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A method of manufacturing a semiconductor device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems that restrict the improvement of the yield rate and performance of semiconductor devices, so as to improve the stability of negative bias voltage temperature and improve Performance and yield, effect of guaranteed shape

Active Publication Date: 2018-05-08
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing manufacturing methods of semiconductor devices, the contradictions and conflicts between ensuring NBTI and protecting the top flanks of dummy gates directly restrict the improvement of yield rate and performance of semiconductor devices

Method used

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  • A method of manufacturing a semiconductor device
  • A method of manufacturing a semiconductor device
  • A method of manufacturing a semiconductor device

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Embodiment Construction

[0030] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0031] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0032] It will be understood that when an element or layer is referred t...

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Abstract

The invention provides a method for manufacturing a semiconductor device and relates to the technical field of semiconductors. In the manufacturing method of the semiconductor device of the present invention, by adjusting the process temperature in the process of forming the germanium-silicon masking layer so that the inner part of the sidewall of the formed masking layer is low-temperature silicon nitride and the outer part is high-temperature silicon nitride, not only can the interface be avoided The re-growth of the layer and the crystallization of the high-k dielectric layer can improve the negative bias temperature instability (NBTI), and can provide protection for the dummy gate to avoid the formation of metal silicide on the top flank of the dummy gate, thereby ensuring The morphology of the metal gate can therefore improve the performance and yield of semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] In the field of semiconductor technology, for processes below 0.13um, negative bias temperature instability (NBTI: Negative Bias Temperature Instability) is an important reliability factor for PMOS. In high-k metal gate technology, negative bias temperature instability (NBTI) becomes more and more serious due to negative effects such as crystallization of high-k materials, interfacial layer re-growth, out-diffusion of boron in SiGe layer, etc. more serious. [0003] In the existing manufacturing methods of semiconductor devices, high-temperature silicon nitride (silicon nitride formed under high-temperature process) or carbon-doped silicon nitride (silicon nitride doped with carbon) or low-temperature silicon nitride (silicon nitride) is usually used Silicon nitride formed in a low temperatu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/28
Inventor 韦庆松于书坤
Owner SEMICON MFG INT (SHANGHAI) CORP
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