Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A perovskite-based inverted thin-film solar cell and its preparation method

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of increasing costs and the inability to prepare flexible substrates, and achieve the effects of low cost, wide absorption range, and cost reduction

Active Publication Date: 2018-08-31
SUZHOU UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a high temperature will inevitably increase the cost in industrial production, and there is no way to prepare it on a flexible substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A perovskite-based inverted thin-film solar cell and its preparation method
  • A perovskite-based inverted thin-film solar cell and its preparation method
  • A perovskite-based inverted thin-film solar cell and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] (1) the NH 2 CH=NH 2 I(FAI) and PbI 2 Mix and dissolve in N,N-dimethylformamide (DMF) solvent at a molar ratio of 1:1, stir at room temperature for 12 hours, and filter the solution with a 0.22 um organic filter head;

[0035] (2) Provide a patterned ITO conductive glass substrate. After scrubbing with detergent, use acetone, ethanol, and deionized water to ultrasonically clean each twice for ten minutes each time, and then put it in a drying oven to dry ;

[0036] (3) Ozone treatment was performed on the dried ITO conductive glass substrate, and the ozone treatment time was 15 min;

[0037] (4) Spin-coat a layer of PEDOT:PSS on the surface of the ITO conductive glass substrate at a rotational speed of 4000 rpm / 40 s, and then perform annealing treatment at 140°C / 15 min (the preparation of this layer is carried out in an atmospheric environment );

[0038] (5) Transfer the ITO conductive glass substrate to the glove box and spin-coat FAPbI 3 The perovskite precursor ...

Embodiment 2

[0045] (1) the NH 2 CH=NH 2 I(FAI) and PbI 2 Mix and dissolve in N,N-dimethylformamide (DMF) solvent at a molar ratio of 1:1, stir at room temperature for 12 hours, and filter the solution with a 0.22 um organic filter head;

[0046] (2) Provide a patterned ITO conductive glass substrate. After scrubbing with detergent, use acetone, ethanol, and deionized water to ultrasonically clean each twice for ten minutes each time, and then put it in a drying oven to dry ;

[0047] (3) Ozone treatment was performed on the dried ITO conductive glass substrate, and the ozone time was 15 min;

[0048] (4) Spin-coat a layer of PEDOT:PSS precursor solution on the surface of ITO at a speed of 4000 rpm / 40 s, and then perform annealing treatment at 140°C / 15 min (the preparation of this layer is carried out in an atmospheric environment) ;

[0049] (5) Transfer the ITO conductive glass substrate to the glove box and spin-coat FAPbI 3 The perovskite precursor layer was cleaned with chlorobe...

Embodiment 3

[0053] The difference between this example and Example 1 is that the hole transport layer material is graphene oxide (GO), and other steps are the same as Example 1.

[0054] The device structure of Example 3 is ITO / GO / FAPbI3 / PCBM / BCP / Ag.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of thin-film solar cells, and relates to a perovskite-based inverted thin-film solar cell and a preparation method thereof. The thin-film solar cell is based on an inverted planar structure and uses a FAPbI3 perovskite system as a light-absorbing layer. Prepared under low temperature conditions by solution method. This thin film battery uses a new type of FAPbI3 perovskite system as the light absorbing layer, which has a wider absorption range, higher phase transition temperature and better stability than the traditional MAPbI3 perovskite system; avoid Based on the disadvantages of high-temperature sintering in the traditional inverted structure, the cost can be greatly reduced in industrial production; the thin-film solar cell is not only simple in preparation method, low in cost, but also has good repeatability, and can realize low-cost roll-to-roll mode. It has very potential application value in future industrialized production.

Description

technical field [0001] The invention belongs to the field of thin-film solar cells, and relates to an inverted thin-film solar cell based on a perovskite material and a preparation method thereof. Background technique [0002] As a new type of light-absorbing layer material, perovskite was first used in solar cells in 2009. After six years of development, its energy conversion efficiency has increased from the initial 3.8% to over 20%. However most of the work is based on CH 3 NH 3 PB 3 (or CH 3 NH 3 PB 3-x Cl x ) system, the band gap of this perovskite material is about 1.55 eV, which has not yet reached the ideal band gap (1.4 eV) of photovoltaic materials. Moreover, it was reported that CH 3 NH 3 PB 3 (MAPbI 3 ) system of perovskite has a very low phase transition temperature, which is bound to affect the stability of the device. [0003] NH 2 CH=NH 2 PB 3 (FAPbI 3 ), as a new type of perovskite material, has been used as an active layer in perovskite so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/00
CPCH10K71/12H10K85/00H10K30/30Y02E10/549
Inventor 廖良生袁大星王照奎
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com