric layer with the thickness of no less than 3000 nm or 3500 nm; permeating a nanoscale poly-3,4-ethylenedioxythiophene particle solution onto gaps and the dielectric layer inside the blank block after the dielectric layer is formed by adopting a repeated impregnation method to form a cathode through deposition, and coating a graphite layer and a silver paste layer on the cathode to form a cathode outgoing layer; welding the tantalum wire outgoing line of the blank block to a shell metal frame lead, packaging by using epoxy resin, and thus obtaining the high-voltage chip-type conducting polymer solid electrolyte tantalum capacitor. The withstand voltage of the manufactured capacitor reaches 50 V or 63 V, the application range of the chip-type electrolyte tantalum capacitor is widened, and the requirement of circuit reliability is met.

Description

technical field [0001] The invention relates to the field of preparation of tantalum capacitors, in particular to a high-voltage sheet-type conductive polymer solid electrolyte tantalum capacitor and a manufacturing method thereof. Background technique [0002] When the capacity and test or use frequency of tantalum capacitors increase to a certain value, the capacity of the product will decrease with the increase of the frequency. When the frequency increases to the same as the resonant frequency of the product, the capacity of the product will be lost and become an inductance. The root of this inevitable physical phenomenon is that the inductance and impedance of the product will become capacitive reactance with the increase of frequency, resulting in a decrease in the capacity of the product. If the impedance of the product is low, especially at high frequency, the inductive reactance of the product is also low, and the capacity of the product will also be maintained to a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/15H01G9/04H01G9/07
Inventor 王金伟孙涛
Owner BEIJING 718 YOUYI ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products