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Methods for manufacturing block copolymers and articles manufactured therefrom

A technology of block copolymers and articles, applied in the field of block copolymers, which can solve the problem that the polarity conversion top coating cannot withstand high annealing temperature

Active Publication Date: 2016-01-27
DOW GLOBAL TECH LLC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to incorporate and reproducibly control the external alignment field or physical placement (of the top layer) to hold the tracks in industrial-scale manufacturing, while the polarity-switching top coating cannot withstand high annealing temperatures (greater than 200°C) to meet High throughput requirements in the semiconductor industry (within minutes of thermal annealing)

Method used

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  • Methods for manufacturing block copolymers and articles manufactured therefrom
  • Methods for manufacturing block copolymers and articles manufactured therefrom
  • Methods for manufacturing block copolymers and articles manufactured therefrom

Examples

Experimental program
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example

[0104] PS with number average molecular weights indicated by 13.5-b-13.5 kg / mol and 6.1-b-8.7 kg / mol are generally synthesized by the procedure described by Chang et al. in US Patent Publication 20130209344 and outlined below -b-PDMS block copolymer, wherein the first number corresponds to the number average molecular weight of the PS blocks and the second number corresponds to the number average molecular weight of the PDMS blocks. All other PS-b-PDMS block copolymers and PS and PDMS homopolymers were purchased from Polymer Source.

[0105] Synthesis of PS-b-PDMS Block Copolymer

[0106] Cyclohexane and styrene were added to a 500 mL round bottom reactor under argon atmosphere. The contents of the reactor were then warmed to 40°C. An injection of a 0.06M solution of sec-butyllithium in cyclohexane was then rapidly added to the reactor via cannula, turning the reactor contents yellow-orange. The reactor contents were stirred for 30 minutes. A small portion of the reactor c...

example 2

[0116] This example demonstrates the use of a composition (PS-b-PDMS-22) prepared according to Table 2 comprising a PS-b-PDMS composition with a domain spacing of 22 nm.

[0117] Table 2

[0118] polymer name

Composition / Mn(kg / mol)

wt% in composition

PDI

PS-b-PDMS

6.1-b-8.7

45

1.02

PS-b-PDMS

5.2-b-1.4

28

1.14

P.S.

6.0

8

1.05

PDMS

2.2

10

1.09

PDMS

3.5

9

1.12

[0119] By spin-coating a solution of hydroxyl-terminated poly(methylmethacrylate-ran-trifluoroethylmethacrylate) in propylene glycol monomethyl ether acetate (PGMEA), followed by a soft bake at 150 °C for 1 min And the silicon substrate with native oxide was treated by thermal annealing at 250° C. for 5 minutes under nitrogen. The substrate was then swirled with PGMEA for 1 minute and spin dried at 3000 rpm for 1 minute. PS-b-PDMS-22 was dissolved in 1,3-dioxolane to form a 0.6 wt% solution. The so...

example 3

[0121] Example 3: Chemical epitaxy of PS-b-PDMS with 32nm pitch

[0122] This example depicts the fabrication and use of a polystyrene-block-polydimethylsiloxane copolymer (PS-b-PDMS) composition prepared according to Table 1 with a domain spacing of 32 nm (PS-b-PDMS- 32).

[0123] A 1.2 wt% (solids) solution of hydroxyl-terminated poly(methyl methacrylate-random-trifluoroethyl methacrylate) in propylene glycol methyl ether acetate (PGMEA) Chemically patterned substrates were prepared by spin coating on chemical epitaxy templates (90 nm pitch, 15 nm critical dimension (CD)) with isolated polystyrene strips using Liu (Liu et al. (Macromolecules), 2011, 44(7), prepared by the method described in pages 1876-1885. The templated substrates were baked at 150°C for 1 minute and annealed at 250°C for 5 minutes under nitrogen.

[0124]The substrate was then immersed in PGMEA for 1 minute, spin dried at 3,000 rpm for 1 minute, and baked at 150° C. for 1 minute. PS-b-PDMS-32 was diss...

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Abstract

Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block, where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block, where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer, by total solid weighting, the weight percentage of the first block of the second block copolymer is larger than the weight percentage of the first block of the first block copolymer, where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200 DEG C, the first block copolymer is phase separated into the first form of the cylindrical shaped or flake shaped structure when the first block copolymer is disposed on the substrate independently; the second block copolymer is phase separated into the second form of the cylindrical shaped, flake shaped or spherical structure; and the first form is different from the second form; and a first polymer, where, the first polymer is chemically the same as or similar to the first block of the first block copolymer and the first block of the second block copolymer.

Description

Background technique [0001] The present invention relates to block copolymers, methods for their manufacture and articles comprising said block copolymers. Specifically, the present invention relates to block copolymers for improved nanolithography patterning. [0002] Modern electronic devices are moving towards utilizing structures with periodicities less than 40 nanometers (nm). The ability to shrink the size and pitch of various features on a given substrate (eg, a gate in a field effect transistor) is currently limited by the wavelength of light (ie, 193 nm) used to expose the photoresist. These limitations create significant challenges for fabricating features with a critical dimension (CD) below 40 nm. [0003] Block copolymers have been proposed as a solution to form patterns with a periodicity less than 40 nm. Block copolymers form self-assembled nanostructures in order to reduce the system free energy. Nanostructures are those structures that have an average maxi...

Claims

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Application Information

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IPC IPC(8): G03F7/004G03F7/00
CPCC08G77/442C08L83/10C08F293/00C08F299/08C08J5/00G03F7/004C09D183/10B05D3/007C08F220/14C08L2205/025C08L2205/035
Inventor J·J·张P·D·赫士德P·特雷福纳斯三世M·李V·V·金兹伯格J·D·魏因霍尔德
Owner DOW GLOBAL TECH LLC